2SA1832 PNP TRANSISTOR 3 P b Lead(Pb)-Free 1 FEATURES: * High voltage and high current * Excellent hFE linearity * Complementary to 2SC4738 2 SOT-523(SC-75) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current Continuous IC -150 mA Total Device Dissipation PD 100 mW RθJA 125 ℃/W Junction Temperature TJ -55 to +125 ℃ Storage Temperature Tstg -55 to +125 ℃ Thermal Resistance Junction to Ambient ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage VCBO IC=-100μA,IE=0 -50 V Collector-emitter breakdown voltage VCEO* IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage VEBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -100 nA Emitter cut-off current IEBO VEB =-5V, IC=0 -100 nA DC current gain hFE VCE=-6V,IC=-2mA Collector-emitter saturation voltage Collector output capacitance Rank Range Marking WEITRON http://www.weitron.com.tw VCB=-10V,IE=0,f =1MHz Cob 400 IC=-100mA,IB=-10mA VCE=-10V,IC=-1mA fT Transition frequency CLASSIFICATION OF VCE(sat) 120 -0.3 80 V MHz 4 7 pF hFE Y GR 120-240 200-400 SY SG 1/3 30-Jan-08 2SA1832 Typical Characteristics WEITRON http://www.weitron.com.tw 2/3 30-Jan-08 2SA1832 SOT-523 Outline Dimensions (SC-75) A Dim A B C D E G H J K L M B TOP VIEW D E G H J WEITRON http://www.weitron.com.tw L Unit:mm M 3/3 SOT-523 Min 0.30 0.70 1.45 0.15 0.80 1.40 0.00 0.70 0.37 0.10 Max 0.50 0.90 1.75 0.50 0.40 1.00 1.80 0.10 1.00 0.48 0.25 30-Jan-08