SEME-LAB ZT91

ZT91
MEDIUM POWER SILICON
NPN PLANAR TRANSISTOR
MECHANICAL DATA
Dimensions in mm (inches)
8 .8 9 (0 .3 5 )
9 .4 0 (0 .3 7 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
6 .1 0 (0 .2 4 0 )
6 .6 0 (0 .2 6 0 )
1 2 .7 0
(0 .5 0 0 )
m in .
General purpose NPN Transistor
in a hermetic TO39 package.
0 .8 9 m a x .
(0 .0 3 5 )
7 .7 5 (0 .3 0 5 )
8 .5 1 (0 .3 3 5 )
d ia .
5 .0 8 (0 .2 0 0 )
ty p .
!
2 .5 4
(0 .1 0 0 )
VCEO = 100V
IC = 1A
PT = 5W
0 .6 6 (0 .0 2 6 )
1 .1 4 (0 .0 4 5 )
0 .7 1 (0 .0 2 8 )
0 .8 6 (0 .0 3 4 )
4 5 °
TO39 PACKAGE
Underside View
Pin 1 = Emitter
Pin 2 = Base Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
VCER
IC
PTOT
Tstg,Tj
Semelab plc.
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector – Emitter Sustaining Voltage
Collector Current
Dissipation @ Tamb = 25°C
@ Case Temp. = 100°C
@ Case Temp. = 25°C
Derating linearly
Storage and Operatuing Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
120V
100V
6V
100V
1A
1W
2.9W
5W
175°C
–65 to 175°C
Prelim.3/00
ZT91
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
Typ.
Max. Unit
VCEO(SUS) Collector – Emitter Sustaining Voltage
IC = 10mA
IB = 0
VCE(sat)
Collector – Emitter Saturation Voltage
IC = 200mA
IB = 20mA
1.2
VBE(sat)
Base – Emitter Saturation Voltage
IC = 200mA
IB = 20mA
1.5
ICBO
Collector Cut-off Current
VCB=VCE
IE = 0
1
Tamb = 100°C
60
IEBO
Emitter - Base Reverse Current
VEB = 5V
IC = 0
0.1
hFE
DC Current Gain
VCE = 10V
IC = 10mA
30
VCE = 10V
IC = 200mA
40
fT
Gain Bandwidth Product
VCE = 10V
IC = 50mA
NF
Noise Figure
Cob
Output Capacitance
VCB = 10V
f=0
25
Cib
Input Capacitance
VEB = 1V
f=0
100
Semelab plc.
f = 10MHz
VCE = 10V
IC = 300mA
f = 1KHz
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
100
60
120
V
V
—
250
MHz
6
dB
pF
Prelim.3/00