NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS ZTX320 ZTX321 ZTX322 ZTX323 ISSUE 3 APRIL 94 FEATURES * 15 Volt VCEO * fT=600 MHz APPLICATIONS * VHF/UHF operation TYPICAL CHARACTERISTICS 0.4 PD - Power Dissipation (Watts) 1000 fT - MHz 800 VCE=10V f=100MHz 600 400 200 0 0 5 10 15 20 0.3 C B 0.2 0.1 -20 0 20 60 100 140 IC (mA) T - Temperature (°C) fT v IC Derating Curve 180 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 0 -60 25 ZTX320 ZTX321 ZTX322 ZTX323 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 3 V Base Current IB 100 mA Continuous Collector Current IC 500 mA 300 mW -55 to +175 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MAX. UNIT CONDITIONS. IC=10µA, IE=0 Collector-Base Breakdown Voltage V(BR)CBO 30 V Collector-Emitter Sustaining Voltage VCEO(SUS) 15 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 3 V IE=10µA, IC=0 Collector Cut-Off Current ICBO 0.01 µA VCB=15V, IE=0 Emitter Cut-Off Current IEBO 0.2 µA VEB=2V, IC=0 Collector-Emitter ZTX320, ZTX322 Saturation Voltage ZTX323 ZTX321 VCE(sat) 0.4 0.4 0.4 V V V IC=10mA, IB=1mA IC=10mA, IB=1mA IC=3mA, IB=0.3mA Base-Emitter ZTX320, ZTX322 Saturation Voltage ZTX323 ZTX321 VBE(sat) 1.0 1.0 1.0 V V V IC=10mA, IB=1mA IC=10mA, IB=1mA IC=3mA, IB=0.3mA Static Forward Current Transfer Ratio 3-160 MIN. ZTX320, ZTX321 ZTX322 ZTX323 hFE 20 20 100 IC=3mA, VCE=1V IC=3mA, VCE=1V IC=3mA, VCE=1V 300 150 300 Output Capacitance Cobo 1.7 pF VCB=10V, f=1MHz Input Capacitance Cibo 1.6 pF VEB=0.5V, f=1MHz Transition Frequency at f=100MHz fT MHz MHz IC=4mA, VCE=10V IC=30mA, VCE=10V Noise Figure N dB IE=1mA, VCE=6V RS=400Ω, f=60MHz Power Gain gpe dB IC=6mA, VCB=12V f=200MHz 600 400 6 typical 15 3-159 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS ZTX320 ZTX321 ZTX322 ZTX323 ISSUE 3 APRIL 94 FEATURES * 15 Volt VCEO * fT=600 MHz APPLICATIONS * VHF/UHF operation TYPICAL CHARACTERISTICS 0.4 PD - Power Dissipation (Watts) 1000 fT - MHz 800 VCE=10V f=100MHz 600 400 200 0 0 5 10 15 20 0.3 C B 0.2 0.1 -20 0 20 60 100 140 IC (mA) T - Temperature (°C) fT v IC Derating Curve 180 E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 0 -60 25 ZTX320 ZTX321 ZTX322 ZTX323 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 3 V Base Current IB 100 mA Continuous Collector Current IC 500 mA 300 mW -55 to +175 °C Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MAX. UNIT CONDITIONS. IC=10µA, IE=0 Collector-Base Breakdown Voltage V(BR)CBO 30 V Collector-Emitter Sustaining Voltage VCEO(SUS) 15 V IC=10mA, IB=0 Emitter-Base Breakdown Voltage V(BR)EBO 3 V IE=10µA, IC=0 Collector Cut-Off Current ICBO 0.01 µA VCB=15V, IE=0 Emitter Cut-Off Current IEBO 0.2 µA VEB=2V, IC=0 Collector-Emitter ZTX320, ZTX322 Saturation Voltage ZTX323 ZTX321 VCE(sat) 0.4 0.4 0.4 V V V IC=10mA, IB=1mA IC=10mA, IB=1mA IC=3mA, IB=0.3mA Base-Emitter ZTX320, ZTX322 Saturation Voltage ZTX323 ZTX321 VBE(sat) 1.0 1.0 1.0 V V V IC=10mA, IB=1mA IC=10mA, IB=1mA IC=3mA, IB=0.3mA Static Forward Current Transfer Ratio 3-160 MIN. ZTX320, ZTX321 ZTX322 ZTX323 hFE 20 20 100 IC=3mA, VCE=1V IC=3mA, VCE=1V IC=3mA, VCE=1V 300 150 300 Output Capacitance Cobo 1.7 pF VCB=10V, f=1MHz Input Capacitance Cibo 1.6 pF VEB=0.5V, f=1MHz Transition Frequency at f=100MHz fT MHz MHz IC=4mA, VCE=10V IC=30mA, VCE=10V Noise Figure N dB IE=1mA, VCE=6V RS=400Ω, f=60MHz Power Gain gpe dB IC=6mA, VCB=12V f=200MHz 600 400 6 typical 15 3-159