DIODES ZXMN10A08E6TC

A Product Line of
Diodes Incorporated
ZXMN10A08E6
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Product Summary
V(BR)DSS
Features and Benefits
ID
RDS(on)
100V
TA = 25°C
0.25Ω
•
Low on-resistance
•
Fast switching speed
•
Qualified to AEC-Q101 Standards for High Reliability
1.9A
Mechanical Data
•
Case: SOT23-6
Description and Applications
•
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, this makes it ideal for
high efficiency power management applications.
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
•
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.015 grams (approximate)
•
DC-DC Converters
•
Power management functions
•
Disconnect Switches
•
Motor control
SOT23-6
D
D
D
D
D
G
S
TOP VIEW
G
S
Package Pin Out
Equivalent Circuit
Ordering Information
Product
ZXMN10A08E6TA
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
ZXMN10A08E6TC
13
8
10,000
Marking Information
10A8
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
10A8 = Product Type Marking Code
1 of 8
www.diodes.com
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A08E6
Maximum Ratings
@TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGS
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
(Note 2)
VGS = 10V TA = 70°C (Note 2)
(Note 1)
Pulsed Drain current (Note 3)
Continuous Source current (Body diode) (Note 2)
Pulsed Source current (Body diode) (Note 3)
ID
IDM
IS
ISM
Value
100
±20
1.9
1.5
1.5
8.6
2.5
8.6
Unit
V
V
Value
1.1
8.8
1.7
13.6
113
73
-55 to 150
Unit
W
mW/°C
W
mW/°C
A
A
A
A
Thermal Characteristics
Characteristic
Power dissipation
Linear derating factor
Power dissipation
Linear derating factor
Thermal Resistance, Junction to ambient
Operating and storage temperature range
Notes:
Symbol
(Note 1)
PD
(Note 2)
(Note 1)
(Note 2)
RθJA
TJ, TSTG
°C/W
°C
1. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
2. For a device surface mounted on FR4 PCB measured at t ≤ 5 sec.
3. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse current 300μs - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
2 of 8
www.diodes.com
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A08E6
Thermal Characteristics
10
Max Power Dissipation (W)
1.2
IC Drain Current (A)
RDS(on)
Limited
1
DC
1s
100m
100ms
10ms
10m
Single Pulse
Tamb=25°C
100m
1ms
100µs
1
10
100
VDS Drain-Source Voltage (V)
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100 120 140 160
Temperature (°C)
Safe Operating Area
Derating Curve
Tamb=25°C
100
Maximum Power (W)
Thermal Resistance (°C/W)
120
80
60
D=0.5
40
D=0.2
Single Pulse
20
D=0.05
D=0.1
100µ
1m
10m 100m
1
10
100
1k
10
1
100µ
Pulse Width (s)
Document Number DS31909 Rev. 7 - 2
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
ZXMN10A08E6
Single Pulse
T amb=25°C
100
Pulse Power Dissipation
3 of 8
www.diodes.com
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A08E6
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
V(BR)DSS
100
⎯
⎯
V
ID = 250μA, VGS = 0V
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
0.5
μA
VDS = 100V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS = ±20V, VDS = 0V
VGS(th)
2
⎯
4
V
ID = 250μA, VDS = VGS
RDS (ON)
⎯
⎯
0.25
0.30
Ω
VGS = 10V, ID = 3.2A
VGS = 6V, ID = 2.6A
Forward Transconductance (Notes 4 & 6)
gfs
⎯
5.0
⎯
S
VDS = 15V, ID = 3.2A
Diode Forward Voltage (Note 4)
VSD
⎯
0.87
0.95
V
IS = 3.2A, VGS = 0V
Reverse recovery time (Note 6)
trr
⎯
27
⎯
ns
Reverse recovery charge (Note 6)
Qrr
⎯
32
⎯
nC
Input Capacitance
Ciss
⎯
405
⎯
pF
Output Capacitance
Coss
⎯
28.2
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
14.2
⎯
pF
Total Gate Charge
Qg
⎯
4.2
⎯
nC
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 4)
IF = 1.2A, di/dt = 100A/μs
DYNAMIC CHARACTERISTICS (Note 6)
Total Gate Charge
Qg
⎯
7.7
⎯
nC
Gate-Source Charge
Qgs
⎯
1.8
⎯
nC
Gate-Drain Charge
Qgd
⎯
2.1
⎯
nC
Turn-On Delay Time (Note 5)
tD(on)
⎯
3.4
⎯
ns
Turn-On Rise Time (Note 5)
tr
⎯
2.2
⎯
ns
Turn-Off Delay Time (Note 5)
tD(off)
⎯
8
⎯
ns
tf
⎯
3.2
⎯
ns
Turn-Off Fall Time (Note 5)
Notes:
VDS = 50V, VGS = 0V
f = 1MHz
VDS = 50V, VGS = 5V
ID = 1.2A
VDS = 50V, VGS = 10V
ID = 1.2A
VDD = 30V, VGS = 10V
ID = 1.2A, RG ≅ 6.0Ω
4. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
5. Switching characteristics are independent of operating junction temperatures.
6. For design aid only, not subject to production testing.
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
4 of 8
www.diodes.com
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A08E6
Typical Characteristics
10V
T = 25°C
10
5V
4.5V
1
4V
VGS
0.1
3.5V
0.01
5V
4.5V
4V
1
3.5V
0.1
3V
VGS
1
10
0.1
Output Characteristics
Output Characteristics
Normalised RDS(on) and VGS(th)
T = 25°C
0.1
T = -55°C
3
4
2.0
VGS = 10V
1.8
ID = 3.2A
RDS(on)
1.6
1.4
1.2
1.0
VGS(th)
0.8
VGS = VDS
0.6
ID = 250uA
0.4
-50
5
VGS Gate-Source Voltage (V)
0
50
100
150
Tj Junction Temperature (°C)
Typical Transfer Characteristics
Normalised Curves v Temperature
10
3.5V
VGS
T = 25°C
4V
4.5V
10
5V
1
10V
ISD Reverse Drain Current (A)
100
0.1
0.01
10
VDS Drain-Source Voltage (V)
T = 150°C
1
1
VDS Drain-Source Voltage (V)
VDS = 10V
RDS(on) Drain-Source On-Resistance (Ω)
10V
T = 150°C
0.01
0.1
ID Drain Current (A)
ID Drain Current (A)
ID Drain Current (A)
10
T = 150°C
1
T = 25°C
0.1
0.01
0.1
1
10
On-Resistance v Drain Current
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
ID Drain Current (A)
Source-Drain Diode Forward Voltage
5 of 8
www.diodes.com
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A08E6
Typical Characteristics - continued
10
C Capacitance (pF)
VGS = 0V
500
f = 1MHz
400
CISS
300
COSS
CRSS
200
100
0
0.1
1
10
100
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
VGS Gate-Source Voltage (V)
600
ID = 1.2A
8
6
4
2
VDS = 50V
0
0
1
2
3
4
5
6
7
8
Q - Charge (nC)
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
QG
50k
12V
VG
Q GS
Same as
D.U.T
Q GD
V DS
IG
D.U.T
ID
V GS
Charge
Basic gate charge waveform
Gate charge test circuit
V DS
90%
RD
V GS
V DS
RG
VDD
10%
V GS
td(on)
tr
t(on)
td(off)
tr
t(on)
Switching time waveforms
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
Switching time test circuit
6 of 8
www.diodes.com
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A08E6
Package Outline Dimensions
DIM
A
A1
A2
b
C
D
E
E1
L
e
e1
L
Millimeters
Min.
0.90
0.00
0.90
0.35
0.09
2.80
2.60
1.50
0.10
0.95 REF
1.90 REF
0°
Inches
Max.
1.45
0.15
1.30
0.50
0.20
3.00
3.00
1.75
0.60
10°
Min.
0.35
0
0.035
0.014
0.0035
0.110
0.102
0.059
0.004
0.037 REF
0.074 REF
0°
Max.
0.057
0.006
0.051
0.019
0.008
0.118
0.118
0.069
0.002
10°
Suggested Pad Layout
0.95
0.037
1.06
0.042
2.2
0.087
0.65
0.026
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
7 of 8
www.diodes.com
mm
inches
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A08E6
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
8 of 8
www.diodes.com
October 2009
© Diodes Incorporated