DIODES ZTX694B

ZTX694B
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL
MIN.
Transition Frequency
fT
130
Input Capacitance
Cibo
Output Capacitance
Switching Times
TYP.
MAX.
UNIT
CONDITIONS.
MHz
IC=50mA, VCE=5V
f=50MHz
200
pF
VEB=0.5V, f=1MHz
Cobo
9
pF
VCB=10V, f=1MHz
ton
toff
80
2900
ns
ns
IC=100mA, IB!=10mA
IB2=10mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
Rth(j-amb)1
Rth(j-amb)2†
Rth(j-case)
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
UNIT
°C/W
°C/W
°C/W
175
116
70
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
V
Collector-Base Voltage
VCBO
120
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5
V
1
A
Peak Pulse Current
ICM
Continuous Collector Current
IC
0.5
A
Practical Power Dissipation*
Ptotp
1.5
W
Ptot
1
5.7
W
mW/°C
-55 to +200
°C
Power Dissipation
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX694B
ISSUE 1 – APRIl 94
FEATURES
* 120 Volt VCEO
* Gain of 400 at IC=200mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Relay / solenoid driver
* Battery powered circuits
* Motor drivers
Tamb=25°C
derate above 25°C
Tj:Tstg
Operating and Storage Temperature Range
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
200
Thermal Resistance (°C/W)
Max Power Dissipation - (Watts)
2.5
2.0
C
1.5
Am
1.0
0.5
0
-40 -20
0
20 40
bie
as
e
nt t
te
m
em
pe
ra
per
tu
re
at u
re
60 80 100 120 140 160 180 200
D=1 (D.C.)
t1
D=t1/tP
tP
100
D=0.5
D=0.2
D=0.1
Single Pulse
0
0.0001
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-245
PARAMETER
SYMBOL
MIN.
Collector-Base Breakdown
Voltage
V(BR)CBO
Collector-Emitter Breakdown
Voltage
TYP.
MAX.
UNIT
CONDITIONS.
120
V
IC=100µA
V(BR)CEO
120
V
IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
5
V
IE=100µA
Collector Cut-Off Current
ICBO
0.1
µA
VCB=100V
Emitter Cut-Off Current
IEBO
0.1
µA
VEB=4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.25
0.5
V
V
IC=100mA, IB=0.5mA*
IC=400mA, IB=5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=1A, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.9
V
IC=1A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
500
400
150
3-244
IC=100mA, VCE=2V*
IC=200mA, VCE=2V*
IC=400mA, VCE=2V*
ZTX694B
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER
SYMBOL
MIN.
Transition Frequency
fT
130
Input Capacitance
Cibo
Output Capacitance
Switching Times
TYP.
MAX.
UNIT
CONDITIONS.
MHz
IC=50mA, VCE=5V
f=50MHz
200
pF
VEB=0.5V, f=1MHz
Cobo
9
pF
VCB=10V, f=1MHz
ton
toff
80
2900
ns
ns
IC=100mA, IB!=10mA
IB2=10mA, VCC=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
Rth(j-amb)1
Rth(j-amb)2†
Rth(j-case)
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
UNIT
°C/W
°C/W
°C/W
175
116
70
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
V
Collector-Base Voltage
VCBO
120
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5
V
1
A
Peak Pulse Current
ICM
Continuous Collector Current
IC
0.5
A
Practical Power Dissipation*
Ptotp
1.5
W
Ptot
1
5.7
W
mW/°C
-55 to +200
°C
Power Dissipation
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX694B
ISSUE 1 – APRIl 94
FEATURES
* 120 Volt VCEO
* Gain of 400 at IC=200mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Relay / solenoid driver
* Battery powered circuits
* Motor drivers
Tamb=25°C
derate above 25°C
Tj:Tstg
Operating and Storage Temperature Range
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
200
Thermal Resistance (°C/W)
Max Power Dissipation - (Watts)
2.5
2.0
C
1.5
Am
1.0
0.5
0
-40 -20
0
20 40
bie
as
e
nt t
te
m
em
pe
ra
per
tu
re
at u
re
60 80 100 120 140 160 180 200
D=1 (D.C.)
t1
D=t1/tP
tP
100
D=0.5
D=0.2
D=0.1
Single Pulse
0
0.0001
0.001
0.01
0.1
1
10
100
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-245
PARAMETER
SYMBOL
MIN.
Collector-Base Breakdown
Voltage
V(BR)CBO
Collector-Emitter Breakdown
Voltage
TYP.
MAX.
UNIT
CONDITIONS.
120
V
IC=100µA
V(BR)CEO
120
V
IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
5
V
IE=100µA
Collector Cut-Off Current
ICBO
0.1
µA
VCB=100V
Emitter Cut-Off Current
IEBO
0.1
µA
VEB=4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.25
0.5
V
V
IC=100mA, IB=0.5mA*
IC=400mA, IB=5mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=1A, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.9
V
IC=1A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
500
400
150
3-244
IC=100mA, VCE=2V*
IC=200mA, VCE=2V*
IC=400mA, VCE=2V*
ZTX694B
TYPICAL CHARACTERISTICS
IC/IB=200
IC/IB=100
IC/IB=10
Tamb=25°C
0.6
0.4
0.2
0.01
0.1
1
0.4
0
10
0.01
1
10
VCE(sat) v IC
VCE(sat) v IC
VCE=2V
1K
0.8
0.6
500
0.4
0.2
VBE(sat) - (Volts)
1.0
-55°C
+25°C
+100°C
+175°C
1.6
1.5K
1.2
1.4
IC/IB=100
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.01
0.1
10
1
0
0.01
1.4
hFE v IC
VBE(sat) v IC
-55°C
+25°C
+100°C
+175°C
VCE=2V
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1
IC - Collector Current (Amps)
IC - Collector Current (Amps)
1.6
0.1
IC - Collector Current (Amps)
0.01
0.1
1
10
10
Single Pulse Test at Tamb=25°C
1
VBE - (Volts)
0.1
IC - Collector Current (Amps)
hFE - Typical Gain
hFE - Normalised Gain
0.6
IC - Collector Current (Amps)
+100°C
+25°C
-55°C
1.4
IC/IB=100
0.2
0
1.6
-55°C
+25°C
+100°C
+175°C
0.8
VCE(sat) - (Volts)
VCE(sat) - (Volts)
0.8
0.1
0.01
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
1
IC - Collector Current (Amps)
10
100
VCE - Collector Voltage (Volts)
VBE(on) v IC
Safe Operating Area
3-246
1000