XC9401 Series ETR3201-006 Off-line Controllers for LED Lighting ■GENERAL DESCRIPTION The XC9401 series are off-line controller ICs for LED lighting. Through optimization of the external components, these ICs can be made to operate in a range from 85VAC to 270VAC, as well as by DC input, and a diversity of specifications can be achieved by selecting components appropriate for the circuit configuration. Fixed off-time control is used for the basic control method, and by detecting the current that flows to the external power MOSFET, the current that flows to the LED is monitored to provide a stable power supply for LED lighting. Two product series differing by function type are available, the XC9401A type and the XC9401B type. The circuit configuration of type A is designed for the power factor, achieving a high power factor by synchronizing the LED current to the input current (sine wave). In this circuit configuration, a high-capacity, high-withstand voltage electrolytic capacitor is not necessary after the bridge rectifier circuit from the AC input. The input filter removes high frequency switching noise from the AC line, allowing a small-capacity ceramic capacitor to be used. Type B holds the peak current due to switching that flows to the external power MOSFET constant, enabling the LED current to be kept constant. By keeping the LED current constant, this circuit configuration makes it possible to achieve a stable light source with high efficiency. ■TYPICAL APPLICATION CIRCUITS ■APPLICATIONS ●LED lights ( <=10W ) ●LED lamps ●LED tube lights ●LED spot lights ●LED stands (XC9401B605MR-G 100VAC Non-isolation buck Type) L1 1mH 100VAC /110VAC R5 33kΩ BR1 B4S C1 0.1μF/250V ■FEATURES + R6 33kΩ C2 10μF/250V C3 10μF/25V Operating Voltage : 85VAC ~ 270VAC VDD Input Voltage Range : 9V ~ 15V Fixed Off-time Protection Circuits : 6.0μs : Thermal Shutdown 150oC (TYP.) D1 RF071M2S C4 1uF/100V LED 20Series/110mA ZD1 12V L2 3.3mH NF VDD Over voltage protection, VDD=18V (TYP.) Dimming : UVLO, VDD=6.5V (TYP.) Over current protection VISEN=0.7V (TYP.) PWM Dimming Package Operating Ambient Temperature Environmentally Friendly : SOT-26 : -40oC ~ +85oC : EU RoHS Compliant, Pb Free EN/DIM VDD GATE R7 20Ω Q1 IPD60R3K3C6 ISEN R3 2.2Ω GND R4 JP ■SOLUTION EXAMPLES Input Voltage Product Type Isolation / Non-Isolation Topology Efficiency Power Factor 100VAC / 110VAC XC9401B605MR Non-Isolation Buck 91% 0.6 Isolation Flyback 83% 0.6 82% 0.9 XC9401B605MR Non-Isolation Buck 87% 0.6 XC9401B605MR - Buck 88% - XC9401B605MR - Buck-Boost 86% - 220VAC / 240VAC 220VAC / 240VAC DC / 12VAC XC9401B605MR XC9401A605MR *Due to dispersion of constant values of external components, the above values may be deviated. Please understand that the above are typical values. For details, refer to the XC9401 Series Application Notes. 1/19 XC9401Series ■BLOCK DIAGRAM 1) XC9401 Series, Type A VDD VREF (Bandgap reference) Voltage Regulator 5V to Internal Circuits Thermal Shutdown 150℃ 180Ω UVLO 6.5V / 7.5V EN/DIM OVP 16.5V / 18V Off Time Controller 140μs (Over Current Limit) EN/DIM & DELAY Off Time Controller 6μs Min. ON Time Controller VSINE Buffer Drive & Voltage Level Shifter Logic GATE 0.7V ×0.2783 CMP PWMCMP GND ISEN Over Current Limit 2) XC9401 Series, Type B VDD VREF (Bandgap reference) Voltage Regulator 5V to Internal Circuits Thermal Shutdown 150℃ 180Ω UVLO 6.5V / 7.5V