X25648/49, X25328/29, X25168/69 64K 32K 16K 8K x 8 Bit 4K x 8 Bit 2K x 8 Bit VCC Supervisory Circuit w/Serial E2PROM FEATURES DESCRIPTION • Low Vcc Detection and Reset Assertion —Reset Signal Valid to Vcc=1V • Save Critical Data With Block LockTM Protection —Block LockTM Protect 0, 1/4, 1/2 or all of Serial E2PROM Memory Array • In Circuit Programmable ROM Mode • Long Battery Life With Low Power Consumption —<1µA Max Standby Current —<5mA Max Active Current during Write —<400µA Max Active Current during Read • 1.8V to 3.6V, 2.7V to 5.5V and 4.5V to 5.5V Power Supply Operation • 2MHz Clock Rate • Minimize Programming Time —32 Byte Page Write Mode —Self-Timed Write Cycle —5ms Write Cycle Time (Typical) • SPI Modes (0,0 & 1,1) • Built-in Inadvertent Write Protection —Power-Up/Power-Down Protection Circuitry —Write Enable Latch —Write Protect Pin • High Reliability • Available Packages —14-Lead SOIC (X2564X) —14-Lead TSSOP (X2532X, X2516X) —8-Lead SOIC (X2532X, X2516X) These devices combines two popular functions, Supply Voltage Supervision and Serial E2PROM Memory in one package. This combination lowers system cost, reduces board space requirements, and increases reliability. The user’s system is protected from low voltage conditions by the devices low Vcc detection circuitry. When Vcc falls below the minimum Vcc trip point, the system is reset. RESET/RESET is asserted until Vcc returns to proper operating levels and stabilizes. The memory portion of the device is a CMOS Serial E2PROM array with Xicor’s Block LockTM Protection. The array is internally organized as x 8. The device features a Serial Peripheral Interface (SPI) and software protocol allowing operation on a simple four-wire bus. The device utilizes Xicor’s proprietary Direct WriteTM cell, providing a minimum endurance of 100,000 cycles per sector and a minimum data retention of 100 years. BLOCK DIAGRAM SI SO SCK CS DATA REGISTER COMMAND DECODE & CONTROL LOGIC RESET/RESET RESET CONTROL VCC LOW VOLTAGE SENSE WP PAGE DECODE LOGIC X - DECODE LOGIC STATUS REGISTER 1 8 SERIAL E2PROM ARRAY HIGH VOLTAGE CONTROL PROGRAMMING, BLOCK LOCK & ICP ROM CONTROL Xicor, Inc. 1994, 1995, 1996 Patents Pending 7032 -1.1 6/17/97 T1/C0/D0 SH 32 7036 FRM 01 Characteristics subject to change without notice X25648/49, X25328/29, X25168/69 PIN CONFIGURATION PIN DESCRIPTIONS Serial Output (SO) SO is a push/pull serial data output pin. During a read cycle, data is shifted out on this pin. Data is clocked out by the falling edge of the serial clock. 14-LEAD SOIC Serial Input (SI) SI is a serial data input pin. All opcodes, byte addresses, and data to be written to the memory are input on this pin. Data is latched by the rising edge of the serial clock. NC 1 14 NC CS 2 13 V CC CS 3 12 V CC SO 4 11 RESET/RESET WP 5 10 SCK VSS NC 6 9 SI 7 8 NC Serial Clock (SCK) The Serial Clock controls the serial bus timing for data input and output. Opcodes, addresses, or data present on the SI pin are latched on the rising edge of the clock input, while data on the SO pin change after the falling edge of the clock input. X25648/49 8-LEAD SOIC CS SO WP Chip Select (CS) When CS is HIGH, the device is deselected and the SO output pin is at high impedance and