P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS D G D S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS -200 V Continuous Drain Current at Tamb=25°C ID -120 mA IDM -1.2 A VGS ± 20 V 700 mW -55 to +150 °C PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -200 V Continuous Drain Current at Tamb=25°C ID -120 mA Pulsed Drain Current IDM -1.2 A Pulsed Drain Current ± 20 V Gate Source Voltage 700 mW Power Dissipation at Tamb=25°C Ptot -55 to +150 °C Operating and Storage Temperature Range Tj:Tstg Gate Source Voltage VGS Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -200 Gate-Source Threshold Voltage VGS(th) -1.5 Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current(1) ID(on) MAX. UNIT CONDITIONS. PARAMETER SYMBOL MIN. BVDSS -200 VGS(th) -1.5 V ID=-1mA, VGS=0V Drain-Source Breakdown Voltage -3.5 V ID=-1mA, VDS= VGS Gate-Source Threshold Voltage 20 nA VGS=± 20V, VDS=0V Gate-Body Leakage VDS=-200 V, VGS=0 VDS=-160 V, VGS=0V, T=125°C(2) Zero Gate Voltage Drain Current ID=-1mA, VGS=0V -3.5 V ID=-1mA, VDS= VGS IGSS 20 nA VGS=± 20V, VDS=0V IDSS -10 -100 µA µA VDS=-200 V, VGS=0 VDS=-160 V, VGS=0V, T=125°C(2) mA VDS=-25 V, VGS=-10V Ω VGS=-10V,ID=-150mA mS VDS=-25V,ID=-150mA µA µA mA VDS=-25 V, VGS=-10V On-State Drain Current(1) ID(on) 25 Ω VGS=-10V,ID=-150mA Static Drain-Source On-State Resistance (1) RDS(on) mS VDS=-25V,ID=-150mA Forward Transconductance (1)(2) gfs 50 Forward Transconductance (1)(2) gfs Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 25 pF Reverse Transfer Capacitance (2) Crss 7 pF VDS=-25V, VGS=0V, f=1MHz -300 25 50 Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 25 pF Reverse Transfer Capacitance (2) Crss 7 pF Turn-On Delay Time (2)(3) td(on) 7 ns Turn-On Delay Time (2)(3) td(on) 7 ns Rise Time (2)(3) tr 15 ns Rise Time (2)(3) tr 15 ns Turn-Off Delay Time (2)(3) t d(off) 12 ns Turn-Off Delay Time (2)(3) td(off) 12 ns Fall Time (2)(3) tf 15 ns Fall Time (2)(3) tf 15 ns VDD ≈ -25V, ID=-150mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-428 3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator UNIT MAX. UNIT CONDITIONS. V -10 -100 -300 Static Drain-Source On-State RDS(on) Resistance (1) VALUE ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER S ( VDS=-25V, VGS=0V, f=1MHz VDD ≈ -25V, ID=-150mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-425 ( 3 ZVP2120A ZVP2120A TYPICAL CHARACTERISTICS -4.5V -4V 0 -3.5V 0 -20 -40 -60 -80 -100 -0.2 -4.5V -0.1 -3.5V 0 0 VDS - Drain Source Voltage (Volts) -16 -14 -12 -10 -8 -6 ID= -300mA -4 -200mA -2 -100mA -50mA 0 -6 -8 -10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) -20 -4 -6 -8 140 120 100 80 60 40 20 0 0 -10 -0.2 -0.6 -0.4 -10V -0.2 80 Ciss 60 40 20 Crss -4 -6 -8 -10 0 -10 -20 -30 -40 -50 VDS-Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts) 10 -1 -10 Normalised RDS(on) and VGS(th) ID= -300mA -200mA -I00mA -50mA -20 VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage 2.4 2.2 n) (o DS 1.8 1.6 Re ce ur So ain Dr 