SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4106F ZVN4106F ISSUE 2 – DECEMBER 1995 ID - Drain Current (A) 4 VGS=20V 3 16V 14V 12V 2 10V 9V 8V 1 7V 6V 5V 4V 0 0 4 2 6 10 8 VDS - Drain Source Voltage (V) RDS(on) - Drain Source On Resistance (Ω) PARMARKING DETAIL - MZ VGS=3.5V 8V 10 gfs - Transconductance (S) Normalised RDS(on) and VGS(th) 1.2 VGS(th) 0 -50 0 50 14V 100 1 0.01 0.1 VDS=10V 100 0 0.5 0 Ciss 20 Coss Crss 0 45 1.5 1.0 2.0 Transconductance v Drain Current VGS - Gate Source Voltage (V) C - Capacitance (pF) 40 60 SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C ID 0.2 A Pulsed Drain Current I DM 3 A Gate-Source Voltage V GS ± 20 V Max Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range Tj :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). ID(on) - Drain Current (A) 60 30 10 200 Normalised RDS(on) & VGS(th) v Temperature 15 1 ID - Drain Current (A) 150 80 PARAMETER 20V Tj - Junction Temperature ( °C) 0 ABSOLUTE MAXIMUM RATINGS. 10V 300 0.6 G 6V On-Resistance v Drain Current RDS(on) ID=0.5A 4V 5V Saturation Characteristics 1.8 S D 100 16 ID=0.5A VDD=20V 40V PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 1.3 12 V I D=1mA, V GS=0V 3 V I D =1mA, V DS= V GS Gate-Body Leakage I GSS 100 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 10 50 µA µA V DS=60V, V GS=0 V DS=48V, V GS=0V, T=125°C (2) A V DS=25V, V GS=10V Ω Ω V GS=10V, I D=500mA V GS=5V, I D=200mA mS V DS=25V, I D=250mA On-State Drain Current(1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance(1)(2 g fs ) 50V MAX. UNIT CONDITIONS. 1 2.5 5 150 Input Capacitance (2) C iss 35 pF 8 Common Source Output Capacitance (2) C oss 25 pF 4 Reverse Transfer Capacitance (2) C rss 8 pF Turn-On Delay Time (2)(3) T d(on) 5 ns Rise Time (2)(3) Tr 7 ns Turn-Off Delay Time (2)(3) T d(off) 6 ns Fall Time (2)(3) Tf 8 ns 0 0 0.6 1.2 1.8 VDS - Drain Source Voltage (V) Q - Charge (nC) Capacitance v Drain Source Voltage Gate Source Voltage v Gate Charge V DS=25V, V GS=0V, f=1MHz V DD ≈25V, I D=150mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 500Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 400 3 - 399 SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4106F ZVN4106F ISSUE 2 – DECEMBER 1995 ID - Drain Current (A) 4 VGS=20V 3 16V 14V 12V 2 10V 9V 8V 1 7V 6V 5V 4V 0 0 4 2 6 10 8 VDS - Drain Source Voltage (V) RDS(on) - Drain Source On Resistance (Ω) PARMARKING DETAIL - MZ VGS=3.5V 8V 10 gfs - Transconductance (S) Normalised RDS(on) and VGS(th) 1.2 VGS(th) 0 -50 0 50 14V 100 1 0.01 0.1 VDS=10V 100 0 0.5 0 Ciss 20 Coss Crss 0 45 1.5 1.0 2.0 Transconductance v Drain Current VGS - Gate Source Voltage (V) C - Capacitance (pF) 40 60 SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C ID 0.2 A Pulsed Drain Current I DM 3 A Gate-Source Voltage V GS ± 20 V Max Power Dissipation at T amb=25°C P tot 330 mW Operating and Storage Temperature Range Tj :T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). ID(on) - Drain Current (A) 60 30 10 200 Normalised RDS(on) & VGS(th) v Temperature 15 1 ID - Drain Current (A) 150 80 PARAMETER 20V Tj - Junction Temperature ( °C) 0 ABSOLUTE MAXIMUM RATINGS. 10V 300 0.6 G 6V On-Resistance v Drain Current RDS(on) ID=0.5A 4V 5V Saturation Characteristics 1.8 S D 100 16 ID=0.5A VDD=20V 40V PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage V GS(th) 1.3 12 V I D=1mA, V GS=0V 3 V I D =1mA, V DS= V GS Gate-Body Leakage I GSS 100 nA V GS=± 20V, V DS=0V Zero Gate Voltage Drain Current I DSS 10 50 µA µA V DS=60V, V GS=0 V DS=48V, V GS=0V, T=125°C (2) A V DS=25V, V GS=10V Ω Ω V GS=10V, I D=500mA V GS=5V, I D=200mA mS V DS=25V, I D=250mA On-State Drain Current(1) I D(on) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance(1)(2 g fs ) 50V MAX. UNIT CONDITIONS. 1 2.5 5 150 Input Capacitance (2) C iss 35 pF 8 Common Source Output Capacitance (2) C oss 25 pF 4 Reverse Transfer Capacitance (2) C rss 8 pF Turn-On Delay Time (2)(3) T d(on) 5 ns Rise Time (2)(3) Tr 7 ns Turn-Off Delay Time (2)(3) T d(off) 6 ns Fall Time (2)(3) Tf 8 ns 0 0 0.6 1.2 1.8 VDS - Drain Source Voltage (V) Q - Charge (nC) Capacitance v Drain Source Voltage Gate Source Voltage v Gate Charge V DS=25V, V GS=0V, f=1MHz V DD ≈25V, I D=150mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 500Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 400 3 - 399