ZETEX ZXMN6A09DN8TC

ZXMN6A09DN8
DUAL 60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=60V; RDS(ON)=0.045⍀
D=5.2A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage,
power management applications.
SO8
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
TAPE WIDTH
QUANTITY
PER REEL
ZXMN6A09DN8TA
7”
12mm
500 units
ZXMN6A09DN8TC
13”
12mm
2500 units
DEVICE MARKING
• ZXMN
6A09D
PROVISIONAL ISSUE D - AUGUST 2001
1
Top View
ZXMN6A09DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
V DSS
LIMIT
60
UNIT
V
Gate Source Voltage
V GS
⫾20
V
Continuous Drain Current (V GS =10V; T A =25°C)(b)(d)
(V GS =10V; T A =70°C)(b)(d)
(V GS =10V; T A =25°C)(a)(d)
ID
5.2
4.1
3.9
A
Pulsed Drain Current (c)
I DM
17.6
A
Continuous Source Current (Body Diode) (b)
IS
3.5
A
Pulsed Source Current (Body Diode)(c)
I SM
15
A
Power Dissipation at T A =25°C (a)(d)
Linear Derating Factor
PD
1.25
10
W
mW/°C
Power Dissipation at T A =25°C (a)(e)
Linear Derating Factor
PD
1.81
14.5
W
mW/°C
Power Dissipation at T A =25°C (b)(d)
Linear Derating Factor
PD
2.16
17.3
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)(d)
R θJA
100
°C/W
Junction to Ambient (a)(e)
R θJA
69
°C/W
Junction to Ambient (b)(d)
R θJA
58
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum
junction temperature.
(d) For device with one active die
(e) For device with two active die running at equal power.
PROVISIONAL ISSUE D - AUGUST 2001
2
ZXMN6A09DN8
THERMAL CHARACTERISTICS
RDS(on)
Limit
1
DC
1s
100m
10m
100ms
10ms
Single Pulse
Tamb=25˚ C
One active die
100m
1ms
100µs
1
10
100
2.0
Max Power Dissipation (W)
ID Drain Current (A)
10
1.8
1.6
1.4
Two active die
1.2
1.0
0.8
0.6
One active die
0.4
0.2
0.0
0
20
VDS Drain-Source Voltage (V)
Maximum Power (W)
Thermal Resistance (˚ C/W)
D=0.05
D=0.1
10
80
100 120
140 160
Derating Curve
Single Pulse
1
60
Temperature (˚ C)
Safe Operating Area
110
Tamb=25˚ C
100
90 One active die
80
70
D=0.5
60
50
40
D=0.2
30
20
10
0
100µ 1m 10m 100m
40
100
Single Pulse
Tamb=25˚ C
One active die
100
1k
10
1
100µ
Pulse Width (s)
1m
10m 100m
1
10
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
PROVISIONAL ISSUE D - AUGUST 2001
3
100
1k
ZXMN6A09DN8
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State Resistance
(1)
R DS(on)
Forward Transconductance (3)
g fs
Input Capacitance
60
V
I D =250µA, V GS =0V
1
µA
V DS =60V, V GS =0V
100
nA
1.0
V GS =±20V, V DS =0V
V
I =250µA, V DS = V GS
Ω
Ω
V GS =10V, I D =8.2A
V GS =4.5V, I D =7.4A
15
S
V DS =15V,I D =8.2A
C iss
1407
pF
Output Capacitance
C oss
121
pF
Reverse Transfer Capacitance
C rss
59
pF
0.045
0.075
D
DYNAMIC (3)
V DS =40 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
Turn-On Delay Time
t d(on)
4.9
ns
Rise Time
tr
5.0
ns
Turn-Off Delay Time
t d(off)
25.3
ns
Fall Time
tf
4.6
ns
Gate Charge
Qg
12.4
nC
Total Gate Charge
Qg
24.2
nC
Gate-Source Charge
Q gs
5.2
nC
Gate-Drain Charge
Q gd
3.5
nC
Diode Forward Voltage (1)
V SD
0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
V DD =15V, I D =3.5A
R G =6.0Ω, V GS =10V
(refer to test
circuit)
V DS =15V,V GS =5V,
I D =3.5A
V DS =15V,V GS =10V,
I D =3.5A
SOURCE-DRAIN DIODE
0.95
V
T J =25°C, I S =6.6A,
V GS =0V
26.3
ns
T J =25°C, I F =3.5A,
di/dt= 100A/µs
26.6
nC
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE D - AUGUST 2001
4
ZXMN6A09DN8
TYPICAL CHARACTERISTICS
T = 150˚ C
5V
4V
3.5V
1
3V
VGS
0.1
2.5V
0.01
0.1
1
0.1
T = 25˚ C
VDS = 10V
3
4
5
ISD Reverse Drain Current (A)
RDS(on) Drain-Source On-Resistance
4V
VGS
0.1
5V
10V
T = 25˚ C
1
1
10
VGS = 10V
ID = 12A
1.6
RDS(on)
1.4
1.2
1.0
0.8
VGS(th)
VGS = V DS
ID = 250uA
0.6
0.4
-50
0
50
100
150
Tj Junction Temperature (˚ C)
1
3.5V
0.1
1.8
VGS Gate-Source Voltage (V)
3V
2V
VGS
Normalised RDS(on) and VGS(th)
ID Drain Current (A)
T = 150˚ C
2
2.5V
VDS Drain-Source Voltage (V)
10
0.1
3.5V
1
VDS Drain-Source Voltage (V)
1
4V
3V
0.01
10
5V
10
ID Drain Current (A)
ID Drain Current (A)
T = 25˚ C
10
10
ID Drain Current (A)
PROVISIONAL ISSUE D - AUGUST 2001
5
10
T = 150˚ C
1
T = 25˚ C
0.1
0.4
0.6
0.8
1.0
VSD Source-Drain Voltage (V)
1.2
ZXMN6A09DN8
VGS Gate-Source Voltage (V)
1800
C Capacitance (pF)
1600
1400
1200
1000
CISS
VGS = 0V
f = 1MHz
800
COSS
CRSS
600
400
200
0
1
10
VDS - Drain - Source Voltage (V)
ID = 3.5A
VDS = 15V
Q - Charge (nC)
Basic Gate Charge Waveform
Gate Charge Test Circuit
Switching Time Waveforms
Switching Time Test Circuit
PROVISIONAL ISSUE D - AUGUST 2001
6
ZXMN6A09DN8
PROVISIONAL ISSUE D - AUGUST 2001
7
ZXMN6A09DN8
PACKAGE DIMENSIONS
DIM
Millimetres
Inches
Min
Max
Min
Max
A
4.80
4.98
0.189
0.196
B
1.27 BSC
0.05 BSC
C
0.53 REF
0.02 REF
D
0.36
0.46
0.014
0.018
E
3.81
3.99
0.15
0.157
F
1.35
1.75
0.05
0.07
G
0.10
0.25
0.004
0.010
J
5.80
6.20
0.23
0.24
K
0°
8°
0°
8°
L
0.41
1.27
0.016
0.050
© Zetex plc 2001
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
Zetex Inc
Suite 315
700 Veterans Memorial Highway
Hauppauge NY11788
USA
Telephone: (631) 360 2222
Fax: (631) 360 8222
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Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
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3701-04 Metroplaza, Tower 1
Hing Fong Road
Kwai Fong, Hong Kong
China
Telephone: (852) 26100 611
Fax: (852) 24250 494
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services
concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or
service.
For the latest product information, log on to www.zetex.com
PROVISIONAL ISSUE D - AUGUST 2001
8