Z04 Series ® 4A TRIACS STANDARD MAIN FEATURES: A2 Symbol Value Unit IT(RMS) 4 A VDRM/VRRM 600 to 800 V IGT (Q1) 3 to 25 mA G A1 A1 A2 DESCRIPTION The Z04 series is suitable for general purpose AC switching applications. They can be found in applications such as touch light dimmers, fan controllers, HID lamp ignitors,... Different gate current sensitivities are available, allowing optimized performances when controlled directly from microcontrollers. G TO202-3 (Z04xxF) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I ²t Parameter Value Unit TI = 30°C 4 A Tamb = 25°C 1 F = 50 Hz t = 20 ms 20 F = 60 Hz t = 16.7 ms 21 RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing tp = 10 ms A 2.2 A² s dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 20 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 1.2 A Tj = 125°C 0.2 W - 40 to + 150 - 40 to + 125 °C PG(AV) Tstg Tj Average gate power dissipation Storage junction temperature range Operating junction temperature range July 2003 - Ed: 5 1/6 Z04 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT (1) VGT Test Conditions RL = 30 Ω VD = 12 V VGD VD = VDRM IH (2) IT = 50 mA IL IG = 1.2 IGT Quadrant RL = 3.3 kΩ Tj = 125°C Z04xx (dV/dt)c (2) 05 09 10 3 5 10 25 mA ALL MAX. ALL MAX. 1.3 V ALL MIN. 0.2 V MAX. 3 5 10 25 mA MAX. 6 10 15 25 mA 12 15 25 50 VD = 67 %VDRM gate open Tj = 110°C MIN. 10 20 100 200 V/µs Tj = 110°C MIN. 0.5 1 2 5 V/µs I - III - IV II dV/dt (2) Unit 02 (dI/dt)c = 1.8 A/ms STATIC CHARACTERISTICS Symbol Test Conditions VTM (2) ITM = 5.5 A Vto (2) Rd (2) IDRM tp = 380 µs Value Unit Tj = 25°C MAX. 2.0 V Threshold voltage Tj = 125°C MAX. 0.95 V Dynamic resistance Tj = 125°C MAX. 180 mΩ VDRM = VRRM Tj = 25°C 5 µA 0.5 mA IRRM Tj = 125°C MAX. Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 THERMAL RESISTANCES Symbol 2/6 Parameter Rth(j-l) Junction to lead (AC) Rth(j-a) Junction to ambient Value Unit 15 °C/W 100 °C/W Z04 Series PRODUCT SELECTOR Voltage Part Number 600 V Z0402MF 700 V X Z0402SF X Z0402NF X Z0405MF X Z0405SF X Z0405NF X Z0409MF X Z0409SF X Z0409NF X Z0410MF X Z0410SF X Z0410NF Sensitivity Type Package 3 mA Standard TO202-3 3 mA Standard TO202-3 3 mA Standard TO202-3 5 mA Standard TO202-3 5 mA Standard TO202-3 5 mA Standard TO202-3 10 mA Standard TO202-3 10 mA Standard TO202-3 10 mA Standard TO202-3 25 mA Standard TO202-3 25 mA Standard TO202-3 25 mA Standard TO202-3 800 V X ORDERING INFORMATION Z 04 02 M F Blank 0AA2 TRIAC SERIES VOLTAGE: M: 600V S: 700V N: 800V CURRENT: 4A PACKAGE: F: TO202-3 PACKING MODE: 0AA2: Tube 1AA2: Bulk SENSITIVITY: 02: 3mA 05: 5mA 09: 10mA 10: 25mA OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode Z04xxyF 0AA2 Z04xxyF 0.8 g 50 Tube Z04xxyF 1AA2 Z04xxyF 0.8 g 250 Bulk Note: xx = sensitivity, y = voltage 3/6 Z04 Series Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). Fig. 2: RMS on-state current versus ambient temperature (full cycle). P(W) IT(RMS)(A) 7 6 5 4 3 2 1 IT(RMS)(A) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration. 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Rth(j-a)=Rth(j-l) Rth(j-a)=100°C/W Tamb(°C) 0 25 50 75 100 125 Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C] K=[Zth(j-a)/Rth(j-a)] 2.5 1E+0 2.0 1E-1 IGT 1.5 IH & IL 1.0 1E-2 0.5 Tj(°C) tp(s) 1E-3 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 5: Surge peak on-state current versus number of cycles. 0.0 -40 -20 0 20 40 60 80 120 140 Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. ITSM (A), I²t (A²s) ITSM(A) 500 25 Tj initial=25°C 20 t=20ms 100 One cycle dI/dt limitation: 20A/µs ITSM Non repetitive Tj initial=25°C 15 10 Repetitive Tamb=25°C 10 5 0 100 I²t tp (ms) Number of cycles 1 4/6 10 100 1000 1 0.01 0.10 1.00 10.00 Z04 Series Fig. 7: values). On-state characteristics (maximum ITM(A) 20.0 10.0 Tj=Tj max. 1.0 Tj=25°C Tj max. Vto= 0.95 V Rd= 180 mW VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 Z0402 0.6 Z0405 0.4 0.2 (dV/dt)c (V/µs) 0.0 0.1 1.0 10.0 Z0410 Z0409 100.0 Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. (dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4 3 2 1 0 Tj (°C) 0 25 50 75 100 125 5/6 Z04 Series PACKAGE MECHANICAL DATA TO202-3 (Plastic) DIMENSIONS A REF. Millimeters Min. C O F D J P H N1 N M A C D F H J M N N1 O P Typ. Inches Max. Min. Typ. 10.1 7.3 10.5 Max. 0.398 0.287 0.413 1.5 0.51 1.5 4.5 0.059 0.020 0.059 0.177 5.3 2.54 0.209 0.100 1.4 0.7 0.055 0.028 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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