ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SO8 • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • Motor Drive • LCD backlighting Q1 = N-CHANNEL Q2 = P-CHANNEL ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMC3A16DN8TA 7’‘ 12mm 500 units ZXMC3A16DN8TC 13’‘ 12mm 2500 units PINOUT DEVICE MARKING ZXMC 3A16 Top view ISSUE 1 - OCTOBER 2005 1 ZXMC3A16DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DSS 30 -30 V Gate-Source Voltage V GS ⫾20 ⫾20 V Continuous Drain Current@V GS =10V; T A =25⬚C (b)(d) @V GS =10V; T A =70⬚C (b)(d) @V GS =10V; T A =25⬚C (a)(d) ID 6.4 5.1 4.9 -5.4 -4.3 -4.1 A A A Pulsed Drain Current (c) I DM 30 -25 A Continuous Source Current (Body Diode) (b) N-Channel P-Channel UNIT IS 3.4 -3.2 A Pulsed Source Current (Body Diode) (c) I SM 30 -25 A Power Dissipation at TA=25°C (a)(d) Linear Derating Factor PD 1.25 10 W mW/°C Power Dissipation at TA=25°C (a)(e) Linear Derating Factor PD 1.8 14 W mW/°C Power Dissipation at TA=25°C (b)(d) Linear Derating Factor PD 2.1 17 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a)(d) R θJA 100 °C/W Junction to Ambient (b)(e) R θJA 70 °C/W Junction to Ambient (b)(d) R θJA 60 °C/W Notes (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power. ISSUE 1 - OCTOBER 2005 2 ZXMC3A16DN8 CHARACTERISTICS ISSUE 1 - OCTOBER 2005 3 ZXMC3A16DN8 N-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS 30 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) TYP. MAX. UNIT CONDITIONS STATIC DYNAMIC I D =250µA, V GS =0V 0.5 µA V DS =30V, V GS =0V 100 nA V GS =±20V, V DS =0V V I =250µA, V DS = V GS D ⍀ ⍀ V GS =10V, I D =9A V GS =4.5V, I D =7.4A V DS =15V,I D =9A 1 Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1)(3) V 0.035 0.050 g fs 13.5 S (3) Input Capacitance C iss 796 pF Output Capacitance C oss 137 pF Reverse Transfer Capacitance C rss 84 pF Turn-On Delay Time t d(on) 3.0 ns Rise Time tr 6.4 ns Turn-Off Delay Time t d(off) 21.6 ns Fall Time tf 9.4 ns Gate Charge Qg 9.2 nC Total Gate Charge Qg 17.5 nC Gate-Source Charge Q gs 2.3 nC Gate-Drain Charge Q gd 3.1 nC V SD 0.85 t rr Q rr V DS =25 V, V GS =0V, f=1MHz SWITCHING (2) (3) V DD =15V, I D =3.5A R G =6.0Ω, V GS =10V V DS =15V,V GS =5V, I D =3.5A V DS =15V,V GS =10V, I D =3.5A SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) 0.95 V T J =25°C, I S =5.1A, V GS =0V 17.8 ns T J =25°C, I F =3.5A, di/dt= 100A/µs 11.6 nC NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - OCTOBER 2005 4 ZXMC3A16DN8 P-CHANNEL ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS -30 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (1)(3) g fs Input Capacitance TYP. MAX. UNIT CONDITIONS STATIC V I D =-250µA, V GS =0V -1.0 A V DS =-30V, V GS =0V 100 nA V GS =⫾20V, V DS =0V V I =-250A, V DS = V GS D ⍀ ⍀ V GS =-10V, I D =-4.2A V GS =-4.5V, I D =-3.4A 9.2 S V DS =-15V,I D =-4.2A C iss 970 pF Output Capacitance C oss 166 pF Reverse Transfer Capacitance C rss 116 pF Turn-On Delay Time t d(on) 3.8 ns Rise Time tr 6.1 ns Turn-Off Delay Time t d(off) 35 ns Fall Time tf 19 ns Gate Charge Qg 12.9 nC Total Gate Charge Qg 24.9 nC Gate-Source Charge Q gs 2.67 nC Gate-Drain Charge Q gd 3.86 nC V SD -0.85 t rr Q rr 1.0 0.048 0.070 DYNAMIC (3) SWITCHING V DS =-15 V, V GS =0V, f=1MHz (2) (3) V DD =-15V, I D =-1A R G =6.0Ω, V GS =-10V