ZXMNS3BM832 MPPS™ Miniature Package Power Solutions 30V N Channel MOSFET & 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY N Channel MOSFET--- V(BR)DSS =30V; RSAT(on) =0.18 ; D = 2.7A Schottky Diode --- VR = 40V; VF = 500mV (@1A); IC=1A DESCRIPTION Packaged in the new innovation 3mm x 2mm MLP this combination dual product comprises a low gate drive, low on-resistance N-Channel MOSFET plus a fast-switching 1A Schottky barrier diode. This combination provides for highly efficient performance in a range of applications, including DC-DC conversion and low voltage power-management circuits. Users will also gain several other key benefits: 3mm x 2mm Dual Die MLP Performance capability equivalent to much larger packages Improved circuit efficiency & power levels Cathode PCB area and device placement savings Lower package height (0.9mm nom) Reduced component count FEATURES • Low on-resistance • Fast switching speed Anode • Low threshold • Low gate drive • Extremely Low VF, fast switching Schottky • 3mm x 2mm MLP PINOUT APPLICATIONS • DC - DC Converters • Low voltage power-management ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXMNS3BM832TA 7 ⴕⴕ 8mm 3000 ZXMNS3BM832TC 13ⴕ ⴕ 8mm 10000 3mm x 2mm Dual MLP underside view DEVICE MARKING MSA DRAFT ISSUE B - JUNE 2002 1 ZXMNS3BM832 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT MOSFET Drain-Source Voltage V DSS 30 V Gate-Charge Voltage V GS ⫾12 V ID 2.72 2.18 2.00 A A A I DM t.b.a A IS 2.7 A Continuous Drain Current@V GS =4.5V; T A =25⬚C (b)(d) @V GS =4.5V; T A =70⬚C (b)(d) @V GS =2.5V; T A =25⬚C (a)(d) Pulsed Drain Current (c) Source Current (Body Diode) @T A =25⬚C (b)(d) Pulsed Source Current (Body Diode)(c) I SM t.b.a A Storage Temperature Range T stg -55 to +150 °C Tj 150 °C Continuous Reverse Voltage VR 40 V Forward Current IF 1 A Junction Temperature Schottky Diode I FSM Non Repetitive Forward Current t≤ 100µs t≤ 10ms Forward Voltage @ 1A Storage Temperature Range Junction Temperature 12 A 5.2 A mV VF 500 T stg -55 to +150 °C Tj 125 °C Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW. DRAFT ISSUE B - JUNE 2002 2 ZXMNS3BM832 THERMAL PARAMETERS PARAMETER SYMBOL VALUE UNIT PD 1.2 12 W mW/°C Power Dissipation at TA=25°C (a)(f) Linear Derating Factor PD 1.5 12 W mW/°C Power Dissipation at TA=25°C (b)(f) Linear Derating Factor PD 2.9 23.2 W mW/°C Power Dissipation at TA=25°C (c)(f) Linear Derating Factor PD 1 8 W mW/°C Power Dissipation at TA=25°C (d)(f) Linear Derating Factor PD 1.13 8 W mW/°C Power Dissipation at TA=25°C (d)(g) Linear Derating Factor PD 1.7 13.6 W mW/°C Power Dissipation at TA=25°C (e)(g) Linear Derating Factor PD 3 24 W mW/°C VALUE UNIT 83.3 °C/W Schottky Power Dissipation at TA=25°C (a)(d) Linear Derating Factor Transistor THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a)(f) R θJA Junction to Ambient (b)(f) R θJA 43 °C/W Junction to Ambient (c)(f) R θJA 125 °C/W Junction to Ambient (d)(f) R θJA 111 °C/W Junction to Ambient (d)(g) R θJA 73.5 °C/W Junction to Ambient (e)(g) R θJA 41.7 °C/W Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW. DRAFT ISSUE B - JUNE 2002 3 ZXMNS3BM832 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS 30 Zero Gate Voltage Drain Current I DSS TYP. MAX. UNIT CONDITIONS. MOSFET STATIC V I D =250µA, V GS =0V 1 µA V DS =30V, V GS =0V 100 nA V GS =⫾20V, V DS =0V V Ω Ω I =250A, V DS = V GS D V GS =4.5V, I D =1.5A V GS =2.5V, I D =1.3A V DS =15V,I D =1.5A Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) 0.13 0.17 Forward Transconductance (1)(3) g fs t.b.a S Input Capacitance C iss 314 pF Output Capacitance C oss 40 pF Reverse Transfer Capacitance C rss 23 pF Turn-On Delay Time t d(on) 1.1 ns Rise Time tr 1.5 ns Turn-Off Delay Time t d(off) 5.1 ns Fall Time tf 2.1 ns Total Gate Charge Qg 2.9 nC Gate-Source Charge Q gs 0.6 nC Gate-Drain Charge Q gd 0.8 nC Diode Forward Voltage (1) V SD 0.85 Reverse Recovery Time (3) t rr Reverse Recovery Charge (3) Q rr 0.7 0.18 0.25 DYNAMIC (3) V DS =15 V, V GS =0V, f=1MHz SWITCHING(2) (3) V DD =15V, I D =1A R G =6.0Ω, V GS =4.5V V DS =15V,V GS =4.5V, I D =1.5A SOURCE-DRAIN DIODE 0.95 V T J =25°C, I S =1.7A, V GS =0V 17.7 ns 13.0 nC T J =25°C, I F =2.7A, di/dt= 100A/s SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS 40 60 V I R =300A Reverse Breakdown Voltage V (BR)R Forward Voltage VF 240 265 305 355 390 425 495 420 270 290 340 400 450 500 600 — mV mV mV mV mV mV mV mV Reverse Current IR 50 100 A V R =30V Diode Capacitance CD 25 pF f=1MHz,V R =25V Reverse Recovery Time t rr 12 ns switched from IF=500mA to IR=500mA Measured at IR=50mA NOTES: I F =50mA* I F =100mA* I F =250mA* I F =500mA* I F =750mA* I F =1000mA* I F =1500mA* I F=1000mA,Ta=100°C (1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. DRAFT ISSUE B - JUNE 2002 4 ZXMNS3BM832 MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES MLP832 PACKAGE DIMENSIONS MILLIMETRES DIM INCHES MILLIMETRES DIM MAX. MIN. MAX. A 0.80 1.00 0.031 0.039 A1 0.00 0.05 0.00 0.002 E A2 0.65 0.75 0.0255 0.0295 E2 0.43 0.63 A3 0.15 0.25 0.006 0.0098 E4 0.16 0.36 0.006 0.014 b 0.24 0.34 0.009 0.013 L 0.20 0.45 0.0078 0.0157 b1 0.17 0.30 0.0066 0.0118 L2 0.125 0.00 0.005 D 3.00 BSC e 0.118 BSC D2 0.82 1.02 0.032 0.040 D3 1.01 1.21 0.0397 0.0476 MIN. r ⍜ MAX. INCHES MIN. 0.65 REF 2.00 BSC 0.075 BSC 0⬚ 12⬚ MIN. MAX. 0.0256 BSC 0.0787 BSC 0.017 0.0249 0.0029 BSC 0⬚ 12⬚ © Zetex plc 2002 Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4422 Fax: (44) 161 622 4420 Zetex GmbH Streitfeldstraße 19 D-81673 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 USA Telephone: (631) 360 2222 Fax: (631) 360 8222 Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com DRAFT ISSUE B - JUNE 2002 5