ZXMC3A18DN8 ADVANCE INFORMATION COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V(BR)DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • Motor Drive Q1 = N-channel • LCD backlighting Q2 = P-channel ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMC3A18DN8TA 7” 12mm 500 units ZXMC3A18DN8TC 13” 12mm 2500 units DEVICE MARKING • ZXMC 3A18 Top View DRAFT ISSUE C - JUNE 2003 1 SEMICONDUCTORS ZXMC3A18DN8 ADVANCE INFORMATION ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 30 -30 V Gate-Source Voltage V GS ±20 ±20 V ID 7.6 6.1 5.8 -6.3 A -5.0 A -4.8 A A Continuous Drain Current (V GS = 10V; T A =25°C) (b)(d) (V GS = 10V; T A =70°C) (b)(d) (V GS = 10V; T A =25°C) (a)(d) (c) Pulsed Drain Current Continuous Source Current (Body Diode) (b) I DM 37 -30 IS 3.6 tbd A Pulsed Source Current (Body Diode) (c) I SM 37 30 A Power Dissipation at T A =25°C (a) (d) Linear Derating Factor PD Power Dissipation at T A =25°C (a) (e) PD Linear Derating Factor Power Dissipation at T A =25°C (b) (d) PD Linear Derating Factor T j , T stg Operating and Storage Temperature Range 1.25 W 10 mW/°C 1.8 W 14 mW/°C 2.1 W 17 mW/°C -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) (d) R ⍜JA 100 °C/W Junction to Ambient (a) (e) R ⍜JA 70 °C/W (b) (d) R ⍜JA 60 °C/W Junction to Ambient NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec. (c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300s, d⬍= 0.02. Refer to Transient Thermal Impedance graph. (d) For device with one active die. (e) For device with two active die running at equal power. DRAFT ISSUE C - JUNE 2003 SEMICONDUCTORS 2 ZXMC3A18DN8 ADVANCE INFORMATION CHARACTERISTICS DRAFT ISSUE C - JUNE 2003 3 SEMICONDUCTORS ZXMC3A18DN8 ADVANCE INFORMATION N-Channel ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Zero Gate Voltage Drain Current I DSS 0.5 A I D = 250A, V GS =0V V DS =30V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =±20V, V DS =0V Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Drain-Source Breakdown Voltage Forward Transconductance (1) (3) 30 V (BR)DSS V 1.0 V I D = 250A, V DS =V GS 0.025 ⍀ 0.030 ⍀ V GS = 10V, I D = 5.8A V GS = 4.5V, I D = 5.3A V DS = 15V, I D = 5.8A g fs 17.5 S DYNAMIC (3) Input Capacitance C iss 1800 pF Output Capacitance C oss 289 pF Reverse Transfer Capacitance C rss 178 pF V DS = 25V, V GS =0V f=1MHz SWITCHING (2) (3) Turn-On-Delay Time t d(on) 5.5 ns Rise Time tr 8.7 ns Turn-Off Delay Time t d(off) 33 ns Fall Time tf 8.5 ns Gate Charge Qg 19.4 nC V DD = 15V, I D =6A R G ≅ 6.0⍀, V GS = 10V V DS = 15V, V GS = 5V I D = 3.5A Total Gate Charge Qg 36 nC Gate-Source Charge Q gs 5.5 nC Gate-Drain Charge Q gd 7.0 nC V DS = 15V, V GS = 10V I D = 3.5A SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD 0.95 V T j =25°C, I S = 6A, V GS =0V Reverse Recovery Time (3) Reverse Recovery Charge (3) t rr 20.5 ns T j =25°C, I F = 6A, Q rr 41.5 nC di/dt=100A/s NOTES (1) Measured under pulsed conditions. Pulse width ⱕ 300ms; Duty cycle ⱕ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. DRAFT ISSUE C - JUNE 2003 SEMICONDUCTORS 4 ZXMC3A18DN8 ADVANCE INFORMATION TYPICAL CHARACTERISTICS DRAFT ISSUE C - JUNE 2003 5 SEMICONDUCTORS ZXMC3A18DN8 ADVANCE INFORMATION TYPICAL CHARACTERISTICS DRAFT ISSUE C - JUNE 2003 SEMICONDUCTORS 6 ZXMC3A18DN8 ADVANCE INFORMATION P-Channel ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS STATIC Zero Gate Voltage Drain Current I DSS -1.0 A I D = -250A, V GS =0V V DS =-30V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =±20V, V DS =0V Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Drain-Source Breakdown Voltage Forward Transconductance DYNAMIC (3) (1) (3) -30 V (BR)DSS V -1.0 V I D = 250A, V DS =V GS 0.035 ⍀ 0.050 ⍀ V GS = -10V, I D = -4.8A V GS = -4.5V, I D = -4.0A V DS = -15V, I D = -4.8A g fs tbd S Input Capacitance C iss 1630 pF Output Capacitance C oss 320 pF Reverse Transfer Capacitance C rss 210 pF V DS = -15V, V GS =0V f=1MHz SWITCHING (2) (3) Turn-On-Delay Time t d(on) 9.2 ns Rise Time tr 18 ns Turn-Off Delay Time t d(off) 96 ns Fall Time tf 60 ns Gate Charge Qg tbd nC V DD = -15V, I D =-1A R G ≅ 6.0⍀, V GS = 10V V DS = -15V, V GS = -5V I D = -5.0A Total Gate Charge Qg 41 nC Gate-Source Charge Q gs 5.2 nC Gate-Drain Charge Q gd 7.3 nC V DS = -15V, V GS = -10V I D = -5.0A SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD -0.95 V T j =25°C, I S = -tbd, V GS =0V Reverse Recovery Time (3) Reverse Recovery Charge (3) t rr tbd ns T j =25°C, I F = -tbd, Q rr tbd nC di/dt=100A/s NOTES (1) Measured under pulsed conditions. Pulse width ⱕ 300ms; Duty cycle ⱕ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. DRAFT ISSUE C - JUNE 2003 7 SEMICONDUCTORS ZXMC3A18DN8 ADVANCE INFORMATION PACKAGE OUTLINE ⍜ L H E D Pin 1 A c A1 Seating Plane e b Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimetres Inches DIM Millimetres Inches DIM Min Max Min Max Min Max A 1.35 1.75 0.053 0.069 e A1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010 H 5.80 6.20 0.228 0.244 0° 8° 0° 8° E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 - - - - - 1.27BSC Min Max 0.050BSC © Zetex plc 2003 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com DRAFT ISSUE C - JUNE 2003 SEMICONDUCTORS 8