WTM1766 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5.0 V Collector Current -Continuous IC 2.0 A Collector Power dissipation PC 500 mW Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=50μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=50μA, IC=0 5 V Collector cut-off current ICBO VCB=20V, IE=0 1 μA Emitter cut-off current IEBO VEB=4V, IC=0 1 μA DC current gain hFE(1) VCE=3V, IC=500mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range Marking WEITRON http://www.weitron.com.tw 82 390 IC=2A, IB=0.2A 0.8 V VCE=5V, IC=50mA, f=100MHz 100 MHz VCB=10V, IE=0, f=1MHz 30 pF hFE(1) P Q R 82-180 120-270 180-390 DBP DBQ DBR 1/3 04-Dec-08 WTM1766 Typical Characteristics WEITRON http://www.weitron.com.tw 2/3 04-Dec-08 WTM1766 SOT-89 Outline Dimensions Dim E G H B K A B C D E G H J K L A C J unit:mm D L WEITRON http://www.weitron.com.tw 3/3 SOT-89 Min Max 1.600 1.400 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 3.100 2.900 04-Dec-08