unless a nonvolatile write cycle is underway, the device will be in the standby power mode. CS LOW enables the device, placing it in the active power mode. It should be noted that after power-up, a HIGH to LOW transition on CS is required prior to the start of any operation. VSS 1 V CC 8 2 X25328/29 7 X25168/69 3 6 RESET/RESET 4 SI 5 SCK 14-LEAD TSSOP Write Protect (WP) When WP is low and the nonvolatile bit WPEN is “1”, nonvolatile writes to the device Status Register are disabled, but the part otherwise functions normally. When WP is held high, all functions, including nonvolatile writes to the Status Register operate normally. If an internal Status Register Write Cycle has already been initiated, WP going low while WPEN is a “1” will have no effect on this write. Subsequent write attempts to the Status Register under these conditions will be disabled. V CC RESET/RESET CS 1 14 SO 2 13 NC 3 X25328/29 12 4 X25168/69 11 NC NC NC 5 10 NC WP VSS 6 9 SCK 7 8 SI NC 7036 FRM 02 PIN NAMES The WP pin function is blocked when the WPEN bit in the Status Register is “0”. This allows the user to install the device in a system with WP pin grounded and still be able to program the Status Register. The WP pin functions will be enabled when the WPEN bit is set to a “1”. Symbol Reset (RESET/RESET) RESET/RESET is an active LOW/HIGH, open drain output which goes active whenever Vcc falls below the minimum Vcc sense level. It will remain active until Vcc rises above the minimum Vcc sense level for 200ms. SCK Serial Clock Input WP Program Protect Input VSS Ground VCC Supply Voltage Description CS Chip Select Input SO Serial Output SI Serial Input RESET/RESET Reset Output 7036 FRM T01 2 X25648/49, X25328/29, X25168/69 The Write-In-Progress (WIP) bit is a volatile, read only bit and indicates whether the device is busy with an internal nonvolatile write operation. The WIP bit is read using the RDSR instruction. When set to a “1”, a nonvolatile write operation is in progress. When set to a “0”, no write is in progress. PRINCIPLES OF OPERATION The device is designed to interface directly with the synchronous Serial Peripheral Interface (SPI) of many popular microcontroller families. The device monitors VCC and asserts RESET/RESET output if the supply voltage falls below a preset minimum Vtrip. The device contains an 8-bit instruction register. It is accessed via the SI input, with data being clocked in on the rising edge of SCK. CS must be LOW during the entire operation. The Write Enable Latch (WEL) bit indicates the Status of the Write Enable Latch. When WEL=1, the latch is set HIGH and when WEL=0 the latch is reset LOW. The WEL bit is a volatile, read only bit. It can be set by the WREN instruction and can be reset by the WRDS instruction. All instructions (Table 1), addresses and data are transferred MSB first. Data input on the SI line is latched on the first rising edge of SCK after CS goes LOW. Data is output on the SO line by the falling edge of SCK. SCK is static, allowing the user to stop the clock and then start it again to resume operations where left off. The Block Lock bits, BL0 and BL1, set the level of Block LockTM Protection. These nonvolatile bits are programmed using the WRSR