ZXMN10A08DN8 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.25 ID = 2.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • DC - DC converters • Power management functions • Disconnect switches • Motor control PINOUT ORDERING INFORMATION DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN10A08DN8TA 7” 12mm 500 units ZXMN10A08DN8TC 13” 12mm 2,500 units DEVICE MARKING Top View • ZXMN 10A08D ISSUE 4 - JANUARY 2005 1 SEMICONDUCTORS ZXMN10A08DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-source voltage V DSS Gate source voltage V GS Continuous drain current V GS =10V; T A =25°C (b) V GS =10V; T A =70°C (b) V GS =10V; T A =25°C (a) ID Pulsed drain current (c) I DM Continuous source current (body diode) Pulsed source current (body diode) (c) (b) IS LIMIT UNIT 100 V 20 V 2.1 1.7 1.6 A 9 A 2.6 A I SM 9 A Power dissipation at T A =25°C (a) Linear derating factor PD 1.25 10 W mW/°C Power dissipation at T A =25°C (b) Linear derating factor PD 1.8 14.5 W mW/°C Operating and storage temperature range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to ambient (a) R θJA 100 °C/W Junction to ambient (b) R θJA 69 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph ISSUE 4 - JANUARY 2005 SEMICONDUCTORS 2 ZXMN10A08DN8 TYPICAL CHARACTERISTICS ISSUE 4 - JANUARY 2005 3 SEMICONDUCTORS ZXMN10A08DN8 ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. 100 TYP. MAX. UNIT CONDITIONS. STATIC Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I DSS Gate-body leakage I GSS Gate-source threshold voltage V GS(th) Static drain-source on-state resistance (1) R DS(on) Forward transconductance (1)(3) g fs DYNAMIC V I D =250A, V GS =0V V DS =100V, V GS =0V 0.5 A 100 nA V GS =⫾20V, V DS =0V V I =250A, V DS = V GS ⍀ ⍀ V GS =10V, I D =3.2A V GS =6V, I D =2.6A 5.0 S V DS =15V,I D =3.2A 2.0 0.25 0.30 D (3) Input capacitance C iss 405 pF Output capacitance C oss 28.2 pF Reverse transfer capacitance C rss 14.2 pF ns SWITCHING V DS =50 V, V GS =0V, f=1MHz (2) (3) Turn-on delay time t d(on) 3.4 Rise time tr 2.2 ns Turn-off delay time t d(off) 8 ns Fall time tf 3.2 ns Gate charge Qg 4.2 nC Total gate charge Qg 7.7 nC Gate-source charge Q gs 1.8 nC Gate-drain charge Q gd 2.1 nC Diode forward voltage (1) V SD 0.87 Reverse recovery time (3) t rr Reverse recovery charge (3) Q rr V DD =30V, I D =1.2A R G ≅6.0⍀, V GS =10V V DS =50V,V GS =5V, I D =1.2A V DS =50V,V GS =10V, I D =1.2A SOURCE-DRAIN DIODE 0.95 V T J =25°C, I S =3.2A, V GS =0V 27 ns 32 nC T J =25°C, I F =1.2A, di/dt= 100A/s NOTES: (1) Measured under pulsed conditions. Width = 300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 4 - JANUARY 2005 SEMICONDUCTORS 4 ZXMN10A08DN8 TYPICAL CHARACTERISTICS ISSUE 4 - JANUARY 2005 5 SEMICONDUCTORS ZXMN10A08DN8 TYPICAL CHARACTERISTICS ISSUE 4 - JANUARY 2005 SEMICONDUCTORS 6 ZXMN10A08DN8 PACKAGE OUTLINE CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES PACKAGE DIMENSIONS Millimeters Inches DIM Millimeters Inches DIM Min Max Min Max Min Max A 1.35 1.75 0.053 0.069 e A1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020 D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010 H 5.80 6.20 0.228 0.244 ⍜ 0° 8° 0° 8° E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 - - - - - 1.27 BSC Min Max 0.050 BSC © Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on towww.zetex.com ISSUE 4 - JANUARY 2005 7 SEMICONDUCTORS