ZTX752 ZTX753 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). ZTX752 ZTX753 PARAMETER SYMBOL Transition Frequency fT Switching Times ton 40 40 ns toff 600 600 ns Output Capacitance MIN. TYP. 100 MAX. MIN. TYP. 140 100 140 UNIT CONDITIONS. MHz 30 Cobo MAX. 30 IC=-100mA, VCE=-5V f=100MHz pF VCB=10V f=1MHz THERMAL CHARACTERISTICS SYMBOL MAX. UNIT 175 116 70 °C/W °C/W °C/W Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL UNIT V Collector-Base Voltage VCBO -100 -120 VCEO -80 -100 Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Ptot 1 5.7 W mW/°C -55 to +200 °C Power Dissipation at Tamb=25°C derate above 25°C Tj:Tstg Operating and Storage Temperature Range V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER ZTX752 ZTX753 SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS. -120 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -80 -100 V IC=-10mA* V(BR)EBO -5 -5 V IE=-100µA D=0.5 Emitter-Base Breakdown Voltage Collector Cut-Off Current ICBO D=0.2 -10 µA µA µA µA VCB=-80V VCB=-100V VCB=-80V,Tamb=100°C VCB=-100V,Tamb=100°C -0.1 -0.1 µA VEB=-4V Collector-Emitter VCE(sat) Saturation Voltage -0.17 -0.3 -0.30 -0.5 -0.17 -0.3 -0.30 -0.5 V V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* Base-Emitter VBE(sat) Saturation Voltage -0.9 -1.25 -0.9 -1.25 V IC=-1A, IB=-100mA* Base-Emitter Turn-On Voltage -0.8 -1 -0.8 -1 IC=-1A, VCE=-2V* D=t1/tP -0.1 -0.1 -10 D=0.1 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-261 ZTX753 Collector-Emitter Voltage Single Pulse 0 0.0001 ZTX752 -100 tP 100 E V(BR)CBO D=1 (D.C.) t1 C B Collector-Base Breakdown Voltage 200 Thermal Resistance (°C/W) Max Power Dissi ation - (Watts) 2.5 ISSUE 2 JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt IC=-500mA, VCC=-10V IB1=IB2=-50mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PARAMETER ZTX752 ZTX753 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Emitter Cut-Off Current IEBO VBE(on) 3-260 V ZTX752 ZTX753 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). ZTX752 ZTX753 PARAMETER SYMBOL Transition Frequency fT Switching Times ton 40 40 ns toff 600 600 ns Output Capacitance MIN. TYP. 100 MAX. MIN. TYP. 140 100 140 UNIT CONDITIONS. MHz 30 Cobo MAX. 30 IC=-100mA, VCE=-5V f=100MHz pF VCB=10V f=1MHz THERMAL CHARACTERISTICS SYMBOL MAX. UNIT 175 116 70 °C/W °C/W °C/W Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.0 C 1.5 Am 1.0 0.5 0 -40 -20 0 20 40 bie as e nt t te m em pe ra per tu re at u re 60 80 100 120 140 160 180 200 E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL UNIT V Collector-Base Voltage VCBO -100 -120 VCEO -80 -100 Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -6 A Continuous Collector Current IC -2 A Ptot 1 5.7 W mW/°C -55 to +200 °C Power Dissipation at Tamb=25°C derate above 25°C Tj:Tstg Operating and Storage Temperature Range V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER ZTX752 ZTX753 SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS. -120 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -80 -100 V IC=-10mA* V(BR)EBO -5 -5 V IE=-100µA D=0.5 Emitter-Base Breakdown Voltage Collector Cut-Off Current ICBO D=0.2 -10 µA µA µA µA VCB=-80V VCB=-100V VCB=-80V,Tamb=100°C VCB=-100V,Tamb=100°C -0.1 -0.1 µA VEB=-4V Collector-Emitter VCE(sat) Saturation Voltage -0.17 -0.3 -0.30 -0.5 -0.17 -0.3 -0.30 -0.5 V V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* Base-Emitter VBE(sat) Saturation Voltage -0.9 -1.25 -0.9 -1.25 V IC=-1A, IB=-100mA* Base-Emitter Turn-On Voltage -0.8 -1 -0.8 -1 IC=-1A, VCE=-2V* D=t1/tP -0.1 -0.1 -10 D=0.1 0.001 0.01 0.1 1 10 100 T -Temperature (°C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-261 ZTX753 Collector-Emitter Voltage Single Pulse 0 0.0001 ZTX752 -100 tP 100 E V(BR)CBO D=1 (D.C.) t1 C B Collector-Base Breakdown Voltage 200 Thermal Resistance (°C/W) Max Power Dissi ation - (Watts) 2.5 ISSUE 2 JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt IC=-500mA, VCC=-10V IB1=IB2=-50mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PARAMETER ZTX752 ZTX753 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS Emitter Cut-Off Current IEBO VBE(on) 3-260 V ZTX752 ZTX753 TYPICAL CHARACTERISTICS 0.6 0.4 Switching time VCE(sat) - (Volts) 0.5 IC/IB=10 0.3 0.2 0.1 0 0.0001 0.001 0.01 0.1 1 10 td tr tf ns 140 IB1=IB2=IC/10 ts ns 1400 120 1200 100 1000 80 800 60 600 40 400 20 200 0 0 td ts tf tr 0.1 IC - Collector Current (Amps) 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.4 VBE(sat) - (Volts) hFE - Gain 225 175 VCE=2V 125 1.2 1.0 IC/IB=10 0.8 75 0.6 0 0.01 0.1 1 10 0.0001 0.01 0.1 1 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC IC - Collector Current (Amps) 1.2 1.0 VCE=2V 0.8 0.6 0.4 0.0001 0.001 0.01 0.1 1 10 Single Pulse Test at Tamb=25°C 10 VBE - (Volts) 0.001 IC - Collector Current (Amps) 1 0.1 D.C. 1s 100ms 10ms 1.0ms 100µs ZTX752 ZTX753 10 0.01 0.1 1 10 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-262 100