ZXMN2AM832 MPPS™ Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Users will also gain several other key benefits: Performance capability equivalent to much larger packages 3x2mm Dual Die MLP Improved circuit efficiency & power levels PCB area and device placement savings Reduced component count FEATURES • Low On - Resistance • Fast switching speed • Low threshold • Low gate drive • 3mm x 2mm MLP APPLICATIONS • DC-DC Converters • Power Management Functions PINOUT • Disconnection switches 5 • Motor Control 6 D2 D2 7 8 D1 D1 ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMN2AM832TA 7’‘ 8mm 3000 units ZXMN2AM832TC 13’‘ 8mm 10000 units S2 G2 4 3 S1 G1 2 1 3mm x 2mm Dual MLP underside view DEVICE MARKING DNA ISSUE 2 - JULY 2003 1 SEMICONDUCTORS ZXMN2AM832 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS 20 V Gate-Source Voltage V GS ⫾20 V Continuous Drain Current @V GS =10V; T A =25⬚C (b) (f) @V GS =10V; T A =70⬚C (b) (f) ID 3.7 A 3.0 A @V GS =10V; T A =25⬚C (a) (f) N-Channel UNIT 2.9 A Pulsed Drain Current I DM 13 A Continuous Source Current (Body Diode) (b) (f) IS 3.0 A Pulsed Source Current (Body Diode) I SM 13 A Power Dissipation at TA=25°C (a) (f) Linear Derating Factor PD 1.5 W 12 mW/°C Power Dissipation at TA=25°C (b) (f) Linear Derating Factor PD 2.45 W 19.6 mW/°C Power Dissipation at TA=25°C (c) (f) Linear Derating Factor PD Power Dissipation at TA=25°C ( d) (f) Linear Derating Factor 1 W 8 mW/°C PD 1.13 W 9 mW/°C Power Dissipation at TA=25°C (d) (g) Linear Derating Factor PD 1.7 W 13.6 mW/°C Power Dissipation at TA=25°C (e) (g) Linear Derating Factor PD Operating and Storage Temperature Range T j :T stg 3 W 24 mW/°C -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a)(f) R ⍜JA 83.3 °C/W Junction to Ambient (b)(f) R ⍜JA 51 °C/W Junction to Ambient (c)(f) R ⍜JA 125 °C/W Junction to Ambient (d)(f) R ⍜JA 111 °C/W Junction to Ambient (d)(g) R ⍜JA 73.5 °C/W Junction to Ambient (e)(g) R ⍜JA 41.7 °C/W Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW. ISSUE 2 - JULY 2003 SEMICONDUCTORS 2 ZXMN2AM832 TYPICAL CHARACTERISTICS ISSUE 2 - JULY 2003 3 SEMICONDUCTORS ZXMN2AM832 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS 20 Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State R DS(on) TYP. MAX. UNIT CONDITIONS. STATIC I D =250A, V GS =0V 1 A V DS =20V, V GS =0V 100 nA V GS =±12V, V DS =0V V I =250A, V DS =V GS 0.12 ⍀ V GS =4.5V, I D =4A 0.30 ⍀ V GS =2.5V, I D =1.5A V DS =10V,I D =4A 0.7 0.09 Resistance (1) (3) V g fs 6.2 S Input Capacitance C iss 299 pF Output Capacitance C oss 60 pF Reverse Transfer Capacitance C rss 33 pF Forward Transconductance DYNAMIC D (3) SWITCHING V DS =15 V, V GS =0V, f=1MHz (2) (3) Turn-On Delay Time t d(on) 2.31 ns Rise Time tr 2.60 ns Turn-Off Delay Time t d(off) 1.55 ns Fall Time tf 1.31 ns Total Gate Charge Qg 3.1 nC Gate-Source Charge Q gs 0.7 nC Gate-Drain Charge Q gd 1.0 nC Diode Forward Voltage (1) V SD 0.9 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr V DD =10V, I D =4A R G ≅6.0⍀, V GS =5V V DS =10V,V GS =4.5V, I D =4A SOURCE-DRAIN DIODE 0.95 V T J =25°C, I S =3.2A, V GS =0V 23 ns 5.65 nC T J =25°C, I F =4A, di/dt= 100A/s NOTES (1) Measured under pulsed conditions. Width ⱕ300s. Duty cycle ⱕ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 2 - JULY 2003 SEMICONDUCTORS 4 ZXMN2AM832 10V T = 25°C 10 4.5V 3V 2.5V ID Drain Current (A) ID Drain Current (A) TYPICAL CHARACTERISTICS 2V 1 VGS 1.5V 0.1 0.1 1 1 1.5V VGS 0.1 1V 10 0.1 1.6 Normalised RDS(on) and VGS(th) VDS = 10V 1 T = 150°C T = 25°C 1.5 2.0 2.5 3.0 3.5 1.0 ISD Reverse Drain Current (A) 3V 1 4.5V 0.1 10V T = 25°C 0.1 1 ID Drain Current (A) VGS(th) 0.8 VGS = VDS ID = 250uA 0.6 0.4 -50 0 50 100 150 Normalised Curves v Temperature VGS 2.5V RDS(on) 1.2 Tj Junction Temperature (°C) Typical Transfer Characteristics 2V VGS = 4.5V ID = 4A 1.4 VGS Gate-Source Voltage (V) 1.5V 10 Output Characteristics 10 ID Drain Current (A) 1 VDS Drain-Source Voltage (V) Output Characteristics 0.1 1.0 4.5V 3V 2.5V 2V VDS Drain-Source Voltage (V) RDS(on) Drain-Source On-Resistance 10V T = 150°C 10 10 10 T = 150°C 1 T = 25°C 0.1 0.4 0.6 0.8 1.0 1.2 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance v Drain Current ISSUE 2 - JULY 2003 5 SEMICONDUCTORS ZXMN2AM832 VGS = 0V f = 1MHz 400 VGS Gate-Source Voltage (V) C Capacitance (pF) TYPICAL CHARACTERISTICS CISS COSS 200 CRSS 0 0.1 1 10 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage 4.5 4.0 ID = 4A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 VDS = 10V 1 2 3 4 Q - Charge (nC) Gate-Source Voltage v Gate Charge ISSUE 2 - JULY 2003 SEMICONDUCTORS 6 ZXMN2AM832 MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES MLP832 PACKAGE DIMENSIONS MILLIMETRES DIM MIN. INCHES MAX. MIN. MILLIMETRES DIM MAX. MIN. MAX. INCHES MIN. MAX. A 0.80 1.00 0.031 0.039 e 0.65 REF 0.0256 BSC A1 0.00 0.05 0.00 0.002 E 2.00 BSC 0.0787 BSC A2 0.65 0.75 0.0255 0.0295 E2 0.43 0.63 0.017 0.0249 A3 0.15 0.25 0.006 0.0098 E4 0.16 0.36 0.006 0.014 b 0.24 0.34 0.009 0.013 L 0.20 0.45 0.0078 0.0157 b1 0.17 0.30 0.0066 0.0118 L2 0.125 0.00 0.005 D D2 3.00 BSC 0.82 0.118 BSC 1.02 0.032 r ⍜ 0.040 0.075 BSC 0⬚ 12⬚ 0.0029 BSC 0⬚ 12⬚ © Zetex plc 2003 Americas Asia Pacific Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - JULY 2003 7 SEMICONDUCTORS