VTP Process Photodiodes VTP1188S PACKAGE DIMENSIONS inch (mm) CASE 12 LENSED CERAMIC CHIP ACTIVE AREA: .017 in2 (1.1 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Large area planar silicon photodiode mounted on a two lead ceramic substrate. A clear molded lens is used to increase sensitivity. Low junction capacitance permits fast response time. Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46) VTP11188S SYMBOL CHARACTERISTIC TEST CONDITIONS UNITS Min. ISC Typ. Max. Short Circuit Current H = 100 fc, 2850 K 200 µA ISC Temperature Coefficient 2850 K .20 %/°C ISC Short Circuit Current 100 µW/cm2, 880 nm VOC Open Circuit Voltage H = 100 fc, 2850 K .33 mV VOC Temperature Coefficient 2850 K -2.0 mV/°C Dark Current H = 0, VR = 10 mV Shunt Resistance H = 0, V = 10 mV 67 GΩ RSH Temperature Coefficient H = 0, V = 10 mV -11 %/°C Junction Capacitance H = 0, V =0 V TC ISC TC VOC ID RSH TC RSH CJ λrange Spectral Application Range λp Spectral Response - Peak SR Sensitivity 13 25 3 .18 400 @ Peak PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA 30 µA nA .30 nF 1100 nm 925 nm .55 A/W Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 51