SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVP4424G ISSUE 2 - OCTOBER 1995 FEATURES * 240 Volt VDS * RDS(on)= 8.8Ω typical at VGS=-3.5V * Low threshold and Fast switching APPLICATIONS * Electronic hook switches * Telecoms and Battery powered equipment COMPLEMENTARY TYPE PARTMARKING DETAIL - D S D G ZVN4424G ZVP4424 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS -240 V Continuous Drain Current at Tamb=25°C ID -480 mA Pulsed Drain Current IDM -1.0 A Gate Source Voltage VGS ± 40 V Power Dissipation at Tamb =25°C Ptot 2.5 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C 3 - 438 ZVP4424G ZVP4424G ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VGS(th) -0.7 Gate-Body Leakage Zero Gate Voltage Drain Current ID=-1mA, VGS=0V -2.0 V ID=-1mA, VDS= VGS IGSS 100 nA VGS=± 40V, VDS=0V IDSS -10 -100 µA µA VDS=-240V, VGS=0V VDS=-190V, VGS=0V, T=125°C A VDS=-10V, VGS=-10V Ω Ω VGS=-10V, ID=-200mA VGS=-3.5V, ID=-100mA mS VDS=-10V,ID=-0.2A -1.4 -0.75 -1.0 On-State Drain Current ID(on) Static Drain-Source On-State Resistance RDS(on) Forward Transconductance (1) (2) gfs Input Capacitance (2) Ciss 100 200 pF Common Source Output Capacitance (2) Coss 18 25 pF Reverse Transfer Capacitance (2) Crss 5 15 pF Turn-On Delay Time (2)(3) td(on) 8 15 ns Rise Time (2)(3) tr 8 15 ns Turn-Off Delay Time (2)(3) td(off) 26 40 ns Fall Time (2)(3) tf 20 30 ns 7.1 8.8 9 11 125 -1.2 -1.0 -0.8 -0.6 -0.4 Ciss 150 100 -2V Coss 50 S G Crss 0 VDS=-25V, VGS=0V, f=1MHz VDD ≈−50V, ID =-0.25A, VGEN=-10V -0.01 -1 -10 -100 VDS-Drain Source Voltage (Volts) -6 -8 VDS= -20V -50V -100V Note:ID=- 0.25A -16 0 1 2 3 4 Q-Gate Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3 - 439 VDS=-10V 300µs Pulsed Test -0.4 -0.2 0 -2 -4 -6 -8 0 -10 5 -2 -4 -6 -8 -10 VGS - Gate Source Voltage (Volts) Transfer Characteristics 400 400 300 200 300µs Pulsed Test VDS=-10V 100 300 200 300µs Pulsed Test VDS=-10V 100 sf sf 0 0 -0.2 -0.4 -0.6 -0.8 0 -1.0 0 ID- Drain Current (Amps) 100 -4 -6 Transconductance v gate-source voltage 2.4 -2.5V VGS=-2V -2 VGS-Gate Source Voltage (Volts) Transconductance v drain current -4 -14 -0.6 VDS - Drain Source Voltage (Volts) 0 -12 -0.8 Saturation Characteristics -2 -10 -2.5V 0 RDS(on)-Drain Source On Resistance Ω -Gate Source Voltage (Volts) 200 V C-Capacitance (pF) 250 -3V -0.2 TYPICAL CHARACTERISTICS Note:VGS=0V -4V -1.0 0 (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 300 -1.2 300µs Pulsed Test VGS=-10V -5V I - Drain Current (Amps) Gate-Source Threshold Voltage V g -Transconductance (mS) -240 TYPICAL CHARACTERISTICS CONDITIONS. VGS=-10V ID=0.2A 2.2 2.0 -3V and V BVDSS MAX. UNIT -10V 1.8 1.6 1.4 1.2 10 1.0 300µs Pulsed Test 1 -0.01 -0.1 -1 -10 Normalised R Drain-Source Breakdown