Advanced Technical Information VWI 15-12P1 IC25 IGBT Module VCES VCE(sat) typ. Sixpack in ECO-PAC 2 = 18 A = 1200 V = 2.3 V S9 L9 N5 N9 R5 X 18 W 14 A5 D5 H5 A1 F3 C1 K 10 G1 Features IGBTs Conditions Maximum Ratings VCES TVJ = 25°C to 150°C VGES 1200 V ± 20 V IC25 IC80 TC = 25°C TC = 80°C 18 14 A A ICM VCEK VGE = ±15 V; RG = 82 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH 20 A tSC (SCSOA) VCE = 720 V; VGE = ±15 V; RG = 82 Ω; TVJ = 125°C non-repetitive 10 µs Ptot TC = 25°C 90 W Symbol Conditions VCE(sat) IC = 10 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.4 mA; VGE = VCE ICES VCE = VCES; IGES td(on) tr td(off) tf Eon Eoff VCES • FRED diodes - fast reverse recovery - low forward voltage • Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate Typical Applications Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.3 2.7 4.5 VGE = 0 V; TVJ = 25°C TVJ = 125°C • NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching 2.7 V V 6.5 V 0.5 mA mA 200 nA 0.8 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 10 A VGE = ±15 V; RG = 82 Ω 50 40 290 60 1.2 1.1 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 10 A 600 45 pF nC RthJC RthJH (per IGBT) (per IGBT) with heatsink compound 2.7 1.4 K/W K/W • AC drives • power supplies with power factor correction 210 Symbol IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 1-2 www.ixys.net IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670 Advanced Technical Information VWI 15-12P1 Dimensions in mm (1 mm = 0.0394") Diodes Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 15 10 Symbol Conditions Characteristic Values min. typ. max. VF IF = 10 A; TVJ = 25°C TVJ = 125°C IRM t rr IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V RthJC RthJH (per diode) (per diode) with heatsink compound 2.6 1.9 A A 3.0 V V 13 110 A ns 5.0 3.5 K/W K/W Component Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+125 °C °C 3600 V~ 1.5 - 2.0 14 - 18 50 Nm lb.in. m/s2 VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s Md mounting torque (M4) a Max. allowable acceleration Symbol Conditions Characteristic Values min. typ. max. dS dA Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) 11.2 11.2 Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2002 IXYS All rights reserved mm mm 24 g 210 Symbol 2-2