instruction and allow the user to protect one quarter, one half, all or none of the E2PROM array. Any portion of the array that is Block Lock Protected can be read but not written. It will remain protected until the BL bits are altered to disable Block Lock Protection of that portion of memory. Write Enable Latch The device contains a Write Enable Latch. This latch must be SET before a Write Operation is initiated. The WREN instruction will set the latch and the WRDI instruction will reset the latch (Figure 3). This latch is automatically reset upon a power-up condition and after the completion of a valid Write Cycle. Status Register Bits BL1 BL0 Status Register The RDSR instruction provides access to the Status Register. The Status Register may be read at any time, even during a Write Cycle. The Status Register is formatted as follows: 7 6 WPEN FLB 5 4 3 2 1 1 1 BL1 BL0 WEL Array Addresses Protected X2564X X2532X X2516X None None None 0 0 0 1 $1800–$1FFF $0C00–$0FFF $0600–$07FF 1 0 $1000–$1FFF $0800–$0FFF $0400–$07FF 1 1 $0000–$1FFF $0000–$0FFF $0000–$07FF 7036 FRM T03 Bits 4 and 5 of the Status Register will be read as “1’s” and must be written as “1’s” on all Status Register writes. 0 WIP 7036 FRM T02 Table 1. Instruction Set Instruction Name Instruction Format* Operation WREN 0000 0110 Set the Write Enable Latch (Enable Write Operations) SFLB 0000 0000 Set Flag Bit WRDI/RFLB 0000 0100 Reset the Write Enable Latch/Reset Flag Bit RSDR 0000 0101 Read Status Register WRSR 0000 0001 Write Status Register (BlockLock,WPEN & Flag Bits) READ 0000 0011 Read Data from Memory Array Beginning at Selected Address WRITE 0000 0010 Write Data to Memory Array Beginning at Selected Address *Instructions are shown MSB in leftmost position. Instructions are transferred MSB first. 3 7036 FRM T04 X25648/49, X25328/29, X25168/69 To read the Status Register, the CS line is first pulled low to select the device followed by the 8-bit RDSR instruction. After the RDSR opcode is sent, the contents of the Status Register are shifted out on the SO line. Refer to the Read Status Register Sequence (Figure 2). The read only FLAG bit shows the status of a volatile latch that can be set and reset by the system using the SFLB and RFLB instructions. The Flag bit is automatically reset upon power up. The nonvolatile WPEN bit is programmed using the WRSR instruction. This bit works in conjunction with the WP pin to provide Programmable Hardware Write Protection (Table 2). When WP is LOW and the WPEN bit is programmed HIGH, all Status Register Write Operations are disabled. Write Sequence Prior to any attempt to write data into the device, the “Write Enable” Latch (WEL) must first be set by issuing the WREN instruction (Figure 3). CS is first taken LOW, then the WREN instruction is clocked into the device. After all eight bits of the instruction are transmitted, CS must then be taken HIGH. If the user continues the Write Operation without taking CS HIGH after issuing the WREN instruction, the Write Operation will be ignored. In Circuit Programmable ROM Mode This mechanism protects the Block Lock and Watchdog bits from inadvertant corruption. It may be used to perform an In Circuit Programmable ROM function