WEITRON KSA708 PNP Plastic-Encapsulate Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE FEATURES : • Low Saturation Medium Current Application TO-92 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Value Units VCBO VCEO VEBO IC PC R θJA TJ Tstg -80 -60 -8 -0.7 0.8 156 150 -55 to +150 V Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature V V A W °C/W °C °C ELECTRICAL CHARACTERISTICS (Tamb=25°C unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO IC= -0.1mA, I E =0 Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage Test conditions MIN TYP MAX Units V IC= -10mA, I B=0 -80 -60 V(BR)EBO IE= -0.1mA, I C=0 -8 V Collector cut-off current I CBO VCB= -60V, I E=0 Emitter cut-off current IEBO VEB= -5V, I C=0 DC current gain hFE VCE= -2V, I C = -50mA Collector-emitter saturation voltage V CE(sat) IC=-0.5A,I B = -50mA -0.7 V Base-emitter saturation voltage V BE(sat) IC=-0.5A, I B=-50mA -1.1 V Transition Frequency fT VCE=-10V,I C=-50mA 50 MHz Collector output capacitance Cob VCB=-10V, I E =0, f=1MHz 13 pF V -0.1 -0.1 µA µA 240 40 CLASSIFICATION OF h FE Rank R O Y Range 40-80 70-140 120-240 WEITRON hpp://www.weitron.com.tw 1/2 23-Feb-2011 KSA708 TO-92 Outline Dimensions unit:mm E H TO-92 Dim A B C D E G H J K L L C J K D A B G M in Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 WEITRON http://www.weitron.com.tw 2/2 23-Feb-2011