Voltage TYP I - Drain Current (Amps) SYMBOL MIN. g -Transconductance (mS) PARAMETER ID-Drain Current (Amps) On-resistance vs Drain Current 0.8 0.6 VGS=VDS ID=-1mA 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 Junction Temperature (°C) Normalised RDS(on) and VG S(th) vs Temperature 3 - 440 ZVP4424G ZVP4424G ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). VGS(th) -0.7 Gate-Body Leakage Zero Gate Voltage Drain Current ID=-1mA, VGS=0V -2.0 V ID=-1mA, VDS= VGS IGSS 100 nA VGS=± 40V, VDS=0V IDSS -10 -100 µA µA VDS=-240V, VGS=0V VDS=-190V, VGS=0V, T=125°C A VDS=-10V, VGS=-10V Ω Ω VGS=-10V, ID=-200mA VGS=-3.5V, ID=-100mA mS VDS=-10V,ID=-0.2A -1.4 -0.75 -1.0 On-State Drain Current ID(on) Static Drain-Source On-State Resistance RDS(on) Forward Transconductance (1) (2) gfs Input Capacitance (2) Ciss 100 200 pF Common Source Output Capacitance (2) Coss 18 25 pF Reverse Transfer Capacitance (2) Crss 5 15 pF Turn-On Delay Time (2)(3) td(on) 8 15 ns Rise Time (2)(3) tr 8 15 ns Turn-Off Delay Time (2)(3) td(off) 26 40 ns Fall Time (2)(3) tf 20 30 ns 7.1 8.8 9 11 125 -1.2 -1.0 -0.8 -0.6 -0.4 Ciss 150 100 -2V Coss 50 S G Crss 0 VDS=-25V, VGS=0V, f=1MHz VDD ≈−50V, ID =-0.25A, VGEN=-10V -0.01 -1 -10 -100 VDS-Drain Source Voltage (Volts) -6 -8 VDS= -20V -50V -100V Note:ID=- 0.25A -16 0 1 2 3 4 Q-Gate Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3 - 439 VDS=-10V 300µs Pulsed Test -0.4 -0.2 0 -2 -4 -6 -8 0 -10 5 -2 -4 -6 -8 -10 VGS - Gate Source Voltage (Volts) Transfer Characteristics 400 400 300 200 300µs Pulsed Test VDS=-10V 100 300 200 300µs Pulsed Test VDS=-10V 100 sf sf 0 0 -0.2 -0.4 -0.6 -0.8 0 -1.0 0 ID- Drain Current (Amps) 100 -4 -6 Transconductance v gate-source voltage 2.4 -2.5V VGS=-2V -2 VGS-Gate Source Voltage (Volts) Transconductance v drain current -4 -14 -0.6 VDS - Drain Source Voltage (Volts) 0 -12 -0.8 Saturation Characteristics -2 -10 -2.5V 0 RDS(on)-Drain Source On Resistance Ω -Gate Source Voltage (Volts) 200 V C-Capacitance (pF) 250 -3V -0.2 TYPICAL CHARACTERISTICS Note:VGS=0V -4V -1.0 0 (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 300 -1.2 300µs Pulsed Test VGS=-10V -5V I - Drain Current (Amps) Gate-Source Threshold Voltage V g -Transconductance (mS) -240 TYPICAL CHARACTERISTICS CONDITIONS. VGS=-10V ID=0.2A 2.2 2.0 -3V and V BVDSS MAX. UNIT -10V 1.8 1.6 1.4 1.2 10 1.0 300µs Pulsed Test 1 -0.01 -0.1 -1 -10 Normalised R Drain-Source Breakdown Voltage TYP I - Drain Current (Amps) SYMBOL MIN. g -Transconductance (mS) PARAMETER ID-Drain Current (Amps) On-resistance vs Drain Current 0.8 0.6 VGS=VDS ID=-1mA 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 Junction Temperature (°C) Normalised RDS(on) and VG S(th) vs Temperature 3 - 440