by hardwiring the WP pin to ground, writing and Block Locking the desired portion of the array to be ROM, and then programming the WPEN bit HIGH. To write data to the E2PROM memory array, the user then issues the WRITE instruction followed by the 16 bit address and then the data to be written. Any unused bits are specified to be “0’s”. The WRITE operation minimally takes 32 clocks. CS must go low and remain low for the duration of the operation. If the address counter reaches the end of a page and the clock continues, the counter will roll back to the first address of the page and overwrite any data that may have been previously written. Read Sequence When reading from the E2PROM memory array, CS is first pulled low to select the device. The 8-bit READ instruction is transmitted to the device, followed by the 16bit address. After the READ opcode and address are sent, the data stored in the memory at the selected address is shifted out on the SO line. The data stored in memory at the next address can be read sequentially by continuing to provide clock pulses. The address is automatically incremented to the next higher address after each byte of data is shifted out. When the highest address is reached, the address counter rolls over to address $0000 allowing the read cycle to be continued indefinitely. The read operation is terminated by taking CS high. Refer to the Read E2PROM Array Sequence (Figure 1). For the Page Write Operation (byte or page write) to be completed, CS can only be brought HIGH after bit 0 of the last data byte to be written is clocked in. If it is brought HIGH at any other time, the write operation will not be completed (Figure 4). To write to the Status Register, the WRSR instruction is followed by the data to be written (Figure 5). Data bits 0 and 1 must be “0”. Data bits 4 and 5 must be “1”. Table 2. STATUS REGISTER STATUS REGISTER DEVICE PIN BLOCK BLOCK STATUS REGISTER WEL WPEN WP# PROTECTED BLOCK UNPROTECTED BLOCK WPEN, BL0, BL1 BITS 0 X X Protected Protected Protected 1 1 0 Protected Writable Protected 1 0 X Protected Writable Writable 1 X 1 Protected Writable Writable 7036 FRM T06 4 X25648/49, X25328/29, X25168/69 Operational Notes The device powers-up in the following state: While the write is in progress following a Status Register or E2PROM Sequence, the Status Register may be read to check the WIP bit. During this time the WIP bit will be high. • The device is in the low power standby state. • A HIGH to LOW transition on CS is required to enter an active state and receive an instruction. • SO pin is high impedance. • The Write Enable Latch is reset. • The Flag Bit is reset. • Reset Signal is active for tPURST. RESET/RESET Operation The RESET (X25XX3) output is designed to go LOW whenever VCC has dropped below the minimum trip point, Vtrip. The RESET (X25XX5) output is designed to go HIGH whenever VCC has dropped below the minimum trip point, Vtrip. Data Protection The following circuitry has been included to prevent inadvertent writes: The RESET/RESET output is an open drain output and requires a pull up resistor. • A WREN instruction must be issued to set the Write Enable Latch. • CS must come HIGH at the proper clock count in order to