Composite Transistors XN1507 Silicon NPN epitaxial planer transistor Unit: mm For high break down voltage and low noise amplification +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 2SD814 × 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 ■ Basic Part Number of Element 0.16 -0.06 +0.1 0.3 -0.05 0.95 +0.2 4 0.95 ● Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 2.9 -0.05 ● 5 1.9±0.1 ■ Features 1.5 -0.05 ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 150 V Rating Collector to emitter voltage of Emitter to base voltage element Collector current VCEO 150 V VEBO 5 V IC 50 mA Peak collector current ICP 100 mA Total power dissipation PT 300 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature ■ Electrical Characteristics Parameter *1 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 0.1 to 0.3 0.4±0.2 4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: 4O Internal Connection 5 Tr1 1 4 3 Tr2 2 (Ta=25˚C) Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = 100µA, IB = 0 150 V Emitter to base voltage VEBO IE = 10µA, IC = 0 5 V Collector cutoff current ICBO VCB = 100V, IE = 0 Forward current transfer ratio hFE VCE = 5V, IC = 10mA 90 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 5V, IC = 10mA 0.5 Collector to emitter saturation voltage VCE(sat) IC = 30mA, IB = 3mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 2.3 pF 1 µA 450 0.99 1 V Ratio between 2 elements 1 Composite Transistors XN1507 PT — Ta IC — VCE IC — VBE 120 500 120 100 300 200 100 60 0.6mA 0.4mA 40 0.2mA 20 0 80 120 160 Ambient temperature Ta (˚C) 2 3 1 Ta=75˚C 0.1 –25˚C 0.03 1 0.3 3 10 30 100 Collector current IC (mA) Cob — VCB Collector output capacitance Cob (pF) f=1MHz IE=0 Ta=25˚C 4 3 2 1 0 2 3 5 10 20 30 50 100 Collector to base voltage VCB (V) 2 6 8 10 12 0 0.4 0.8 1.2 400 Ta=75˚C 25˚C 200 –25˚C 100 0 0.1 0.3 1 3 2.0 fT — I E 500 300 1.6 Base to emitter voltage VBE (V) 200 10 30 Collector current IC (mA) 5 1 40 VCB=10V Ta=25˚C VCE=10V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 10 0.01 0.1 60 hFE — IC 30 25˚C 4 600 IC/IB=10 0.3 80 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 –25˚C 0 0 Transition frequency fT (MHz) 40 Ta=75˚C 20 0 0 25˚C 100 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 80 VCE=10V Collector current IC (mA) 400 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C 100 160 120 80 40 0 –1 –2 –3 –5 –10 –20 –30 –50 Emitter current IE (mA) –100