1.4 1.2 eR nc ta sis Gate Thresh old 0.8 VGS=-10V ID=-0.1A VGS=VDS ID=-1mA 1.0 Voltage VGS (th ) 0.6 -40 -20 0 20 40 60 80 100 120 140 160 180 T-Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3-426 20 0 0 -2 -4 -6 -8 -10 0 ID=- 0.4A -2 VDS= -50V -100V -180V -4 -6 -8 -10 -12 -14 -16 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Gate charge v gate-source voltage 2.6 2.0 40 Q-Charge (nC) Capacitance v drain-source voltage Transfer Characteristics 50 80 60 Transconductance v gate-source voltage 100 0 -2 VDS=-25V 100 VGS-Gate Source Voltage (Volts) Coss 0 140 120 -0.8 Transconductance v drain current -0.6 VGS-Gate Source Voltage (Volts) 100 -0.4 160 ID- Drain Current (Amps) VDS= -25V Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance (Ω) -4 Saturation Characteristics -18 -2 -2 VDS=-25V 160 VDS - Drain Source Voltage (Volts) Output Characteristics 0 -4V 200 180 gfs-Transconductance (mS) -5V -0.2 -5V 200 180 VGS-Gate Source Voltage (Volts) -6V -0.4 -0.3 C-Capacitance (pF) -0.6 VGS= -10V -8V -7V -6V -0.4 gfs-Transconductance (mS) VGS= -10V -8V -7V ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 3-427 ZVP2120A ZVP2120A TYPICAL CHARACTERISTICS -4.5V -4V 0 -3.5V 0 -20 -40 -60 -80 -100 -0.2 -4.5V -0.1 -3.5V 0 0 VDS - Drain Source Voltage (Volts) -16 -14 -12 -10 -8 -6 ID= -300mA -4 -200mA -2 -100mA -50mA 0 -6 -8 -10 ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) -20 -4 -6 -8 140 120 100 80 60 40 20 0 0 -10 -0.2 -0.6 -0.4 -10V -0.2 80 Ciss 60 40 20 Crss -4 -6 -8 -10 0 -10 -20 -30 -40 -50 VDS-Drain Source Voltage (Volts) VGS-Gate Source Voltage (Volts) 10 -1 -10 Normalised RDS(on) and VGS(th) ID= -300mA -200mA -I00mA -50mA -20 VGS-Gate Source Voltage (Volts) On-resistance vs gate-source voltage 2.4 2.2 n) (o DS 1.8 1.6 Re ce ur So ain Dr 1.4 1.2 eR nc ta sis Gate Thresh old 0.8 VGS=-10V ID=-0.1A VGS=VDS ID=-1mA 1.0 Voltage VGS (th ) 0.6 -40 -20 0 20 40 60 80 100 120 140 160 180 T-Temperature (°C) Normalised RDS(on) and VGS(th) vs Temperature 3-426 20 0 0 -2 -4 -6 -8 -10 0 ID=- 0.4A -2 VDS= -50V -100V -180V -4 -6 -8 -10 -12 -14 -16 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Gate charge v gate-source voltage 2.6 2.0 40 Q-Charge (nC) Capacitance v drain-source voltage Transfer Characteristics 50 80 60 Transconductance v gate-source voltage 100 0 -2 VDS=-25V 100 VGS-Gate Source Voltage (Volts) Coss 0 140 120 -0.8 Transconductance v drain current -0.6 VGS-Gate Source Voltage (Volts) 100 -0.4 160 ID- Drain Current (Amps) VDS= -25V Voltage Saturation Characteristics RDS(ON) -Drain Source Resistance (Ω) -4 Saturation Characteristics -18 -2 -2 VDS=-25V 160 VDS - Drain Source Voltage (Volts) Output Characteristics 0 -4V 200 180 gfs-Transconductance (mS) -5V -0.2 -5V 200 180 VGS-Gate Source Voltage (Volts) -6V -0.4 -0.3 C-Capacitance (pF) -0.6 VGS= -10V -8V -7V -6V -0.4 gfs-Transconductance (mS) VGS= -10V -8V -7V ID(On) -On-State Drain Current (Amps) ID(On) -On-State Drain Current (Amps) TYPICAL CHARACTERISTICS 3-427