start a nonvolatile write cycle. Figure 1. Read E2PROM Array Sequence CS 0 1 2 3 4 5 6 7 8 9 10 20 21 22 23 24 25 26 27 28 29 30 SCK INSTRUCTION 16 BIT ADDRESS 15 14 13 SI 3 2 1 0 DATA OUT HIGH IMPEDANCE 7 SO MSB 5 6 5 4 3 2 1 0 7036 FRM 03 X25648/49, X25328/29, X25168/69 Figure 2. Read Status Register Sequence CS 0 1 2 3 4 5 6 7 8 9 10 7 6 5 11 12 13 14 SCK INSTRUCTION SI DATA OUT SO HIGH IMPEDANCE MSB 4 3 2 1 0 7036 FRM 04 Figure 3. Write Enable Latch Sequence CS 0 1 2 3 4 5 6 7 SCK SI SO HIGH IMPEDANCE 7036 FRM 05 6 X25648/49, X25328/29, X25168/69 Figure 4. Write Sequence CS 0 1 2 3 4 5 6 7 8 9 15 14 20 10 21 22 23 24 25 26 1 0 7 6 5 27 28 29 30 31 1 0 SCK INSTRUCTION 16 BIT ADDRESS SI 13 3 DATA BYTE 1 2 4 3 2 CS 32 33 34 7 6 5 35 36 37 38 39 40 41 42 1 0 7 6 5 43 44 45 46 47 1 0 SCK DATA BYTE 2 SI 4 3 DAT A BYTE 3 2 4 3 2 DATA BYTE N 6 5 4 3 2 1 0 7036 FRM 06 Figure 5. Status Register Write Sequence CS 0 1 2 3 4 5 6 7 8 9 10 7 6 5 11 12 13 14 15 1 0 SCK DATA BYTE INSTRUCTION SI SO 4 3 2 HIGH IMPEDANCE 7036 FRM 07 Symbol Table WAVEFORM 7 INPUTS OUTPUTS Must be steady Will be steady May change from LOW to HIGH Will change from LOW to HIGH May change from HIGH to LOW Will change from HIGH to LOW Don’t Care: Changes Allowed N/A Changing: State Not Known Center Line is High Impedance X25648/49, X25328/29, X25168/69 ABSOLUTE MAXIMUM RATINGS* *COMMENT Temperature under Bias ........................–65°C to +135°C Storage Temperature .............................–65°C to +150°C Voltage on any Pin with Respect to VSS....... –1.0V to +7V D.C. Output Current ....................................................5mA Lead Temperature (Soldering, 10 seconds)............ 300°C Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and the functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS Temp Min. Max. Commercial 0°C 70°C Industrial –40°C +85°C Supply Voltage X25XXX–1.8 X25XXX–2.7 X25XXX 7036 FRM T07 Limits 1.8V-3.6V 2.7V to 5.5V 4.5V-5.5V 7036 FRM T08 D.C. OPERATING CHARACTERISTICS (Over the recommended operating conditions unless otherwise specified.) Limits Symbol Parameter Min. Typ. Max. Units Test Conditions ICC1 VCC Write Current (Active) 5 mA SCK = VCC x 0.1/VCC x 0.9 @ 2MHz, SO = Open ICC2 VCC Read Current (Active) 0.4 mA SCK = VCC x 0.1/VCC x 0.9 @ 2MHz, SO = Open ISB1 VCC Standby Current WDT=OFF 1 µA CS = VCC, VIN = VSS or VCC, VCC = 5.5V ISB2 VCC Standby Current WDT=ON 50 µA CS = VCC, VIN = VSS or VCC, VCC = 5.5V ISB3 VCC Standby Current WDT=ON 20 µA CS = VCC, VIN = VSS or VCC, VCC =3.6V ILI Input Leakage Current 0.1 10 µA VIN = VSS to VCC Output Leakage Current 0.1 10 µA VOUT = VSS to VCC ILO (1) Input LOW Voltage –0.5 VCCx0.3 V (1) VIH VOL1 Input HIGH Voltage VCCx0.7 VCC+0.5 V Output LOW Voltage 0.4 V VCC > 3.3V, IOL = 2.1mA VOL2 Output LOW Voltage 0.4 V 2V < VCC ≤ 3.3V, IOL = 1mA VOL3 Output LOW Voltage 0.4 V VCC ≤ 2V, IOL = 0.5mA VOH1 Output HIGH Voltage VCC–0.8 V VCC > 3.3V, IOH = –1.0mA VOH2 Output HIGH Voltage VCC–0.4 V 2V < VCC ≤ 3.3V, IOH = –0.4mA VOH3 Output HIGH Voltage VCC–0.2 V VCC ≤ 2V, IOH = –0.25mA VOLRS Reset Output LOW Voltage V IOL = 1mA VIL 0.4 7036 FRM T09 POWER-UP TIMING Symbol (2) tPUR (2) tPUW Parameter Power-up to Read Operation Power-up to Write Operation Min. Max. Units 1 ms 5 ms 7036 FRM T10 CAPACITANCE TA = +25°C, f = 1MHz, VCC = 5V. Symbol (2) COUT (2) Test Output Capacitance (SO, RESET, RESET) Input Capacitance (SCK, SI, CS, WP) CIN Notes: (1) VIL min. and VIH max. are for reference only and are not tested. (2) This parameter is periodically sampled and not 100% tested. 