Product specification ZXMN2B14FH 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary RDS(on) (⍀) ID (A) 0.055 @ VGS= 4.5V 4.3 0.075 @ VGS= 2.5V 3.7 0.100 @ VGS= 1.8V 3.2 V(BR)DSS 20 Description This new generation of trench MOSFETs from TY features low onresistance achievable with low gate drive. Features D • Low on-resistance • Fast switching speed • Low gate drive capability • SOT23 package G S Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control S D Ordering information G Device Reel size (inches) Tape width (mm) Quantity per reel 7 8 3,000 ZXMN2B14FHTA Top view Device marking 2B4 http://www.twtysemi.com [email protected] 1 of 3 Product specification ZXMN2B14FH Absolute maximum ratings Parameter Symbol Limit Unit Drain-source voltage VDSS 20 V Gate-source voltage VGS ±8 V ID 4.3 A Continuous drain current @ VGS= 4.5V; Tamb=25°C (b) @ VGS= 4.5V; Tamb=70°C (b) 3.5 @ VGS= 4.5V; Tamb=25°C (a) 3.5 Pulsed drain current (c) IDM 21 A IS 2.4 A Pulsed source current (body diode) (c) ISM 21 A Power dissipation at Tamb=25°C (a) PD 1 W 8 mW/°C 1.5 W 12 mW/°C Tj, Tstg -55 to +150 °C Symbol Limit Unit Junction to ambient R⍜JA 125 °C/W Junction to ambient R⍜JA 82 °C/W Continuous source current (body diode) (b) Linear derating factor Power dissipation at Tamb =25°C (b) PD Linear derating factor Operating and storage temperature range Thermal resistance Parameter NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t ⱕ5 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction temperature. http://www.twtysemi.com [email protected] 2 of 3 Product specification ZXMN2B14FH Electrical characteristics (at Tamb = 25°C unless otherwise stated) Parameter Symbol Min. Drain-source breakdown voltage V(BR)DSS 20 Zero gate voltage drain current IDSS Gate-body leakage IGSS Gate-source threshold voltage VGS(th) Static drain-source on-state resistance (*) RDS(on) Typ. Max. Unit Conditions Static 0.4 V ID= 250A, VGS=0V 1 A VDS= 20V, VGS=0V 100 nA VGS=±8V, VDS=0V 1.0 V ID= 250A, VDS=VGS 0.055 ⍀ VGS= 4.5V, ID= 3.5A 0.075 ⍀ VGS= 2.5V, ID= 3A 0.100 ⍀ VGS= 1.8V, ID= 2.6A gfs 11 S VDS= 10V, ID= 3.5A Input capacitance Ciss 872 pF Output capacitance Coss 145 pF VDS= 10V, VGS=0V f=1MHz Reverse transfer capacitance Crss 90 pF Turn-on-delay time td(on) 3.7 ns Rise time tr 5.2 ns Turn-off delay time td(off) 30 ns Fall time tf 5.5 ns Total gate charge Qg 11 nC Gate-source charge Qgs 1.4 nC Gate drain charge Qgd 2.1 nC Diode forward voltage(*) VSD 0.69 Reverse recovery time(‡) trr Reverse recovery charge(‡) Qrr Forward transconductance(*) (‡) Dynamic(‡) Switching (†) (‡) VDD= 10V, VGS= 4.5V ID= 1A RG ≈ 6.0⍀ VDS= 10V, VGS= 4.5V ID= 4.0A Source-drain diode 0.95 V Tj=25°C, IS= 1.45A, VGS=0V 9.4 ns 2.8 nC Tj=25°C, IF= 2.4A, di/dt=100A/s NOTES: (*) Measured under pulsed conditions. Pulse width ⱕ300s; duty cycle ⱕ2%. (†) Switching characteristics are independent of operating junction temperature. (‡) For design aid only, not subject to production testing. http://www.twtysemi.com [email protected] 3 of 3