UNISONIC TECHNOLOGIES CO., LTD X1049A NPN SILICON TRANSISTOR HIGH GAIN TRANSISTOR FEATURES * VCEV = 80V * High Gain * 20 Amps pulse current 1 TO-92 ORDERING INFORMATION Ordering Number Lead Free Halogen Free X1049AL-T92-B X1049AG-T92-B X1049AL-T92-K X1049AG-T92-K X1049AL-T92-R X1049AG-T92-R www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd Package TO-92 TO-92 TO-92 Pin Assignment 1 2 3 E B C E B C E B C Packing Tape Box Bulk Tape Reel 1 of 4 QW-R201-061.C X1049A NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage RATINGS UNIT 80 V 25 V 5 V DC 4 A Collector Current IC Pulse 20 A Base Current IB 500 mA Power Dissipation PD 1 W ℃ Junction Temperature TJ 125 ℃ Operating Temperature TOPR -20 ~ +85 ℃ Storage Temperature TSTG -40 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCBO VCEO VEBO ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current SYMBOL VCBO VCEO VCES VCEV VEBO ICBO IEBO ICES TEST CONDITIONS IC=100μA IC=10mA IC=100μA IC=100μA, VEB=1V IE=100μA VCB=50V VEB=4V VCES=50V IC=0.5A, IB=10mA IC=1A, IB=10mA Collector-Emitter Saturation Voltage VCE(SAT) (Note) IC=2A, IB=10mA IC=4A, IB=50mA Base-Emitter Saturation Voltage (Note) VBE(SAT) IC=4A, IB=50mA Base-Emitter Turn-On Voltage (Note) VBE(ON) IC=4A, VCE=2V IC=10mA, VCE=2V IC=0.5A, VCE=2V DC Current Gain (Note) hFE IC=1A, VCE=2V IC=4A, VCE=2V IC=20A, VCE=2V Transition Frequency fT IC=50mA, VCE=10V, f=50MHz Output Capacitance COBO VCB=10V, f=1MHz Turn-On Time tON IC=4A, IB=40mA, VCC=10V Turn-Off Time tOFF IC=4A, IB=±40mA, VCC=10V Note: Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 80 25 80 80 5 250 300 300 200 7 TYP 120 35 120 120 8.75 0.3 0.3 0.3 30 60 125 155 890 820 430 450 450 350 180 45 125 380 MAX 10 10 10 70 130 280 400 980 920 UNIT V V V V V nA nA nA mV mV mV 1200 60 MHz pF ns ns 2 of 4 QW-R201-061.C X1049A NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R201-061.C X1049A NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Power Dissipation vs. Ambient Temperature Transient Thermal Resistance 180 160 D=1(D,C) 140 1.0 0.75 120 100 D=0.5 0.50 80 60 40 D=0.2 0.25 D=0.1 D=0.05 20 Single Pulse 0 0.1ms 1ms 10ms 100ms 1s 10s 100s Pulse Width 0.00 -40 0 40 80 120 160 Ambient Temperature ( ℃ ) 200 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-061.C