EN/DIM OVP 16.5V / 18V Off Time Controller 140μs (Over Current Limit) EN/DIM & DELAY Off Time Controller 6μs Min. ON Time Controller NF Buffer Drive & Voltage Level Shifter Logic GATE 0.7V ×0.2783 PWMCMP CMP GND ISEN Over Current Limit 2/19 XC9401 Series ■ PRODUCT CLASSIFICATION ●Ordering Information XC9401①②③④⑤⑥-⑦ DESIGNATOR ITEM ① Type A DESCRIPTION Refer to Selection Guide B ② OFF Time 6 OFF Time is fixed in 6μs ③④ Accuracy 05 ISEN Voltage Accuracy is ±5% ⑤⑥-⑦ (*1) SYMBOL Package (*1) (Order Unit) MR-G SOT-26 (3,000/Reel) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant. ●Selection Guide TYPE COMPARISON WITH ISEN PWM DIMMING A "VSINE" × 0.2783 "VREF" × 0.278 Yes Yes B DESCRIPTION Type A is suitable for PFC circuit. Type B is suitable for constant LED current circuit. ■PIN CONFIGURATION *Type A *Type B ■PIN ASSIGNMENT PIN NUMBER PIN NAME FUNCTIONS 1 ISEN Current Feedback 2 VDD Power Input 3 GATE External Power MOS Drive 4 EN/DIM Active / Stand-by / PWM Dimming Control SOT-26 5 GND Ground 6 Type A: VSINE Type B: NF VSINE Pin: Current Feedback Reference Voltage Input. NF Pin: No Function. Please connect to GND. 3/19 XC9401Series ■FUNCTION PIN NAME EN/DIM STATUS L Stand-by Mode H Active Mode EN/DIM OPEN (*1) Undefined State (*1) Prohibited in the XC9401 series due to undefined operation. ■ABSOLUTE MAXIMUM RATINGS o Ta=25 C PARAMETER SYMBOL RATINGS UNITS VDD Pin Voltage VDD -0.3 ~ +19.4 V EN/DIM Pin Voltage VENDIM -0.3 ~ +19.4 GATE Pin Voltage VMODE ISEN Pin Voltage VISEN VSINE Pin Voltage VSINE NF Pin Voltage VNF -0.3 ~ VDD+0.3 or +19.4 V (*2) V -0.3 ~ 5.5 V -0.3 ~ 5.5 mA Pd 250 mW Operating Ambient Temperature Topr -40 ~ +85 ℃ Storage Temperature Tstg -55 ~ +125 ℃ Power Dissipation SOT-26 (*1) All voltages are described based on GND. (*2) The maximum value should be either VDD+0.3 or +19.4V in the lowest. 4/19 XC9401 Series ■ELECTRICAL CHARACTERISTICS Ta=25 oC XC9401 Series, Type A PARAMETER SYMBOL VDD Voltage Range VDD ISEN Voltage VISEN VSINE Voltage Range (*2) CONDITIONS VISEN=SWEEP (*1) , VSINE =1V VSINE UVLO Detect Voltage VUVLO MIN. TYP. MAX. UNITS CIRCUIT 9 - 15 V ① 0.2644 0.2783 0.2922 V ① GND - 1.8 V ① VDD=SWEEP (*3) 5.5 6.5 7.5 V ① (*4) UVLO Release Voltage VUVLOR VDD=SWEEP 6.5 7.5 8.5 V ① UVLO Hysteresis Width VUVLOH VUVLOH=VUVLOR - VUVLO - 1.1 - V ① VDD=VEN/DIM=15V - 250 300 μA ① - 225 280 μA ① Supply Current (*5) Stand-by Current IDD (*6) ISTB VDD Overvoltage Protection Voltage VDD Overvoltage Protection Release Voltage VDD Overvoltage Protection Hysteresis Width VDD Overvoltage Protection Discharge Current (*7) VOVP VDD=SWEEP (*3) , VEN/DIM=VDD 17 18 19 V ① VOVPR VDD=SWEEP (*4) , VEN/DIM=VDD 15.5 16.5 17.5 V ① VOVPH VOVPH=VOVP - VOVPR - 1.5 - V ① VDD=19V - 30 - mA ① 2 5 8 Ω ③ - 5 - Ω ④ IOVP GATE “H” ON Resistance RGATEH GATE “L” ON Resistance RGATEL OFF Time (*9) tOFF Minimum ON Time Current Limit Voltage tONMIN (*10) Thermal Shutdown Temperature (*11) Thermal Shutdown Release Temperature Thermal Shutdown Hysteresis Width VDD=15V, VEN/DIM=GND, VSINE=GND VLIM IGATE = -10mA RGATEH = (VDD-VGATE) / IGATE VISEN=1V, R1=300Ω RGATEL= VGATE / IR1 (*8) VISEN=0.4V, VSINE=1V - 6 - μs ① VISEN=1V - 0.2 - μs ① 0.65 0.70 0.95 V ① VISEN=SWEEP, VSINE=1.4V TTSD - 150 - o TTSDR - 130 - o ① THYS - 20 - o C ① C C ① PWM Dimmer Delay Time1 (*12) tPWMDIM1 VEN/DIM=2.2V to GND - 0.3 4.0 μs ② PWM Dimmer Delay Time2 (*13) tPWMDIM2 