ZT91 MEDIUM POWER SILICON NPN PLANAR TRANSISTOR MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . General purpose NPN Transistor in a hermetic TO39 package. 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 5 .0 8 (0 .2 0 0 ) ty p . ! 2 .5 4 (0 .1 0 0 ) VCEO = 100V IC = 1A PT = 5W 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 4 5 ° TO39 PACKAGE Underside View Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO VCER IC PTOT Tstg,Tj Semelab plc. Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector – Emitter Sustaining Voltage Collector Current Dissipation @ Tamb = 25°C @ Case Temp. = 100°C @ Case Temp. = 25°C Derating linearly Storage and Operatuing Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 120V 100V 6V 100V 1A 1W 2.9W 5W 175°C –65 to 175°C Prelim.3/00 ZT91 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit VCEO(SUS) Collector – Emitter Sustaining Voltage IC = 10mA IB = 0 VCE(sat) Collector – Emitter Saturation Voltage IC = 200mA IB = 20mA 1.2 VBE(sat) Base – Emitter Saturation Voltage IC = 200mA IB = 20mA 1.5 ICBO Collector Cut-off Current VCB=VCE IE = 0 1 Tamb = 100°C 60 IEBO Emitter - Base Reverse Current VEB = 5V IC = 0 0.1 hFE DC Current Gain VCE = 10V IC = 10mA 30 VCE = 10V IC = 200mA 40 fT Gain Bandwidth Product VCE = 10V IC = 50mA NF Noise Figure Cob Output Capacitance VCB = 10V f=0 25 Cib Input Capacitance VEB = 1V f=0 100 Semelab plc. f = 10MHz VCE = 10V IC = 300mA f = 1KHz Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 100 60 120 V V — 250 MHz 6 dB pF Prelim.3/00