ZETEX ZTX325

NPN SILICON PLANAR
RF TRANSISTOR
ZTX325
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Noise Figure
N
Intermodulation
Distortion
dim
Output Power
(at Tcase=25°C)*
PO
MIN.
TYP.
MAX. UNIT
CONDITIONS.
5.0
dB
f=500MHz, VCE=5V, IC=2mA,
RS=50Ω
dB
IC=14mA, VCE=6V, f=217MHz
V0=100mV, RL=37.5Ω,
f1=183MHz, f2=200MHz
-53
175
mW
VCE=13.5V, IC=22.5mA
Pin=25mW, f=500MHz
*It is essential that care be taken to reduce steady state current when no h.f. signal is applied.
TYPICAL CHARACTERISTICS
80
hFE - Normalised Gain
f T - (GHz)
3
f=400MHz
2
VCE=10V
VCE=5V
1
0
0.1
1
100
10
1000
IC - Collector Current (mA)
CRE - (pF)
2.0
1.5
1.0
0.5
0
10
20
10µ
100µ
hFE v IC
f=1MHz
20
30
VCE - (V)
CRE v VCE
3-162
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
2.5
V
Mean Collector Current (Averaged over 100µs)
IAV
25
mA
Collector Current
ICM
50
mA
Power Dissipation at Tamb=25°C
Ptot
350
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
40
1m
IC - Collector Current (A)
fT v IC
ISSUE 2 – MARCH 94
FEATURES
* High fT, 1.3GHz
* Low noise < 5dB at 500MHz
* Power output at 500MHz >175mW
VCE=10V
60
1µ
ZTX325
10m
100m
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
Collector-Emitter
Sustaining Voltage
VCEO(SUS)
15
V
IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=10µA, IC=0
Collector Cut-Off Current
ICBO
10
nA
VCB=15V, IE=0
Emitter Cut-Off Current
ICES
10
µA
VCE=15V, VBE=0
Static Forward Current
Transfer Ratio
hFE
25
20
Transition Frequency
fT
1.0
1.3
Capacitance, Collector
Depletion Layer
CTC
Capacitance, Emitter
Depletion Layer
CTE
Feedback Capacitance
-Cre
Feedback Time Constant
rbb’Cb’c
150
125
IC=2mA, VCE=5V, f=400MHz
IC=25mA, VCE=5V, f=400MHz
1.5
pF
VCB=10V, IE=Ie=0, f=1MHz
2.0
pF
VEB=0.5V, IC=Ic=0, f=1MHz
pF
VCE=5V, IC=2mA, f=1MHz
ps
VCB=5V, -IE=2mA, f=10.7MHz
12
3-161
IC=2mA, VCE=1V*
IC=25mA, VCE=1V*
GHz
GHz
0.85
2.0
CONDITIONS.
NPN SILICON PLANAR
RF TRANSISTOR
ZTX325
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Noise Figure
N
Intermodulation
Distortion
dim
Output Power
(at Tcase=25°C)*
PO
MIN.
TYP.
MAX. UNIT
CONDITIONS.
5.0
dB
f=500MHz, VCE=5V, IC=2mA,
RS=50Ω
dB
IC=14mA, VCE=6V, f=217MHz
V0=100mV, RL=37.5Ω,
f1=183MHz, f2=200MHz
-53
175
mW
VCE=13.5V, IC=22.5mA
Pin=25mW, f=500MHz
*It is essential that care be taken to reduce steady state current when no h.f. signal is applied.
TYPICAL CHARACTERISTICS
80
hFE - Normalised Gain
f T - (GHz)
3
f=400MHz
2
VCE=10V
VCE=5V
1
0
0.1
1
100
10
1000
IC - Collector Current (mA)
CRE - (pF)
2.0
1.5
1.0
0.5
0
10
20
10µ
100µ
hFE v IC
f=1MHz
20
30
VCE - (V)
CRE v VCE
3-162
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCEO
15
V
Emitter-Base Voltage
VEBO
2.5
V
Mean Collector Current (Averaged over 100µs)
IAV
25
mA
Collector Current
ICM
50
mA
Power Dissipation at Tamb=25°C
Ptot
350
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
40
1m
IC - Collector Current (A)
fT v IC
ISSUE 2 – MARCH 94
FEATURES
* High fT, 1.3GHz
* Low noise < 5dB at 500MHz
* Power output at 500MHz >175mW
VCE=10V
60
1µ
ZTX325
10m
100m
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
Collector-Emitter
Sustaining Voltage
VCEO(SUS)
15
V
IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO
5
V
IE=10µA, IC=0
Collector Cut-Off Current
ICBO
10
nA
VCB=15V, IE=0
Emitter Cut-Off Current
ICES
10
µA
VCE=15V, VBE=0
Static Forward Current
Transfer Ratio
hFE
25
20
Transition Frequency
fT
1.0
1.3
Capacitance, Collector
Depletion Layer
CTC
Capacitance, Emitter
Depletion Layer
CTE
Feedback Capacitance
-Cre
Feedback Time Constant
rbb’Cb’c
150
125
IC=2mA, VCE=5V, f=400MHz
IC=25mA, VCE=5V, f=400MHz
1.5
pF
VCB=10V, IE=Ie=0, f=1MHz
2.0
pF
VEB=0.5V, IC=Ic=0, f=1MHz
pF
VCE=5V, IC=2mA, f=1MHz
ps
VCB=5V, -IE=2mA, f=10.7MHz
12
3-161
IC=2mA, VCE=1V*
IC=25mA, VCE=1V*
GHz
GHz
0.85
2.0
CONDITIONS.