VEN/DIM=GND to 2.2V 100 140 200 μs ② 2.2 - 15.0 V ① GND - 0.4 V ① - - 32 μA ① EN/DIM “H” Voltage VEN/DIMH EN/DIM “L” Voltage VEN/DIML EN/DIM Bias Current IEN/DIMH VEN/DIM=15V Unless otherwise stated, GND standard, VDD=13V, VEN/DIM=VDD, VISEN=GND, VSINE=5.5V (*1) ISEN pin voltage measured at start of GATE pin switching. (*2) Indicates VSINE pin voltage at which OFF TIME 6μs switching becomes possible. (*3) VDD pin voltage measured when GATE pin=L occurs. (*4) VDD pin voltage measured when GATE pin=H occurs. (*5) Indicates internal supply current when “H” level is input into EN/DIM pin and all circuits are activated. (When not switching.) (*6) Indicates internal supply current when “L” level is input into EN/DIM pin and the switching circuit is stopped. (*7) Indicates the current that discharges the capacitance between the VDD and GND pins at VOVP. (*8) Please refer to P.7 “CIRCUIT④”. (*9) May not be fixed at 6μs when UVLO is detected or during DIM signal control. (*10) When the current limit voltage VLIM is exceeded, off time is extended to about 140μs to prevent element damage. For details, refer to the operation description. (*11) o To protect the IC from thermal destruction, thermal shutdown activates when the chip temperature reaches 150 C and forcibly sets the GATE o pin voltage to “L”. When the chip temperature falls to 130 C, operation resumes. (*12) Time from attainment of EN/DIM “L” voltage until GATE pin=L. (*13) Time from attainment of EN/DIM “H” voltage until GATE pin=H. 5/19 XC9401Series ■ELECTRICAL CHARACTERISTICS (Continued) Ta=25 oC XC9401 Series, Type B PARAMETER SYMBOL VDD Voltage Range VDD ISEN Voltage VISEN UVLO Detect Voltage VUVLO CONDITIONS VISEN=SWEEP (*1) MIN. TYP. MAX. UNITS CIRCUIT 9 - 15 V ① 0.3259 0.3430 0.3602 V ① VDD=SWEEP (*2) 5.5 6.5 7.5 V ① (*3) 6.5 7.5 8.5 V ① UVLO Release Voltage VUVLOR VDD=SWEEP UVLO Hysteresis Width VUVLOH VUVLOH=VUVLOR - VUVLO - 1.1 - V ① IDD VDD=VEN/DIM=15V - 250 300 μA ① Supply Current (*4) Stand-by Current (*5) VDD Overvoltage Protection Voltage VDD Overvoltage Protection Release Voltage VDD Overvoltage Protection Hysteresis Width VDD Overvoltage Protection Discharge Current (*6) ISTB VDD=15V, VEN/DIM=GND - 225 280 μA ① VOVP VDD=SWEEP (*2) 17 18 19 V ① VOVPR VDD=SWEEP (*3) 15.5 16.5 17.5 V ① VOVPH VOVPH=VOVP - VOVPR - 1.5 - V ① VDD=19V - 30 - mA ① 2 5 8 Ω ③ - 5 - Ω ④ VISEN=0.45V - 6 - μs ① VISEN=1V - 0.2 - μs ① 0.65 0.70 0.95 V ① IOVP GATE “H” ON Resistance RGATEH GATE “L” ON Resistance RGATEL OFF Time (*8) tOFF Minimum ON Time Current Limit Voltage tONMIN (*9) Thermal Shutdown Temperature VLIM (*10) Thermal Shutdown Release Temperature Thermal Shutdown Hysteresis Width IGATE = -10mA RGATEH = (VDD - VGATE) / IGATE VISEN=1V, R1=300Ω RGATEL= VGATE / IR1 (*7) VISEN=SWEEP TTSD - 150 - o TTSDR - 130 - o ① THYS - 20 - o C ① C C ① PWM Dimmer Delay Time1 (*11) tPWMDIM1 VEN/DIM=2.2V to GND - 0.3 4.0 μs ① PWM Dimmer Delay Time2 (*12) tPWMDIM2 VEN/DIM=GND to 2.2V 100 140 200 μs ② EN/DIM “H” Voltage VEN/DIMH 2.2 - 15.0 V ② EN/DIM “L” Voltage VEN/DIML GND - 0.4 V ① EN/DIM Bias Current IEN/DIMH - - 32 μA ① VEN/DIM=15V Unless otherwise stated, GND standard, VDD=13V, VEN/DIM=VDD, VISEN=GND, VSINE=5.5V (*1) ISEN pin voltage measured at start of GATE pin switching. (*2) Indicates VSINE pin voltage at which OFF TIME 6μs switching becomes possible. (*3) VDD pin voltage measured when GATE