Ultra-Low VCE(sat) IGBT IXGH 41N60 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 76 A IC90 TC = 90°C ICM TC = 25°C, 1 ms SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 W Clamped inductive load, L = 100 mH PC TC = 25°C 41 A 152 A ICM = 76 @ 0.8 VCES A 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque (M3) 1.13/10 Nm/lb.in. Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 6 g 300 °C VCES = 600 V IC25 = 76 A VCE(sat) = 1.6 V TO-247 AD G G = Gate, E = Emitter, C E C = Collector, TAB = Collector Features • International standard package JEDEC TO-247 AD • Newest generation HDMOSTM process • Low VCE(sat) - for minimum on-state conduction losses • High current handling capability • MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. BVCES IC = 250 mA, VGE = 0 V 600 VGE(th) IC = 250 mA, VCE = VGE 2.5 ICES VCE = 0.8 • VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC TJ = 25°C TJ = 125°C = IC90, VGE = 15 V IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 5 V 200 1 mA mA ±100 nA 1.6 V • • • • • • AC motor speed control DC servo and robot drives DC choppers Solid state relays Lighting controls Temperature regulators Advantages • Easy to mount with 1 screw (isolated mounting screw hole) • Low losses, high efficiency • High power density 97546(1/98) 1-2 IXGH 41N60 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 % C ies 28 S 2750 pF 206 pF C res 55 pF Qg 120 nC 25 nC 40 nC Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz 19 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc TO-247 AD (IXGH) Outline td(on) Inductive load, TJ = 25°C 30 ns t ri IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 10 W 30 ns 600 ns A B 19.81 20.32 20.80 21.46 0.780 0.800 0.819 0.845 450 ns 8 mJ C D 15.75 16.26 3.55 3.65 0.610 0.640 0.140 0.144 40 ns E F 4.32 5.49 5.4 6.2 0.170 0.216 0.212 0.244 40 ns G H 1.65 2.13 4.5 0.065 0.084 0.177 0.3 mJ 800 ns J K 1.0 1.4 10.8 11.0 0.040 0.055 0.426 0.433 600 ns L M 4.7 0.4 5.3 0.8 0.185 0.209 0.016 0.031 15 mJ N 1.5 2.49 0.087 0.102 td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 10 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG RthJC RthCK © 2000 IXYS All rights reserved Dim. Millimeter Min. Max. Inches Min. Max. 0.62 K/W 0.25 K/W IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2