ZXM64P02X 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.090V; ID= -3.5A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package • Motor control S ORDERING INFORMATION DEVICE S REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL S G ZXM64P02XTA 7 12mm embossed 1000 units ZXM64P02XTC 13 12mm embossed 4000 units DEVICE MARKING • ZXM4P02 PROVISIONAL ISSUE A - JULY 1999 137 Top View 8 Disconnect switches D 6 7 • D 5 Power Management Functions 2 • 3 DC - DC Converters 4 • 1 APPLICATIONS D D ZXM64P02X ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS -20 V Gate- Source Voltage V GS ± 12 V Continuous Drain Current (V GS=4.5V; T A=25°C)(b) (V GS=4.5V; T A=70°C)(b) ID -3.5 -2.8 A Pulsed Drain Current (c) I DM -19 A Continuous Source Current (Body Diode)(b) IS -2.0 A Pulsed Source Current (Body Diode)(c) LIMIT UNIT I SM -19 A Power Dissipation at T A=25°C (a) Linear Derating Factor PD 1.1 8.8 W mW/°C Power Dissipation at T A=25°C (b) Linear Derating Factor PD 1.8 14.4 W mW/°C Operating and Storage Temperature Range T j:T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA 113 °C/W Junction to Ambient (b) R θJA 70 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. PROVISIONAL ISSUE A - JULY 1999 138 ZXM64P02X Max Power Dissipation (Watts) CHARACTERISTICS 100 10 1 100m Thermal Resistance (°C/W) DC 1s 100ms 10ms 1ms 100us 0.1 1 10 100 Refer Note (b) Refer Note (a) 1.0 0.5 0 0 20 40 60 100 80 120 Safe Operating Area Derating Curve 140 160 120 Refer Note (b) 60 20 1.5 T - Temperature (°C) 80 40 2.0 -VDS - Drain-Source Voltage (V) Themal Resistance (°C/W) -ID - Drain Current (A) Refer Note (a) D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 0.01 0.1 1 10 Refer Note (a) 90 60 30 D=0.5 D=0.2 D=0.1 Single Pulse 0 0.0001 0.001 100 Pulse Width (s) 0.01 0.1 1 10 100 Pulse Width (s) Transient Thermal Impedance Transient Thermal Impedance PROVISIONAL ISSUE A - JULY 1999 139 1000 ZXM64P02X ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs -20 V I D=-250µA, V GS=0V -1 µA V DS=-20V, V GS=0V ±100 nA V GS=± 12V, V DS=0V V I D =-250µA, V DS= V GS Ω Ω V GS=-4.5V, I D=-2.4A V GS=-2.7V, I D=-1.2A S V DS=-10V,I D=-1.2A -0.7 0.090 0.13 2.6 DYNAMIC (3) Input Capacitance C iss 900 pF Output Capacitance C oss 350 pF Reverse Transfer Capacitance C rss 150 pF Turn-On Delay Time td(on) 5.6 ns Rise Time tr 12.3 ns Turn-Off Delay Time td(off) 45.5 ns Fall Time tf 40.0 ns Total Gate Charge Qg 6.9 nC Gate-Source Charge Q gs 1.3 nC Gate Drain Charge Qgd 2.5 nC Diode Forward Voltage (1) V SD -0.95 V T j=25°C, I S=-2.4A, V GS=0V Reverse Recovery Time (3) trr 46.0 ns T j=25°C, I F=-2.4A, di/dt= 100A/µs Reverse Recovery Charge(3) Qrr 35.0 nC V DS=-15 V, V GS=0V, f=1MHz SWITCHING(2) (3) V DD =-10V, I D=-2.4A R G=6.0Ω, R D=4.0Ω (Refer to test circuit) V DS=-16V,V GS=-4.5V, I D =-2.4A (Refer to test circuit) SOURCE-DRAIN DIODE (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JULY 1999 140 ZXM64P02X TYPICAL CHARACTERISTICS 100 100 +150°C -ID - Drain Current (A) 5V 4.5V 4V 3.5V 3V -VGS 2.5V 10 2V 1 0.1 1.5V 0.1 10 1 -ID - Drain Current (A) 2V 1.5V 1 T=25°C 1 1 -VGS 1.5 2 2.5 3 3.5 1.6 1.4 RDS(on) VGS=-4.5V ID=-2.4A 1.2 1.0 VGS=VDS ID=-250uA 0.8 VGS(th) 0.6 0.4 -100 - Gate-Source Voltage (V) -ISD - Reverse Drain Current (A) 1 VGS=-2V VGS=-5V 0.1 10 0 50 100 150 200 Normalised RDS(on) and VGS(th) v Temperature 10 1 -50 Tj - Junction Temperature (°C) Typical Transfer Characteristics RDS(on) - Drain-Source On-Resistance (Ω) 100 10 Output Characteristics T=150°C 0.1 1 Output Characteristics 10 0.01 0.1 -VDS - Drain-Source Voltage (V) VDS=-10V 0.5 -VGS 3V 2.5V 10 0.1 100 100 0.1 5V 4.5V 4V 3.5V -VDS - Drain-Source Voltage (V) Normalised RDS(on) and VGS(th) -ID - Drain Current (A) +25 C 100 100 10 1 0.1 T=150°C T=25°C 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -ID - Drain Current (A) -VSD - Source-Drain Voltage (V) On-Resistance v Drain Current Source-Drain Diode Forward Voltage PROVISIONAL ISSUE A - JULY 1999 141 ZXM64P02X -VGS - Gate-Source Voltage (V) TYPICAL CHARACTERISTICS 2000 Vgs=0V f=1Mhz C - Capacitance (pF) 1800 1600 Ciss Coss Crss 1400 1200 1000 800 600 400 200 0 0.1 1 10 100 5 ID=-2.4A 4.5 4 VDS=-15V 3.5 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 6 -VDS - Drain Source Voltage (V) Q -Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Waveforms Switching Time Test Circuit PROVISIONAL ISSUE A - JULY 1999 142 ZXM64P02X PACKAGE DIMENSIONS DIM D Millimetres Inches MIN MIN A 7 1.10 MAX 0.043 6 5 A1 0.05 0.15 0.002 0.006 B 0.25 0.40 0.010 0.016 C 0.13 0.23 0.005 0.009 D 2.90 3.10 0.114 0.122 e 0.65 BSC 0.0256 BSC E 2.90 3.10 0.114 0.122 H 4.90 BSC 0.193 BSC L 0.40 0.70 0.016 0.028 q° 0° 6° 0° 6° H E 8 MAX 1 2 3 4 eX6 A A1 θ° B C L Conforms to JEDEC MO-187 Iss A PAD LAYOUT DETAILS Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PROVISIONAL ISSUE A - JULY 1999 144