TYSEMI ZXMN2B14FHTA

Product specification
ZXMN2B14FH
20V SOT23 N-channel enhancement mode MOSFET
with low gate drive capability
Summary
RDS(on) (⍀)
ID (A)
0.055 @ VGS= 4.5V
4.3
0.075 @ VGS= 2.5V
3.7
0.100 @ VGS= 1.8V
3.2
V(BR)DSS
20
Description
This new generation of trench MOSFETs from TY features low onresistance achievable with low gate drive.
Features
D
•
Low on-resistance
•
Fast switching speed
•
Low gate drive capability
•
SOT23 package
G
S
Applications
•
DC-DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
S
D
Ordering information
G
Device
Reel size
(inches)
Tape width
(mm)
Quantity per reel
7
8
3,000
ZXMN2B14FHTA
Top view
Device marking
2B4
http://www.twtysemi.com
[email protected]
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Product specification
ZXMN2B14FH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDSS
20
V
Gate-source voltage
VGS
±8
V
ID
4.3
A
Continuous drain current
@ VGS= 4.5V; Tamb=25°C (b)
@ VGS= 4.5V; Tamb=70°C (b)
3.5
@ VGS= 4.5V; Tamb=25°C (a)
3.5
Pulsed drain current (c)
IDM
21
A
IS
2.4
A
Pulsed source current (body diode) (c)
ISM
21
A
Power dissipation at Tamb=25°C (a)
PD
1
W
8
mW/°C
1.5
W
12
mW/°C
Tj, Tstg
-55 to +150
°C
Symbol
Limit
Unit
Junction to ambient
R⍜JA
125
°C/W
Junction to ambient
R⍜JA
82
°C/W
Continuous source current (body diode) (b)
Linear derating factor
Power dissipation at Tamb =25°C (b)
PD
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction
temperature.
http://www.twtysemi.com
[email protected]
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Product specification
ZXMN2B14FH
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Drain-source breakdown voltage
V(BR)DSS
20
Zero gate voltage drain current
IDSS
Gate-body leakage
IGSS
Gate-source threshold voltage
VGS(th)
Static drain-source on-state
resistance (*)
RDS(on)
Typ.
Max. Unit Conditions
Static
0.4
V
ID= 250␮A, VGS=0V
1
␮A
VDS= 20V, VGS=0V
100
nA
VGS=±8V, VDS=0V
1.0
V
ID= 250␮A, VDS=VGS
0.055
⍀
VGS= 4.5V, ID= 3.5A
0.075
⍀
VGS= 2.5V, ID= 3A
0.100
⍀
VGS= 1.8V, ID= 2.6A
gfs
11
S
VDS= 10V, ID= 3.5A
Input capacitance
Ciss
872
pF
Output capacitance
Coss
145
pF
VDS= 10V, VGS=0V
f=1MHz
Reverse transfer capacitance
Crss
90
pF
Turn-on-delay time
td(on)
3.7
ns
Rise time
tr
5.2
ns
Turn-off delay time
td(off)
30
ns
Fall time
tf
5.5
ns
Total gate charge
Qg
11
nC
Gate-source charge
Qgs
1.4
nC
Gate drain charge
Qgd
2.1
nC
Diode forward voltage(*)
VSD
0.69
Reverse recovery time(‡)
trr
Reverse recovery charge(‡)
Qrr
Forward transconductance(*) (‡)
Dynamic(‡)
Switching (†) (‡)
VDD= 10V, VGS= 4.5V
ID= 1A
RG ≈ 6.0⍀
VDS= 10V, VGS= 4.5V
ID= 4.0A
Source-drain diode
0.95
V
Tj=25°C, IS= 1.45A,
VGS=0V
9.4
ns
2.8
nC
Tj=25°C, IF= 2.4A,
di/dt=100A/␮s
NOTES:
(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
http://www.twtysemi.com
[email protected]
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