pin=L occurs. (*4) VDD pin voltage measured when GATE pin=H occurs. (*5) Indicates internal supply current when “H” level is input into EN/DIM pin and all circuits are activated. (When not switching.) (*6) Indicates internal supply current when “L” level is input into EN/DIM pin and the switching circuit is stopped. (*7) Indicates the current that discharges the capacitance between the VDD and GND pins at VOVP. (*8) Please refer to P.8 “CIRCUIT④”. (*9) May not be fixed at 6μs when UVLO is detected or during DIM signal control. (*10) When the current limit voltage VLIM is exceeded, off time is extended to about 140μs to prevent element damage. For details, refer to the operation description. (*11) o To protect the IC from thermal destruction, thermal shutdown activates when the chip temperature reaches 150 C and forcibly sets the o GATE pin voltage to “L”. When the chip temperature falls to 130 C, operation resumes. (*12) Time from attainment of EN/DIM “L” voltage until GATE pin=L. (*13) Time from attainment of EN/DIM “H” voltage until GATE pin=H. 6/19 XC9401 Series ■TYPICAL APPLICATION CIRCUIT (Type A) 1) CIRCUIT① A ISEN VSINE VDD GND GATE EN/DIM A SW1 VDD CVDD VISEN V V Waveform measure point VCEDIM V V VSINE V 2) CIRCUIT② A ISEN VSINE VDD GND GATE VDD CVDD VISEN V V EN/DIM PWM signal Waveform measure point VSINE V V 3) CIRCUIT③ ISEN VSINE VDD GND GATE VDD IGATE CVDD VISEN V V EN/DIM ↓ VSINE V V 4) CIRCUIT④ A IR1 R1 ISEN VSINE VDD GND GATE VDD CVDD VISEN V V EN/DIM Waveform measure point V VSINE V 7/19 XC9401Series ■TYPICAL APPLICATION CIRCUIT (Continued) (Type B) 1) CIRCUIT① A ISEN NF VDD GND GATE EN/DIM A SW1 VDD CVDD VISEN V V Waveform measure point VCEDIM V V 2) CIRCUIT② A ISEN NF VDD GND GATE VDD CVDD VISEN V V EN/DIM PWM signal Waveform measure point V 3) CIRCUIT③ ISEN NF VDD GND GATE VDD IGATE CVDD VISEN V V EN/DIM ↓ V 4) CIRCUIT④ A IR1 R1 ISEN NF VDD GND GATE VDD 8/19 CVDD VISEN V V EN/DIM Waveform measure point V XC9401 Series ■OPERATIONAL EXPLANATION The internal circuitry of the XC9401 series consists of a reference voltage source (VREF), PWM comparator (PWMCMP), buffer drive circuit (Buffer Drive), over-current protection circuit (Over Current Limit), under-voltage lockout circuit (UVLO), VDD over voltage protection circuit (OVP), thermal shutdown circuit (Thermal Shutdown), and other circuits. (Refer to the block diagram.) The control method is fixed off-time control. With type A, the PWM comparator compares the voltage at the ISEN pin to that at the VSINE pin x 0.2783 (TYP.) The output of the PWM comparator is connected to the buffer drive circuit and an external Power MOS FET drive signal is output from the GATE pin. When the ISEN pin voltage is 0.2783 times (TYP.) higher than the VSINE pin voltage, the GATE pin switches to low. After a fixed off-time elapses, the GATE pin switches to high. This operation is repeated continuously. With type B, the PWM comparator compares the 0.343V (TYP.), which is 0.2783 times (TYP.) the reference voltage, to the ISEN pin voltage. Fig.1. Reference Circuit 9/19 XC9401Series ■OPERATIONAL EXPLANATION (Continued) Details of each circuit block are as follows. <Reference voltage supply (VREF)> Reference voltage that enables stable operation of the internal functions of the IC. <PWM comparator (PWMCMP)> With type A, the PWM comparator compares the voltage at the ISEN pin to that