ZXMHN6A07T8 60V N-CHANNEL MOSFET H-BRIDGE SUMMARY V(BR)DSS= 60V : RDS(on)= 0.3 ; ID= 1.6A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SM8 FEATURES · Compact package · Low on state losses · Low drive requirements · Operates up to 60V · 1 Amp continuous rating APPLICATIONS · Motor control ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMHN6 A0 7 T8 TA 7” 12mm 1,000 units ZXMHN6 A0 7 T8 TC 13” 12mm 4,000 units PINOUT DEVICE MARKING · ZXMH N6A07 TOP VIEW ISSUE 2 - MAY 2004 1 SEMICONDUCTORS ZXMHN6A07T8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V DSS 60 V Gate-source voltage V GS ± 20 V 1.6 A 1.3 A 1.4 A I DM 9 A IS 1 A I SM 9 A Any Single transistor " on" (a) (d) 1.1 W Single transistor ‘ on’ (b) (d) 1.4 W Two transistors ‘ on’ equally (a) (e) 1.6 W Single transistor " on" (a) (d) 8.8 mW/° C Single transistor ‘ on’ (b) (d) 11.2 mW/° C Two transistors ‘ on’ equally (a) (e) 13.2 mW/° C 114 ° C/W 89 ° C/W 76 ° C/W -55 to + 150 °C Continuous drain current (V GS= 1 0 V; T A = 2 5 ° C)(b) (d) I D (V GS= 1 0 V; T A = 7 0 ° C)(b) (d) (V GS= 1 0 V; T A = 2 5 ° C)(a) (d) Pulsed drain current (c) Continuous source current (body diode) (b) (d) Pulsed source current (body diode) (c) Total power dissipation at T A = 2 5 ° C PTOT Linear derating factor above 2 5 ° C (a) Thermal resistance - junction to ambient Rth(j-amb) Single transistor " on" (a) (d) Single transistor " on" (b) (d) Two transistors ‘ on’ equally (a) (e) Operating and storage temperature range T j, T stg (a) For a device mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2oz weight copper in still air conditions with the heat sink split into three equal areas, one for each drain connection. (b) For a device surface mounted on a FR4 PCB at t ⬍ = 10 sec. (c) Repetitive rating on 50mm x 50mm x 1.6mm FR4 PCB, duty cycle 2% , pulse width 300S in still air conditions with the heat sink split into three equal areas, one for each drain connection. (d) For device with one active die. (e) For any two die not sharing the same drain connection. ISSUE 2 - MAY 2004 SEMICONDUCTORS 2 ZXMHN6A07T8 CHARACTERISTICS ISSUE 2 - MAY 2004 3 SEMICONDUCTORS ZXMHN6A07T8 ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-source breakdown voltage V (BR)DSS 60 Zero gate voltage drain current I DSS TYP. MAX. UNIT CONDITIONS STATIC Gate-body leakage I GSS Gate-source threshold voltage V GS(th) Static drain-source on-state resistance (1 ) RDS(on) Forward transconductance (1 ) (3 ) 1.0 A I D = 2 5 0 A, V GS = 0 V V DS = 6 0 V , V GS = 0 V 100 nA V GS = ± 2 0 V , V DS = 0 V 3.0 V 0.3 ⍀ I D = 2 5 0 A, V DS = V GS V GS = 1 0 V , I D = 1 . 8 A 0.45 ⍀ V GS = 4 . 5 V , I D = 1 . 3 A V DS = 1 5 V , I D = 1 . 8 A V 1.0 gfs 2.3 S Input capacitance C iss 166 pF Output capacitance C oss 20 pF Reverse transfer capacitance SWITCHING(2 ) (3 ) C rss 9 pF DYNAMIC (3 ) V DS = 4 0 V , V GS = 0 V f= 1 MHz Turn-on-delay time t d(on) 1.8 ns Rise time tr 1.4 ns V DD = 3 0 V , I D = 1 . 8 A Turn-off delay time t d(off) 4.9 ns RG @ 6 . 0 W, V GS = 1 0 V Fall time tf 2.0 ns Total gate charge Qg 3.2 nC Gate-source charge Q gs 0.7 nC Gate drain charge Q gd 0.8 nC V DS = 3 0 V , V GS = 1 0 V ID= 1 . 8 A SOURCE-DRAIN DIODE Diode forward voltage (1 ) V SD Reverse recovery time (3 ) t rr Reverse recovery charge (3 ) Q rr 0.95 V T j= 2 5 ° C, I S = 0 . 4 5 A, 21 ns 21 nC T j= 2 5 ° C, I F = 1 . 0 A, di/ dt= 1 0 0 A/ s V GS = 0 V NOTES (1) Measured under pulsed conditions. Pulse width ⱕ 300s; duty cycle ⱕ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - MAY 2004 SEMICONDUCTORS 4 ZXMHN6A07T8 TYPICAL CHARACTERISTICS ISSUE 2 - MAY 2004 5 SEMICONDUCTORS ZXMHN6A07T8 TYPICAL CHARACTERISTICS ISSUE 2 - MAY 2004 SEMICONDUCTORS 6 ZXMHN6A07T8 PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS DIM Millimeters Inches DIM Millimeters Inches Min Max Typ. Min Max Typ. Min Max Typ. Min Max Typ. A - 1.7 - - 0.067 - e1 - - 4.59 - - 0.18 07 A1 0.02 0.1 - 0.008 0.004 - e2 - - 1.53 - - 0.06 02 b - - 0.7 0.0275 He 6.7 7.3 - 0.264 0.287 - - - c 0.24 0.32 - 0.009 0.013 - Lp 0.9 - - 0.035 - - D 6.3 6.7 - 0.248 0.264 - ␣ - 15° - - 15° - E 3.3 3.7 - 0.130 0.145 -  - - 10° - - 10° ©Zetex Semiconductors plc 2004 Europe Americas Asia Pacific Corporate Headquaters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - MAY 2004 7 SEMICONDUCTORS