ZXM64N03X 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.045V; ID=5.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package • Motor control S ORDERING INFORMATION DEVICE S REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL S G ZXM64N03XTA 7 12mm embossed 1000 units ZXM64N03XTC 13 12mm embossed 4000 units DEVICE MARKING • ZXM4N03 PROVISIONAL ISSUE A - JULY 1999 129 Top View 8 Disconnect switches D 6 7 • D 5 Power Management Functions 2 • 3 DC - DC Converters 4 • 1 APPLICATIONS D D ZXM64N03X ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 30 V Gate- Source Voltage V GS ± 20 V Continuous Drain Current (V GS=10V; T A=25°C)(b) (V GS=10V; T A=70°C)(b) ID 5.0 4.0 A Pulsed Drain Current (c) I DM 30 A Continuous Source Current (Body Diode)(b) IS 2.4 A I SM 30 A Power Dissipation at T A=25°C (a) Linear Derating Factor Pulsed Source Current (Body Diode)(c) PD 1.1 8.8 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 1.8 14.4 W mW/°C Operating and Storage Temperature Range T j:T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 113 °C/W Junction to Ambient (b) R θJA 70 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. PROVISIONAL ISSUE A - JULY 1999 130 ZXM64N03X Max Power Dissipation (Watts) CHARACTERISTICS 100 ID - Drain Current (A) Refer Note (a) 10 DC 1s 100ms 10ms 1ms 100us 1 100m 0.1 1 10 100 2.0 1.5 Refer Note (b) Refer Note (a) 1.0 0.5 0 0 20 VDS - Drain-Source Voltage (V) 40 60 100 80 120 140 160 T - Temperature (°C) Derating Curve Safe Operating Area 80 120 Themal Resistance (°C/W) Thermal Resistance (°C/W) Ref Note (a) 60 40 20 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 90 60 30 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 100 Pulse Width (s) 0.01 0.1 1 10 100 Pulse Width (s) Transient Thermal Impedance Transient Thermal Impedance Refer Note (b) Refer Note (a) PROVISIONAL ISSUE A - JULY 1999 131 1000 ZXM64N03X ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs 30 V I D=250µA, V GS=0V 1 µA V DS=30V, V GS=0V 100 nA V GS=± 20V, V DS=0V V I D =250µA, V DS= V GS Ω Ω V GS=10V, I D=3.7A V GS=4.5V, I D=1.9A S V DS=10V,I D=1.9A 1.0 0.045 0.060 4.3 DYNAMIC (3) Input Capacitance C iss 950 pF Output Capacitance C oss 200 pF Reverse Transfer Capacitance C rss 50 pF Turn-On Delay Time t d(on) 4.2 ns Rise Time tr 4.5 ns Turn-Off Delay Time t d(off) 20.5 ns Fall Time tf 8 ns Total Gate Charge Qg 27 nC Gate-Source Charge Q gs 5 nC Gate Drain Charge Q gd 4.5 nC Diode Forward Voltage (1) V SD 0.95 V T j=25°C, I S=3.7A, V GS=0V Reverse Recovery Time (3) t rr 24.5 ns T j=25°C, I F=3.7A, di/dt= 100A/µs Reverse Recovery Charge(3) Q rr 19.1 nC V DS=25 V, V GS=0V, f=1MHz SWITCHING(2) (3) V DD =5V, I D=3.7A R G=6.2Ω, R D=4.0Ω (Refer to test circuit) V DS=24V,V GS=10V, I D =3.7A (Refer to test circuit) SOURCE-DRAIN DIODE (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JULY 1999 132 ZXM64N03X TYPICAL CHARACTERISTICS 100 100 +150°C VGS 10V 6V 5V ID - Drain Current (A) ID - Drain Current (A) +25°C 4.5V 4V 10 3.5V 3V 100m 2.5V VGS 10V 6V 5V 4.5V 4V 3.5V 10 3V 2.5V 100m 2V 10m 0.1 1 10 10m 100 Output Characteristics 1.7 Normalised RDS(on) and VGS(th) ID - Drain Current (A) 100 Output Characteristics T=150°C 10 T=25°C 2.5 3 3.5 4 4.5 5 5.5 VGS - Gate-Source Voltage (V) RDS(on) 1.5 1.3 1.1 0.9 ISD - Reverse Drain Current (A) VGS=3V VGS=4.5V VGS=10V 10 1 10 VGS=VDS ID=250uA 0.7 VGS(th) 0.5 -100 0 200 100 Tj - Junction Temperature (°C) Normalised RDS(on) and VGS(th) v Temperature 100 0.1 VGS=10V ID=3.7A Transfer Characteristics RDS(on) - Drain-Source On-Resistance ( Ω) 10 VDS - Drain-Source Voltage (V) VDS=10V 0.1 1 VDS - Drain-Source Voltage (V) 100 0.1 0.1 100 100 10 1 T=150°C T=25°C 100m 0.3 0.5 0.7 0.9 1.1 1.3 ID - Drain Current (A) VSD - Source-Drain Voltage (V) On-Resistance v Drain Current Source-Drain Diode Forward Voltage PROVISIONAL ISSUE A - JULY 1999 133 ZXM64N03X 1600 Vgs=0V f=1Mhz 1400 C - Capacitance (pF) VGS - Gate-Source Voltage (V) TYPICAL CHARACTERISTICS Ciss Coss Crss 1200 1000 800 600 400 200 0 0.1 1 10 100 14 ID=3.7A 12 VDS=24V 10 VDS=15V 8 6 4 2 0 0 5 10 15 20 25 VDS - Drain Source Voltage (V) Q -Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE A - JULY 1999 134 ZXM64N03X PACKAGE DIMENSIONS DIM D Millimetres Inches MIN MIN A 7 6 5 1 2 3 4 1.10 MAX 0.043 A1 0.05 0.15 0.002 0.006 B 0.25 0.40 0.010 0.016 C 0.13 0.23 0.005 0.009 D 2.90 3.10 0.114 0.122 e 0.65 BSC 0.0256 BSC E 2.90 3.10 0.114 0.122 H 4.90 BSC 0.193 BSC L 0.40 0.70 0.016 0.028 q° 0° 6° 0° 6° H E 8 MAX eX6 A A1 θ° B C L Conforms to JEDEC MO-187 Iss A PAD LAYOUT DETAILS Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PROVISIONAL ISSUE A - JULY 1999 136