ETC ZXMNS3BM832(2)

ZXMNS3BM832
MPPS™ Miniature Package Power Solutions
30V N Channel MOSFET & 40V, 1A SCHOTTKY DIODE COMBINATION
DUAL
SUMMARY
N Channel MOSFET--- V(BR)DSS =30V; RSAT(on) =0.18 ; D = 2.7A
Schottky Diode --- VR = 40V; VF = 500mV (@1A); IC=1A
DESCRIPTION
Packaged in the new innovation 3mm x 2mm MLP this combination dual
product comprises a low gate drive, low on-resistance N-Channel MOSFET
plus a fast-switching 1A Schottky barrier diode. This combination provides for
highly efficient performance in a range of applications, including DC-DC
conversion and low voltage power-management circuits.
Users will also gain several other key benefits:
3mm x 2mm Dual Die MLP
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
Cathode
PCB area and device placement savings
Lower package height (0.9mm nom)
Reduced component count
FEATURES
• Low on-resistance
• Fast switching speed
Anode
• Low threshold
• Low gate drive
• Extremely Low VF, fast switching Schottky
• 3mm x 2mm MLP
PINOUT
APPLICATIONS
• DC - DC Converters
• Low voltage power-management
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMNS3BM832TA
7 ⴕⴕ
8mm
3000
ZXMNS3BM832TC
13ⴕ ⴕ
8mm
10000
3mm x 2mm Dual MLP
underside view
DEVICE MARKING
MSA
DRAFT ISSUE B - JUNE 2002
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ZXMNS3BM832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
MOSFET
Drain-Source Voltage
V DSS
30
V
Gate-Charge Voltage
V GS
⫾12
V
ID
2.72
2.18
2.00
A
A
A
I DM
t.b.a
A
IS
2.7
A
Continuous Drain Current@V GS =4.5V; T A =25⬚C (b)(d)
@V GS =4.5V; T A =70⬚C (b)(d)
@V GS =2.5V; T A =25⬚C (a)(d)
Pulsed Drain Current (c)
Source Current (Body Diode) @T A =25⬚C (b)(d)
Pulsed Source Current (Body Diode)(c)
I SM
t.b.a
A
Storage Temperature Range
T stg
-55 to +150
°C
Tj
150
°C
Continuous Reverse Voltage
VR
40
V
Forward Current
IF
1
A
Junction Temperature
Schottky Diode
I FSM
Non Repetitive Forward Current t≤ 100µs
t≤ 10ms
Forward Voltage @ 1A
Storage Temperature Range
Junction Temperature
12
A
5.2
A
mV
VF
500
T stg
-55 to +150
°C
Tj
125
°C
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
DRAFT ISSUE B - JUNE 2002
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ZXMNS3BM832
THERMAL PARAMETERS
PARAMETER
SYMBOL
VALUE
UNIT
PD
1.2
12
W
mW/°C
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
PD
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
PD
2.9
23.2
W
mW/°C
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
PD
1
8
W
mW/°C
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
PD
1.13
8
W
mW/°C
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
PD
1.7
13.6
W
mW/°C
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
PD
3
24
W
mW/°C
VALUE
UNIT
83.3
°C/W
Schottky
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
Transistor
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)(f)
R θJA
Junction to Ambient (b)(f)
R θJA
43
°C/W
Junction to Ambient (c)(f)
R θJA
125
°C/W
Junction to Ambient (d)(f)
R θJA
111
°C/W
Junction to Ambient (d)(g)
R θJA
73.5
°C/W
Junction to Ambient (e)(g)
R θJA
41.7
°C/W
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The
copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed
pads attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached
attached. The copper are is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base if the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
DRAFT ISSUE B - JUNE 2002
3
ZXMNS3BM832
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
30
Zero Gate Voltage Drain Current
I DSS
TYP.
MAX.
UNIT CONDITIONS.
MOSFET
STATIC
V
I D =250µA, V GS =0V
1
µA
V DS =30V, V GS =0V
100
nA
V GS =⫾20V, V DS =0V
V
Ω
Ω
I =250␮A, V DS = V GS
D
V GS =4.5V, I D =1.5A
V GS =2.5V, I D =1.3A
V DS =15V,I D =1.5A
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State Resistance
(1)
R DS(on)
0.13
0.17
Forward Transconductance (1)(3)
g fs
t.b.a
S
Input Capacitance
C iss
314
pF
Output Capacitance
C oss
40
pF
Reverse Transfer Capacitance
C rss
23
pF
Turn-On Delay Time
t d(on)
1.1
ns
Rise Time
tr
1.5
ns
Turn-Off Delay Time
t d(off)
5.1
ns
Fall Time
tf
2.1
ns
Total Gate Charge
Qg
2.9
nC
Gate-Source Charge
Q gs
0.6
nC
Gate-Drain Charge
Q gd
0.8
nC
Diode Forward Voltage (1)
V SD
0.85
Reverse Recovery Time (3)
t rr
Reverse Recovery Charge (3)
Q rr
0.7
0.18
0.25
DYNAMIC (3)
V DS =15 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
V DD =15V, I D =1A
R G =6.0Ω, V GS =4.5V
V DS =15V,V GS =4.5V,
I D =1.5A
SOURCE-DRAIN DIODE
0.95
V
T J =25°C, I S =1.7A,
V GS =0V
17.7
ns
13.0
nC
T J =25°C, I F =2.7A,
di/dt= 100A/␮s
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS
40
60
V
I R =300␮A
Reverse Breakdown Voltage
V (BR)R
Forward Voltage
VF
240
265
305
355
390
425
495
420
270
290
340
400
450
500
600
—
mV
mV
mV
mV
mV
mV
mV
mV
Reverse Current
IR
50
100
␮A
V R =30V
Diode Capacitance
CD
25
pF
f=1MHz,V R =25V
Reverse Recovery Time
t rr
12
ns
switched from
IF=500mA to IR=500mA
Measured at IR=50mA
NOTES:
I F =50mA*
I F =100mA*
I F =250mA*
I F =500mA*
I F =750mA*
I F =1000mA*
I F =1500mA*
I F=1000mA,Ta=100°C
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
DRAFT ISSUE B - JUNE 2002
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ZXMNS3BM832
MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
MLP832 PACKAGE DIMENSIONS
MILLIMETRES
DIM
INCHES
MILLIMETRES
DIM
MAX.
MIN.
MAX.
A
0.80
1.00
0.031
0.039
A1
0.00
0.05
0.00
0.002
E
A2
0.65
0.75
0.0255
0.0295
E2
0.43
0.63
A3
0.15
0.25
0.006
0.0098
E4
0.16
0.36
0.006
0.014
b
0.24
0.34
0.009
0.013
L
0.20
0.45
0.0078
0.0157
b1
0.17
0.30
0.0066
0.0118
L2
0.125
0.00
0.005
D
3.00 BSC
e
0.118 BSC
D2
0.82
1.02
0.032
0.040
D3
1.01
1.21
0.0397
0.0476
MIN.
r
⍜
MAX.
INCHES
MIN.
0.65 REF
2.00 BSC
0.075 BSC
0⬚
12⬚
MIN.
MAX.
0.0256 BSC
0.0787 BSC
0.017
0.0249
0.0029 BSC
0⬚
12⬚
© Zetex plc 2002
Zetex plc
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
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DRAFT ISSUE B - JUNE 2002
5