P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP2120C ZVP2120A ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω ISSUE 2 MARCH 94 FEATURES * 200 Volt VDS * RDS(on)=25Ω G REFER TO ZVP2120A FOR GRAPHS D G D S E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS -200 V Continuous Drain Current at Tamb=25°C ID -120 mA IDM -1.2 A VGS ± 20 V 700 mW -55 to +150 °C PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -200 V Continuous Drain Current at Tamb=25°C ID -120 mA Pulsed Drain Current IDM -1.2 A Pulsed Drain Current ± 20 V Gate Source Voltage 700 mW Power Dissipation at Tamb=25°C Ptot -55 to +150 °C Operating and Storage Temperature Range Tj:Tstg Gate Source Voltage VGS Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg SYMBOL MIN. Drain-Source Breakdown Voltage BVDSS -200 Gate-Source Threshold Voltage VGS(th) -1.5 Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current(1) ID(on) MAX. UNIT CONDITIONS. PARAMETER SYMBOL MIN. BVDSS -200 VGS(th) -1.5 V ID=-1mA, VGS=0V Drain-Source Breakdown Voltage -3.5 V ID=-1mA, VDS= VGS Gate-Source Threshold Voltage 20 nA VGS=± 20V, VDS=0V Gate-Body Leakage VDS=-200 V, VGS=0 VDS=-160 V, VGS=0V, T=125°C(2) Zero Gate Voltage Drain Current ID=-1mA, VGS=0V -3.5 V ID=-1mA, VDS= VGS IGSS 20 nA VGS=± 20V, VDS=0V IDSS -10 -100 µA µA VDS=-200 V, VGS=0 VDS=-160 V, VGS=0V, T=125°C(2) mA VDS=-25 V, VGS=-10V Ω VGS=-10V,ID=-150mA mS VDS=-25V,ID=-150mA µA µA mA VDS=-25 V, VGS=-10V On-State Drain Current(1) ID(on) 25 Ω VGS=-10V,ID=-150mA Static Drain-Source On-State Resistance (1) RDS(on) mS VDS=-25V,ID=-150mA Forward Transconductance (1)(2) gfs 50 Forward Transconductance (1)(2) gfs Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 25 pF Reverse Transfer Capacitance (2) Crss 7 pF VDS=-25V, VGS=0V, f=1MHz -300 25 50 Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 25 pF Reverse Transfer Capacitance (2) Crss 7 pF Turn-On Delay Time (2)(3) td(on) 7 ns Turn-On Delay Time (2)(3) td(on) 7 ns Rise Time (2)(3) tr 15 ns Rise Time (2)(3) tr 15 ns Turn-Off Delay Time (2)(3) t d(off) 12 ns Turn-Off Delay Time (2)(3) td(off) 12 ns Fall Time (2)(3) tf 15 ns Fall Time (2)(3) tf 15 ns VDD ≈ -25V, ID=-150mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-428 3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator UNIT MAX. UNIT CONDITIONS. V -10 -100 -300 Static Drain-Source On-State RDS(on) Resistance (1) VALUE ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER S ( VDS=-25V, VGS=0V, f=1MHz VDD ≈ -25V, ID=-150mA (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. 3-425 ( 3