ZETEX ZTX500

ZTX500
PNP SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ZTX500
ISSUE 1 – MARCH 94
0.95
0.25
0.90
0.20
0.85
IC/IB=10
0.80
IC/IB=30
VCE(sat) - (Volts)
VBE(sat) - (Volts)
TYPICAL CHARACTERISTICS
C
B
0.15
0.05
0.70
10
0
30
40
50
60
ABSOLUTE MAXIMUM RATINGS.
10
20
IC - Collector Current (mA)
VBE(sat) v IC
50
30
40
50
60
IC - Collector Current (mA)
VCE(sat) v IC
IB=0.20mA
VCE=6V
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-25
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-500
mA
Power Dissipation at Tamb=25°C
Ptot
300
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +175
°C
0.18mA
200
0.16mA
0.14mA
0.12mA
30
20
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
IC=10mA
150
0.10mA
hFE %
IC - (mA)
40
0.08mA
IC=50mA
100
IC=100µA
0.06mA
10
50
0.04mA
0.02mA
0
0
2
4
6
8
0
10
150
-100
-50
0
50
Ambient Temperature (°C)
VCE v IC
hFE v Ambient Temperature
VCE(sat) - (Volts)
hFE %
100
50
0.1
1
150
0.14
IC=50mA
IB=5mA
0.12
0
100
VCE - (V)
-55°C
+25°C
+100°C
10
100
1000
0.10
0.08
IC=10mA
IB=1mA
0.06
0.04
-100
IC - Collector Current (mA)
-50
0
50
100
Ambient Temperature (°C)
hFE v IC
150
PARAMETER
SYMBOL
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Sustaining Voltage
MIN. TYP.
UNIT
CONDITIONS.
-25
V
IC=-10µ A
VCEO(sus)
-25
V
IC=-5mA
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-10µ A
Collector Cut-Off
Current
ICBO
-0.2
µA
VCB=-25V
Emitter Cut-Off Current IEBO
-0.2
µA
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.35
V
IC=-50mA, IB=-5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.65
-1
V
IC=-10mA, IB=-1mA*
Static Forward Current hFE
Transfer Ratio
50
300
Transition Frequency
fT
150
Output Capacitance
Cobo
MAX.
Noise Figure
N
6
7
VCE(sat) v Ambient Temperature
3-185
E
E-Line
TO92 Compatible
IC/IB=10
0.10
0.75
20
IC/IB=30
3-184
IC=-10mA, VCE=-6V*
MHz
IC=-10mA, VCE=-6V
f=100MHz
pF
VCB=-6V, f=1MHz
dB
IC=-100µ A, RS=1.5KΩ
f=1KHz
ZTX500
PNP SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ZTX500
ISSUE 1 – MARCH 94
0.95
0.25
0.90
0.20
0.85
IC/IB=10
0.80
IC/IB=30
VCE(sat) - (Volts)
VBE(sat) - (Volts)
TYPICAL CHARACTERISTICS
C
B
0.15
0.05
0.70
10
0
30
40
50
60
ABSOLUTE MAXIMUM RATINGS.
10
20
IC - Collector Current (mA)
VBE(sat) v IC
50
30
40
50
60
IC - Collector Current (mA)
VCE(sat) v IC
IB=0.20mA
VCE=6V
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-25
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-500
mA
Power Dissipation at Tamb=25°C
Ptot
300
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +175
°C
0.18mA
200
0.16mA
0.14mA
0.12mA
30
20
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
IC=10mA
150
0.10mA
hFE %
IC - (mA)
40
0.08mA
IC=50mA
100
IC=100µA
0.06mA
10
50
0.04mA
0.02mA
0
0
2
4
6
8
0
10
150
-100
-50
0
50
Ambient Temperature (°C)
VCE v IC
hFE v Ambient Temperature
VCE(sat) - (Volts)
hFE %
100
50
0.1
1
150
0.14
IC=50mA
IB=5mA
0.12
0
100
VCE - (V)
-55°C
+25°C
+100°C
10
100
1000
0.10
0.08
IC=10mA
IB=1mA
0.06
0.04
-100
IC - Collector Current (mA)
-50
0
50
100
Ambient Temperature (°C)
hFE v IC
150
PARAMETER
SYMBOL
Collector-Base
Breakdown Voltage
V(BR)CBO
Collector-Emitter
Sustaining Voltage
MIN. TYP.
UNIT
CONDITIONS.
-25
V
IC=-10µ A
VCEO(sus)
-25
V
IC=-5mA
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
V
IE=-10µ A
Collector Cut-Off
Current
ICBO
-0.2
µA
VCB=-25V
Emitter Cut-Off Current IEBO
-0.2
µA
VEB=-4V
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.35
V
IC=-50mA, IB=-5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
-0.65
-1
V
IC=-10mA, IB=-1mA*
Static Forward Current hFE
Transfer Ratio
50
300
Transition Frequency
fT
150
Output Capacitance
Cobo
MAX.
Noise Figure
N
6
7
VCE(sat) v Ambient Temperature
3-185
E
E-Line
TO92 Compatible
IC/IB=10
0.10
0.75
20
IC/IB=30
3-184
IC=-10mA, VCE=-6V*
MHz
IC=-10mA, VCE=-6V
f=100MHz
pF
VCB=-6V, f=1MHz
dB
IC=-100µ A, RS=1.5KΩ
f=1KHz