at the VSINE pin x 0.2783 (TYP.) When the ISEN pin voltage is higher than VSINE x 0.2783, the GATE pin switches to low. With type B, the PWM comparator compares the 0.343V (TYP.), which is 0.2783 times (TYP.) the reference voltage, to the ISEN pin voltage. <Buffer drive circuit (Buffer Drive)> This outputs an H or L signal from the GATE pin that drives the external Power MOS FET. The H level is the VDD pin voltage, and the L level is the GND pin voltage. The signal that is output is determined by the PWM comparator, as well as by the below described UVLO circuit, VDD over-voltage protection circuit, over-current protection circuit, thermal shutdown, and EN/DIM pin voltage. <Enable / PWM Dimming (EN/DIM)> When the power is turned on, it takes about 200μs (MAX.) for the GATE pin to initially become “H” after the EN/DIM pin voltage is changed from “L” to “H”. Inputting “L” to the EN/DIM pin voltage forcibly puts the GATE pin voltage in the “L” state. The stopped state when the EN/DIM pin voltage is “L” is not shutdown; rather, it is a Stand-by state wherein the switching pulse output is stopped by logic circuit and the internal circuitry continues to operate. For this reason, a high-speed response is possible even when a pulse signal (500 Hz to 1 kHz) is input to the EN/DIM pin, and by adjusting the duty width of the PWM signal input into the EN/DIM pin, the LED can be dimmed. < Minimum on time controller circuit > Spike noise and ripple noise occur in the XC9401 series due to switching. To prevent malfunction of the internal circuit by such noises, a minimum on time is established. The GATE pin voltage is forcibly kept at “H” until the minimum on time elapses. (Refer to Fig. 2.) During the minimum on time, if the below described UVLO, OVP or thermal shutdown is detected, or if the Stand-by state is set from the EN/DIM pin, the GATE pin voltage is immediately changed to “L”. <Off Time Controller> This circuit controls the fixed off time. The off time is normally fixed at 6μs (TYP.), and the GATE pin voltage is kept at “L” during this time. After the fixed off time, the GATE pin voltage becomes “H”. (Refer to Fig. 2.) If the EN/DIM pin voltage is changed from “L” to “H” during the above PWM dimming, the off time is 140μs (TYP.) during the over-current protection and ULVO release described below. Fig.2. Off Time Controller, Min. On Time Controller 10/19 XC9401 Series ■OPERATIONAL EXPLANATION (Continued) <Over Current Limit> When the switching current of the external power MOSFET is in the over-current state and the ISEN pin voltage reaches 0.7V (TYP.), L level voltage is output to the GATE pin and the external power MOSFET is turned off. In addition, the off time is temporarily extended from the normal 6.0μs (TYP.) to 140μs (TYP.). When the ISEN pin voltage falls to 0.7V (TYP.) or less after the extended off time, normal operation resumes. When LED+ and LED- short circuit in the reference circuit shown in Fig.1, the current slope of the coil (L2) becomes smaller during the off time than the slope during normal switching, which prevents sufficient discharge during the 6.0μs (TYP.) off time. During the minimum on time, the external power MOSFET Q1 always turns on, and thus the coil current gradually increases. The ISEN pin voltage becomes higher at the same time as the coil current increases, and when the ISEN pin voltage reaches 