8 Max. Units Conditions 8 pF VOUT = 0V 6 pF VIN = 0V 7036 FRM T11 X25648/49, X25328/29, X25168/69 EQUIVALENT A.C. LOAD CIRCUIT AT 5V VCC 5V A.C. TEST CONDITIONS VCC x 0.1 to VCC x 0.9 Input Pulse Levels 5V Input Rise and Fall Times 3.3KΩ 1.64KΩ 10ns VCC x0.5 Input and Output Timing Level 7036 FRM T12 OUTPUT RESET/RESET 1.64KΩ 100pF 30pF A.C. CHARACTERISTICS (Over recommended operating conditions, unless otherwise specified) Data Input Timing Symbol Parameter Voltage Range Min. Max. Units 2 1 MHz fSCK Clock Frequency 2.7V–5.5V 1.8V–3.6V 0 tCYC Cycle Time 2.7V–5.5V 1.8V–3.6V 500 1000 ns tLEAD CS Lead Time 2.7V–5.5V 1.8V–3.6V 250 500 ns tLAG CS Lag Time 2.7V–5.5V 1.8V–3.6V 250 500 ns tWH Clock HIGH Time 2.7V–5.5V 1.8V–3.6V 200 400 ns tWL Clock LOW Time 2.7V–5.5V 1.8V–3.6V 200 400 ns tSU Data Setup Time 2.7V–5.5V 1.8V–3.6V 50 ns tH Data Hold Time 2.7V–5.5V 1.8V–3.6V 50 ns tRI(3) Input Rise Time 2.7V–5.5V 1.8V–3.6V 100 ns tFI(3) Input Fall Time 2.7V–5.5V 1.8V–3.6V 100 ns tCS CS Deselect Time 2.7V–5.5V 1.8V–3.6V tWC(4) Write Cycle Time 2.7V–5.5V 1.8V–3.6V 500 ns 10 ms 7036 FRM T13 9 X25648/49, X25328/29, X25168/69 Data Output Timing Symbol Parameter Part Number Min. Max. Units 0 2 1 MHz fSCK Clock Frequency 2.7V–5.5V 1.8V–3.6V tDIS Output Disable Time 2.7V–5.5V 1.8V–3.6V 250 ns tV Output Valid from Clock Low 2.7V–5.5V 1.8V–3.6V 200 400 ns tHO Output Hold Time 2.7V–5.5V 1.8V–3.6V tRO(3) Output Rise Time 2.7V–5.5V 1.8V–3.6V 100 ns tFO(3) Output Fall Time 2.7V–5.5V 1.8V–3.6V 100 ns 0 ns 7036 FRM T14 Notes: (3) This parameter is periodically sampled and not 100% tested. (4) tWC is the time from the rising edge of CS after a valid write sequence has been sent to the end of the self-timed internal nonvolatile write cycle. 10 X25648/49, X25328/29, X25168/69 Serial Output Timing CS t CYC tWH t LAG SCK tV SO SI tHO MSB OUT t WL tDIS MSB–1 OUT LSB OUT ADDR LSB IN Serial Input Timing tCS CS tLEAD tLAG SCK tSU SI tH tRI MSB IN t FI LSB IN HIGH IMPEDANCE SO 11 X25648/49, X25328/29, X25168/69 Power-Up and Power-Down Timing VCC VTRIP V TRIP tPURST 0 Volts tPURST tR tF tRPD RESET (X25643) RESET (X25645) RESET Output Timing Symbol Parameter Min. Typ. Max. Units 4.5 2.7 1.8 V V V 280 ms 500 ns VTRIP Reset Trip Point Voltage, 5V Device Reset Trip Point Voltage, 2.7V Device Reset Trip Point Voltage, 1.8V Device 4.25 2.55 1.7 tPURST Power-up Reset Timeout 100 tRPD(5) VCC Detect to Reset/Output tF(5) VCC Fall Time 0.1 ns tR(5) VCC Rise Time 0.1 ns VRVALID Reset Valid VCC 1 200 V 7036 FRM T15 Notes: (5) This parameter is periodically sampled and not 100% tested. 