A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V(BR)DSS Features and Benefits ID RDS(on) 100V TA = 25°C 0.25Ω • Low on-resistance • Fast switching speed • Qualified to AEC-Q101 Standards for High Reliability 1.9A Mechanical Data • Case: SOT23-6 Description and Applications • This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, this makes it ideal for high efficiency power management applications. Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram • Terminals: Matte Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Weight: 0.015 grams (approximate) • DC-DC Converters • Power management functions • Disconnect Switches • Motor control SOT23-6 D D D D D G S TOP VIEW G S Package Pin Out Equivalent Circuit Ordering Information Product ZXMN10A08E6TA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 ZXMN10A08E6TC 13 8 10,000 Marking Information 10A8 ZXMN10A08E6 Document Number DS31909 Rev. 7 - 2 10A8 = Product Type Marking Code 1 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGS Drain-Source voltage Gate-Source voltage Continuous Drain current (Note 2) VGS = 10V TA = 70°C (Note 2) (Note 1) Pulsed Drain current (Note 3) Continuous Source current (Body diode) (Note 2) Pulsed Source current (Body diode) (Note 3) ID IDM IS ISM Value 100 ±20 1.9 1.5 1.5 8.6 2.5 8.6 Unit V V Value 1.1 8.8 1.7 13.6 113 73 -55 to 150 Unit W mW/°C W mW/°C A A A A Thermal Characteristics Characteristic Power dissipation Linear derating factor Power dissipation Linear derating factor Thermal Resistance, Junction to ambient Operating and storage temperature range Notes: Symbol (Note 1) PD (Note 2) (Note 1) (Note 2) RθJA TJ, TSTG °C/W °C 1. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 2. For a device surface mounted on FR4 PCB measured at t ≤ 5 sec. 3. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse current 300μs - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph ZXMN10A08E6 Document Number DS31909 Rev. 7 - 2 2 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Thermal Characteristics 10 Max Power Dissipation (W) 1.2 IC Drain Current (A) RDS(on) Limited 1 DC 1s 100m 100ms 10ms 10m Single Pulse Tamb=25°C 100m 1ms 100µs 1 10 100 VDS Drain-Source Voltage (V) 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 140 160 Temperature (°C) Safe Operating Area Derating Curve Tamb=25°C 100 Maximum Power (W) Thermal Resistance (°C/W) 120 80 60 D=0.5 40 D=0.2 Single Pulse 20 D=0.05 D=0.1 100µ 1m 10m 100m 1 10 100 1k 10 1 100µ Pulse Width (s) Document Number DS31909 Rev. 7 - 2 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance ZXMN10A08E6 Single Pulse T amb=25°C 100 Pulse Power Dissipation 3 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage V(BR)DSS 100 ⎯ ⎯ V ID = 250μA, VGS = 0V Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 0.5 μA VDS = 100V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V VGS(th) 2 ⎯ 4 V ID = 250μA, VDS = VGS RDS (ON) ⎯ ⎯ 0.25 0.30 Ω VGS = 10V, ID = 3.2A VGS = 6V, ID = 2.6A Forward Transconductance (Notes 4 & 6) gfs ⎯ 5.0 ⎯ S VDS = 15V, ID = 3.2A Diode Forward Voltage (Note 4) VSD ⎯ 0.87 0.95 V IS = 3.2A, VGS = 0V Reverse recovery time (Note 6) trr ⎯ 27 ⎯ ns Reverse recovery charge (Note 6) Qrr ⎯ 32 ⎯ nC Input Capacitance Ciss ⎯ 405 ⎯ pF Output Capacitance Coss ⎯ 28.2 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 14.2 ⎯ pF Total Gate Charge Qg ⎯ 4.2 ⎯ nC ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 4) IF = 1.2A, di/dt = 100A/μs DYNAMIC CHARACTERISTICS (Note 6) Total Gate Charge Qg ⎯ 7.7 ⎯ nC Gate-Source Charge Qgs ⎯ 1.8 ⎯ nC Gate-Drain Charge Qgd ⎯ 2.1 ⎯ nC Turn-On Delay Time (Note 5) tD(on) ⎯ 3.4 ⎯ ns Turn-On Rise Time (Note 5) tr ⎯ 2.2 ⎯ ns Turn-Off Delay Time (Note 5) tD(off) ⎯ 8 ⎯ ns tf ⎯ 3.2 ⎯ ns Turn-Off Fall Time (Note 5) Notes: VDS = 50V, VGS = 0V f = 1MHz VDS = 50V, VGS = 5V ID = 1.2A VDS = 50V, VGS = 10V ID = 1.2A VDD = 30V, VGS = 10V ID = 1.2A, RG ≅ 6.0Ω 4. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2% 5. Switching characteristics are independent of operating junction temperatures. 6. For design aid only, not subject to production testing. ZXMN10A08E6 Document Number DS31909 Rev. 7 - 2 4 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Typical Characteristics 10V T = 25°C 10 5V 4.5V 1 4V VGS 0.1 3.5V 0.01 5V 4.5V 4V 1 3.5V 0.1 3V VGS 1 10 0.1 Output Characteristics Output Characteristics Normalised RDS(on) and VGS(th) T = 25°C 0.1 T = -55°C 3 4 2.0 VGS = 10V 1.8 ID = 3.2A RDS(on) 1.6 1.4 1.2 1.0 VGS(th) 0.8 VGS = VDS 0.6 ID = 250uA 0.4 -50 5 VGS Gate-Source Voltage (V) 0 50 100 150 Tj Junction Temperature (°C) Typical Transfer Characteristics Normalised Curves v Temperature 10 3.5V VGS T = 25°C 4V 4.5V 10 5V 1 10V ISD Reverse Drain Current (A) 100 0.1 0.01 10 VDS Drain-Source Voltage (V) T = 150°C 1 1 VDS Drain-Source Voltage (V) VDS = 10V RDS(on) Drain-Source On-Resistance (Ω) 10V T = 150°C 0.01 0.1 ID Drain Current (A) ID Drain Current (A) ID Drain Current (A) 10 T = 150°C 1 T = 25°C 0.1 0.01 0.1 1 10 On-Resistance v Drain Current ZXMN10A08E6 Document Number DS31909 Rev. 7 - 2 0.4 0.6 0.8 1.0 VSD Source-Drain Voltage (V) ID Drain Current (A) Source-Drain Diode Forward Voltage 5 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Typical Characteristics - continued 10 C Capacitance (pF) VGS = 0V 500 f = 1MHz 400 CISS 300 COSS CRSS 200 100 0 0.1 1 10 100 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) 600 ID = 1.2A 8 6 4 2 VDS = 50V 0 0 1 2 3 4 5 6 7 8 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 50k 12V VG Q GS Same as D.U.T Q GD V DS IG D.U.T ID V GS Charge Basic gate charge waveform Gate charge test circuit V DS 90% RD V GS V DS RG VDD 10% V GS td(on) tr t(on) td(off) tr t(on) Switching time waveforms ZXMN10A08E6 Document Number DS31909 Rev. 7 - 2 Switching time test circuit 6 of 8 www.diodes.com October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 Package Outline Dimensions DIM A A1 A2 b C D E E1 L e e1 L Millimeters Min. 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.10 0.95 REF 1.90 REF 0° Inches Max. 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.60 10° Min. 0.35 0 0.035 0.014 0.0035 0.110 0.102 0.059 0.004 0.037 REF 0.074 REF 0° Max. 0.057 0.006 0.051 0.019 0.008 0.118 0.118 0.069 0.002 10° Suggested Pad Layout 0.95 0.037 1.06 0.042 2.2 0.087 0.65 0.026 ZXMN10A08E6 Document Number DS31909 Rev. 7 - 2 7 of 8 www.diodes.com mm inches October 2009 © Diodes Incorporated A Product Line of Diodes Incorporated ZXMN10A08E6 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2009, Diodes Incorporated www.diodes.com ZXMN10A08E6 Document Number DS31909 Rev. 7 - 2 8 of 8 www.diodes.com October 2009 © Diodes Incorporated