V DS =-15V,V GS =-5V, I D =-4.2A V DS =-15V,V GS =-10V, I D =-4.2A SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) NOTES (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - OCTOBER 2005 5 -0.95 V T J =25°C, I S =-3.6A, V GS =0V 21.2 ns T J =25°C, I F =-2A, di/dt= 100A/µs 18.7 nC ZXMC3A16DN8 N-CHANNEL TYPICAL CHARACTERISTICS 10V 3V 2.5V 10 1 2V VGS 0.1 1.5V 0.01 0.1 10V T = 150°C 4V ID Drain Current (A) ID Drain Current (A) T = 25°C 1 3.5V 3V 2.5V 4V 10 2V 1 1.5V 0.1 VGS 0.01 1V 10 0.1 VDS Drain-Source Voltage (V) 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 10 Normalised RDS(on) and VGS(th) ID Drain Current (A) 1.6 T = 150°C T = 25°C 1 VDS = 10V 0.1 1 2 3 RDS(on) 1.2 1.0 0.8 VGS(th) 0.6 VGS = VDS ID = 250uA 0.4 -50 4 VGS Gate-Source Voltage (V) 0 50 100 150 Tj Junction Temperature (°C) Typical Transfer Characteristics Normalised Curves v Temperature 100 100 T = 25°C ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (Ω) VGS = 10V ID = 1.5A 1.4 2V 10 VGS 2.5V 1 3V 0.1 4V 10V 0.01 0.1 1 T = 150°C 10 T = 25°C 1 0.1 0.2 10 ID Drain Current (A) On-Resistance v Drain Current 0.4 0.6 0.8 1.0 1.2 VSD Source-Drain Voltage (V) 1.4 Source-Drain Diode Forward Voltage ISSUE 1 - OCTOBER 2005 6 ZXMC3A16DN8 N-CHANNEL TYPICAL CHARACTERISTICS 10 VGS = 0V f = 1MHz 1000 VGS Gate-Source Voltage (V) C Capacitance (pF) 1200 800 600 CISS COSS CRSS 400 200 0 0.1 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage ISSUE 1 - OCTOBER 2005 7 ID = 3.5A 8 6 4 2 VDS = 15V 0 0 5 10 15 Q - Charge (nC) Gate-Source Voltage v Gate Charge 20 ZXMC3A16DN8 P-CHANNEL TYPICAL CHARACTERISTICS -ID Drain Current (A) 4V T = 150°C 3.5V 3V 2.5V 10 -ID Drain Current (A) 10V T = 25°C 2V 1 -VGS 0.1 1.5V 0.01 0.1 1 3.5V 3V 2.5V 2V 1 1.5V -VGS 0.1 0.01 10 4V 10V 10 0.1 -VDS Drain-Source Voltage (V) 1 10 -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics 1.6 T = 150°C T = 25°C 1 -VDS = 10V 0.1 1 2 VGS = -10V ID = -4.2A 1.4 Normalised RDS(on) and VGS(th) -ID Drain Current (A) 10 RDS(on) 1.2 1.0 VGS(th) 0.8 VGS = VDS ID = -250uA 0.6 0.4 -50 3 -VGS Gate-Source Voltage (V) 0 50 100 150 Tj Junction Temperature (°C) Typical Transfer Characteristics Normalised Curves v Temperature T = 25°C -ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance (Ω) 100 1.5V 100 -VGS 2V 10 2.5V 3V 1 3.5V 4V 0.1 10V 0.01 0.01 0.1 1 T = 150°C 10 0.1 0.010.0 10 -ID Drain Current (A) T = 25°C 1 0.2 0.4 0.6 0.8 1.0 1.2 -VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance v Drain Current ISSUE 1 - OCTOBER 2005 8 ZXMC3A16DN8 P-CHANNEL TYPICAL CHARACTERISTICS 10 VGS = 0V f = 1MHz 1200 -VGS Gate-Source Voltage (V) C Capacitance (pF) 1400 1000 CISS 800 600 COSS CRSS 400 200 0 0.1 1 10 -VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage -ID = 4.2A 8 6 4 2 -VDS = 15V 0 0 5 10 15 20 25 Q - Charge (nC) Gate-Source Voltage v Gate Charge ISSUE 1 - OCTOBER 2005 9 ZXMC3A16DN8 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETERS PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max A 1.35 1.75 0.053 0.069 e A1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010 H 5.80 6.20 0.228 0.244 ⍜ 0° 8° 0° 8° E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 - - - - - 1.27 BSC Min Max 0.050 BSC © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - OCTOBER 2005 10