12 X25648/49, X25328/29, X25168/69 PACKAGING INFORMATION 14-LEAD PLASTIC SMALL OUTLINE GULL WING PACKAGE TYPE S 0.150 (3.80) 0.158 (4.00) 0.228 (5.80) 0.244 (6.20) PIN 1 INDEX PIN 1 0.014 (0.35) 0.020 (0.51) 0.336 (8.55) 0.345 (8.75) (4X) 7° 0.053 (1.35) 0.069 (1.75) 0.004 (0.10) 0.010 (0.25) 0.050 (1.27) 0.050" Typical 0.010 (0.25) X 45° 0.020 (0.50) 0.050" T ypical 0° – 8° 0.250" 0.0075 (0.19) 0.010 (0.25) 0.016 (0.410) 0.037 (0.937) FOO TPRINT 0.030" Typical 14 Places NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS) 13 X25648/49, X25328/29, X25168/69 8-LEAD PLASTIC SMALL OUTLINE GULL WING PACKAGE TYPE S 0.150 (3.80) 0.158 (4.00) 0.228 (5.80) 0.244 (6.20) PIN 1 INDEX PIN 1 0.014 (0.35) 0.019 (0.49) 0.188 (4.78) 0.197 (5.00) (4X) 7° 0.053 (1.35) 0.069 (1.75) 0.004 (0.19) 0.010 (0.25) 0.050 (1.27) 0.010 (0.25) 0.020 (0.50) X 45° 0.050" TYPICAL 0.050" TYPICAL 0° – 8° 0.0075 (0.19) 0.010 (0.25) 0.250" 0.016 (0.410) 0.037 (0.937) FOOTPRINT NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS) 14 0.030" TYPICAL 8 PLACES X25648/49, X25328/29, X25168/69 14-LEAD PLASTIC, TSSOP, PACKAGE TYPE V .025 (.65) BSC .169 (4.3) .252 (6.4) BSC .177 (4.5) .193 (4.9) .200 (5.1) .047 (1.20) .0075 (.19) .0118 (.30) .002 (.05) .006 (.15) .010 (.25) Gage Plane 0° – 8° Seating Plane .019 (.50) .029 (.75) Detail A (20X) .031 (.80) .041 (1.05) See Detail “A” NOTE: ALL DIMENSIONS IN INCHES (IN PARENTHESES IN MILLIMETERS) 15 X25648/49, X25328/29, X25168/69 ORDERING INFORMATION X25648/49 X25328/29 X25168/69 P T -V VCC Limits Blank = 5V ±10% 2.7 = 2.7V to 5.5V 1.8 = 1.8V to 3.6V Device Temperature Range Blank = Commercial = 0°C to +70°C I = Industrial = –40°C to +85°C Package S14 = 14-Lead SOIC S8 = 8-Lead SOIC V14 = 14-Lead TSSOP Part Mark Convention X25648/49 X Blank = 14-Lead SOIC X25328/29 X25168/69 X X Blank = 8-Lead SOIC V = 14 Lead TSSOP X Blank = 5V ±10%, 0°C to +70°C I = 5V ±10%, –40°C to +85°C F = 2.7V to 5.5V, 0°C to +70°C G = 2.7V to 5.5V, –40°C to +85°C AG = 1.8V to 3.6V, 0°C to +70°C Blank = 5V ±10%, 0°C to +70°C I = 5V ±10%, –40°C to +85°C F = 2.7V to 5.5V, 0°C to +70°C G = 2.7V to 5.5V, –40°C to +85°C AG = 1.8V to 3.6V, 0°C to +70°C LIMITED WARRANTY Devices sold by Xicor, Inc. are covered by the warranty and patent indemnification provisions appearing in its Terms of Sale only. Xicor, Inc. makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. Xicor, Inc. makes no warranty of merchantability or fitness for any purpose. Xicor, Inc. reserves the right to discontinue production and change specifications and prices at any time and without notice. Xicor, Inc. assumes no responsibility for the use of any circuitry other than circuitry embodied in a Xicor, Inc. product. No other circuits, patents, licenses are implied. U.S. PATENTS Xicor products are covered by one or more of the following U.S. Patents: 4,263,664; 4,274,012; 4,300,212; 4,314,265; 4,326,134; 4,393,481; 4,404,475; 4,450,402; 4,486,769; 4,488,060; 4,520,461; 4,533,846; 4,599,706; 4,617,652; 4,668,932; 4,752,912; 4,829, 482; 4,874, 967; 4,883, 976. Foreign patents and additional patents pending. LIFE RELATED POLICY In situations where semiconductor component failure may endanger life, system designers using this product should design the system with appropriate error detection and correction, redundancy and back-up features to prevent such an occurence. Xicor’s products are not authorized for use in critical components in life support devices or systems. 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. 16