0.7V (TYP.), the off time is extended to 140μs (TYP.). (Refer to Fig.3) Fig.3. Over Current Limit (Fig.1. Operation when LED+ and LED- short-circuit in the reference circuit) <Under-voltage lockout circuit> When the VDD pin voltage falls to the UVLO Detect Voltage (VUVLO) or lower, the GATE pin voltage is forcibly set to “L” to prevent incorrect pulse output. When the VDD pin voltage rises to the UVLO Release Voltage (VUVLOR) or higher, switching resumes. A UVLO stop simply stops pulse output; it is not a shutdown state and the internal circuitry continues to operate. <VDD over-voltage protection circuit> When the VDD pin voltage rises to the VDD Overvoltage Protection Voltage (VOVP) or higher, the charge of the capacitance between the VDD pin and GND pin is discharged by the resistance and transistor connected between the VDD pin and GND pin in order to prevent withstand voltage destruction in the internal circuitry. The GATE pin voltage at this time is forcibly set to “L”. When the VDD pin voltage falls to the VDD Overvoltage Protection Release Voltage (VOVPR) or lower, switching is resumed. <Thermal shutdown> To protect the IC from thermal destruction, thermal shutdown activates when the chip temperature reaches 150 oC (TYP.) and forcibly sets the GATE pin voltage to “L”. When the chip temperature falls to 130 oC (TYP.), switching is resumed. 11/19 XC9401Series ■NOTE ON USE 1. For the phenomenon of temporal and transitional voltage decrease or voltage increase, the IC may be damaged or deteriorated if IC is used beyond the absolute MAX. specifications. 2. In a switching controller such as the XC9401 series, and in a peripheral circuit controlled by a switching controller, spike voltage and ripple voltage occur. These are greatly affected by the peripheral components (inductance value of the coil, capacitors, peripheral component board layout). During design, test sufficiently using the actual equipment. 3. A delay time of 200μs (MAX.) after the UVLO release voltage, and after EN/DIM pin voltage “H”, has been established in the IC. Keep these delay times in mind during sequence design. 4. The NF pin of the XC9401B605MR-G is connected to part of the internal circuitry, although not as a circuit function. When using this IC, connect this pin to GND. 5. Make sure to use this IC within specified electric characteristics. 6. Please pay attention not to exceed absolute maximum ratings of this IC and external components. 7. To reduce VDD fluctuations as much as possible, connect a bypass capacitor (CVDD) over the shortest path between VDD and GND. If there is too much distance between the IC and CVDD, operation may become unstable. 8. Please mount each external component as close to the IC as possible. Please also wire external components as close to the IC as possible and use thick, short connecting traces to reduce the circuit impedance. 9. Sufficiently reinforce the wiring between VDD and GND. Noise that enters through VDD and GND during switching may cause unstable IC operation. 10. Torex places an importance on improving our products and their reliability. We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems. 12/19 XC9401 Series ■ TYPICAL PERFORMANCE CHARACTERISTICS (1) Supply Current vs. VDD Voltage (2) Supply Current vs. Ambient Temperature XC9401 XC9401 VENDIM=VDD , VISEN =GND VSINE=5.5V(Type A) or VNF=GND(Type B) C VDD =10μF(TMK316BJ106KL-T) VDD =15V, VENDIM=VDD , VISEN =GND VSINE=5.5V(Type A) or VNF=GND(Type B) CVDD =10μF(TMK316BJ106KL-T) 280 250 Supply Current [μA] Supply Current [μA] 300 200 150 Ta=-40℃ Ta=25℃ 100 Ta=85℃ 50 0 260 240 220 200 1 3 5 7 9 11 13 -50 15 -25 V DD Voltage [V] 0 25 (3) Stand-by Current vs. VDD Voltage 100 XC9401 VENDIM=GND, VISEN =GND VSINE=GND(Type A) or VNF=GND(Type B) C VDD =10μF(TMK316BJ106KL-T) VDD =15V, VENDIM=GND, VISEN =GND VSINE=0V(Type A) or VNF=GND(Type B) CVDD =10μF(TMK316BJ106KL-T) 260 300 250 Stand-by Current [μA] Stand-by Current [μA] 75 (4) Stand-by Current vs. Ambient Temperature XC9401 200 150 Ta=-40℃ 100 Ta=25℃ 240 220 200 Ta=85℃ 50 0 180 1 3 5 7 9 11 13 -50 15 -25 V DD Voltage [V] 0 25 50 75 100 Ambient Temperature : Ta [℃] (5) EN/DIM Bias Current vs. EN/DIM Voltage (6) EN/DIM Bias Current vs. Ambient Temperature XC9401 XC9401 VDD =13V, ISEN =GND VSINE=5.5V(Type A) or VNF=GND(Type B) C VDD =10μF(TMK316BJ106KL-T) VDD =13V, VEN/DIM=13V, VISEN =GND VSINE=5.5V(Type A) or VNF=GND(Type B) CVDD =10μF(TMK316BJ106KL-T) 16 20 EN/DIM Bias Current [μA] EN/DIM Bias Current [μA] 50 Ambient Temperature : Ta [℃] Ta=-40℃ Ta=25℃ Ta=85℃ 16 12 8 4 0 14 12 10 8 6 1 3 5 7 9 11 13 EN/DIM Voltage [V] -50 15 -25 0 25 50 75 100 Ambient Temperature : Ta [℃] (7) ISEN Voltage vs. Ambient Temperature XC9401A605MR XC9401B605MR VDD =13V, VENDIM=VDD VNF=GND(Type B) CVDD =10μF(TMK316BJ106KL-T) 0.2950 0.3600 0.2850 0.3550 ISEN Voltage [V] ISEN Voltage [V] VDD =13V, VENDIM=VDD VSINE=1.0V(Type A) C VDD =10μF(TMK316BJ106KL-T) 0.2750 0.2650 0.2550 0.3500 0.3450 0.3400 0.2450 0.3350 -50 -25 0 25 50 75 Ambient Temperature : Ta [℃] 100 -50 -25 0 25 50 75 100 Ambient Temperature : Ta [℃] 13/19 XC9401Series ■ TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (9) UVLO Release Voltage vs. Ambient Temperature XC9401 XC9401 VENDIM=VDD, VISEN =GND VSINE=5.5V(Type A) or VNF=GND(Type B) CVDD =10μF(TMK316BJ106KL-T) VENDIM=VDD, VISEN =GND VSINE=5.5V(Type A) or VNF=GND(Type B) C VDD =10μF(TMK316BJ106KL-T) 7.5 UVLO Release Voltage [V] UVLO Detect Voltage [V] (8) UVLO Detect Voltage vs. Ambient Temperature 7.1 6.7 6.3 5.9 5.5 -50 -25 0 25 50 75 8.5 8.1 7.7 7.3 6.9 6.5 -50 100 Ambient Temperature : Ta [℃] -25 0 25 50 75 100 125 Ambient Temperature : Ta [℃] (10) UVLO Hysteresis Width vs. Ambient Temperature XC9401 UVLO Hysteresis Width [V] VENDIM=VDD, VISEN =GND VSINE=5.5V(Type A) or VNF=GND(Type B) CVDD =10μF(TMK316BJ106KL-T) 1.30 1.25 1.20 1.15 1.10 1.05 -50 -25 0 25 50 75 100 Ambient Temperature : Ta [℃] (11) VDD Overvoltage Protection Voltage (12) VDD Overvoltage Protection Release Voltage vs. Ambient Temperature vs. Ambient Temperature XC9401 VENDIM=VDD, VISEN =GND VSINE=5.5V(Type A) or VNF=GND(Type B) CVDD =10μF(TMK316BJ106KL-T) XC9401 VENDIM=VDD, VISEN =GND VSINE=5.5V(Type A) or VNF=GND(Type B) C VDD =10μF(TMK316BJ106KL-T) 16.8 V DD Overvoltage Protection Release Voltage [V] V DD Overvoltage Protection Voltage [V] 18.2 18.0 17.8 17.6 17.4 16.6 16.4 16.2 16.0 17.2 -50 -25 0 25 50 75 100 15.8 Ambient Temperature : Ta [℃] -50 -25 0 25 50 75 100 Ambient Temperature : Ta [℃] (13) VDD Overvoltage Protection Hysteresis Width (14) VDD Overvoltage Protection Discharge Current vs. Ambient Temperature XC9401 XC9401 VENDIM=VDD, VISEN =GND VSINE=5.5V(Type A) or VNF=GND(Type B) CVDD =10μF(TMK316BJ106KL-T) VDD =19V, VENDIM=VDD, VISEN =GND VSINE=5.5V(Type A) or VNF=GND(Type B) C VDD =10μF(TMK316BJ106KL-T) 45 V DD Overvoltage Protection Discharge Current [mA] V DD Overvoltage Protection Hysteresis Width [V] 1.55 1.50 1.45 1.40 1.35 1.30 35 30 25 20 -50 -25 0 25 50 75 Ambient Temperature : Ta [℃] 14/19 40 100 -50 -25 0 25 50 Ambient Temperature : Ta [℃] 75 100 XC9401 Series ■ TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (15) GATE “H” ON Resistance vs. Ambient Temperature (16) GATE “L” ON Resistance vs. Ambient Temperature XC9401 7.0 6.0 5.0 4.0 3.0 GATE “L” ON Resistance [Ω] GATE “H” ON Resistance [Ω] XC9401 VDD =13V, VENDIM=VDD , IGATE=-10mA, VISEN =GND VSINE=5.5V(Type A) or VNF=GND(Type B) CVDD =10μF(TMK316BJ106KL-T) 2.0 VDD =13V, VENDIM=VDD , R1=300Ω, VISEN =1.0V VSINE=5.5V(Type A) or VNF=GND(Type B) C VDD =10μF(TMK316BJ106KL-T) 7.0 6.0 5.0 4.0 3.0 2.0 -50 -25 0 25 50 75 100 -50 -25 Ambient Temperature : Ta [℃] (17) OFF Time 0 25 vs. Ambient Temperature (18) Minimum ON Time 75 100 vs. Ambient Temperature XC9401 XC9401 VENDIM=VDD, VISEN =0.4V(Type A) or 0.45V(Type B) VSINE=1.0V(Type A) or VNF=GND(Type B) CVDD =10μF(TMK316BJ106KL-T) VENDIM=VDD, VISEN =1.0V VSINE=5.5V(Type A) or VNF=GND(Type B) C VDD =10μF(TMK316BJ106KL-T) 0.22 Minimum ON Time [μs] 7.0 OFF Time [μs] 50 Ambient Temperature : Ta [℃] 6.5 6.0 5.5 5.0 0.20 0.18 0.16 0.14 -50 -25 0 25 50 75 100 -50 Ambient Temperature : Ta [℃] -25 0 25 50 75 100 Ambient Temperature : Ta [℃] (19) Current Limit Voltage vs. Ambient Temperature XC9401 VENDIM=VDD, VISEN =GND VSINE=1.4V(Type A) or VNF=GND(Type B) CVDD =10μF(TMK316BJ106KL-T) Current Limit Voltage [V] 0.95 0.90 0.85 0.80 0.75 0.70 0.65 -50 -25 0 25 50 75 100 Ambient Temperature : Ta [℃] (20) PWM Dimmer Delay Time1 vs. Ambient Temperature (21) PWM Dimmer Delay Time2 vs. Ambient Temperature XC9401 0.40 PWM Dimmer Delay Time2 [μs] PWM Dimmer Delay Time1 [μs] XC9401 VDD =13V, VEN/DIM=2.2V to GND , VISEN =GND VSINE=5.5V(Type A) or VNF=GND(Type B) CVDD =10μF(TMK316BJ106KL-T) 0.35 0.30 0.25 0.20 VDD =13V, VEN/DIM=GND to 2.2V , VISEN =GND VSINE=5.5V(Type A) or VNF=GND(Type B) C VDD =10μF(TMK316BJ106KL-T) 180 160 140 120 100 -50 -25 0 25 50 75 Ambient Temperature : Ta [℃] 100 -50 -25 0 25 50 75 100 Ambient Temperature : Ta [℃] 15/19 XC9401Series ■ TYPICAL PERFORMANCE CHARACTERISTICS (Continued) (22) EN/DIM “H” Voltage vs. Ambient Temperature XC9401 XC9401 VDD =13V, VISEN =GND VSINE=5.5V(Type A) or VNF=GND(Type B) CVDD =10μF(TMK316BJ106KL-T) VDD =13V, VISEN =GND VSINE=5.5V(Type A) or VNF=GND(Type B) CVDD =10μF(TMK316BJ106KL-T) 1.60 1.50 1.40 1.30 0.90 0.80 0.70 0.60 1.20 0.50 -50 16/19 1.00 EN/DIM “L” Voltage [V] EN/DIM “H” Voltage [V] 1.70 (23) EN/DIM “L” Voltage vs. Ambient Temperature -25 0 25 50 75 Ambient Temperature : Ta [℃] 100 -50 -25 0 25 50 75 Ambient Temperature : Ta [℃] 100 XC9401 Series ■PACKAGING INFORMATION ●SOT-26 (unit: mm) 2.9±0.2 +0.1 0.4 -0.05 +0.1 0.4 -0.05 6 5 4 0~0.1 1234 2 1 (0.95) 3 (0.95) +0.1 0.15 -0.05 17/19 XC9401Series ■MARKING RULE ●SOT-26 6 5 ① ② ③ 1 2 4 ④ ⑤ 3 ① represents product series MARK PRODUCT SERIES 3 XC9401******-G ②③ represents product type MARK ② ③ PRODUCT SERIES A A XC9401A605**-G B A XC9401B605**-G ④⑤ represents production lot number 01~09, 0A~0Z, 11~9Z, A1~A9, AA~AZ, B1~ZZ in order. (G, I, J, O, Q, W excluded) *No character inversion used. 18/19 XC9401 Series 1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD. 19/19