ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. A 4 pin SOT223 version is also available (ZXMP2120G4). SOT23-5 FEATURES • High voltage • Low on-resistance • Fast switching speed • Low gate drive • Low threshold • SOT23-5 package variant engineered to increase spacing between high voltage pins. APPLICATIONS • Active clamping of primary side MOSFETs in 48 volt DC-DC converters ORDERING INFORMATION DEVICE ZXMP2120E5TA REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL N/C 7 8mm embossed 3,000 units D N/C DEVICE MARKING • P120 S G PINOUT - TOP VIEW ISSUE 2 - SEPTEMBER 2006 1 ZXMP2120E5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain-Source Voltage V DSS -200 V V GS ±20 V Continuous Drain Current (V GS =10V; T amb =25°C) (a) I D I DM Pulsed Drain Current (c) -122 mA -0.7 A Pulsed Source Current (Body Diode) (c) I SM -0.7 A PD 0.75 W 6 mW/°C -55 to +150 °C Gate Source Voltage Power Dissipation at T amb =25°C Linear Derating Factor (a) Operating and Storage Temperature Range T j : T stg LIMIT UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R θJA VALUE UNIT 167 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t⭐5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 2 - SEPTEMBER 2006 2 ZXMP2120E5 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage V (BR)DSS -200 Gate-Source Threshold Voltage V GS(th) -1.5 Gate-Body Leakage Zero Gate Voltage Drain Current TYP. MAX. UNIT CONDITIONS. STATIC On-State Drain Current (1) I D =-1mA, V GS =0V -3.5 V I =-1mA, V DS = V GS I GSS 20 nA V GS = ⫾20V, V DS =0V I DSS -10 -100 A µA V DS =-200 V, V GS =0 V DS =-160 V, V GS =0V, T=125°C (2) mA V DS =-25 V, V GS =-10V Ω VGS =-10V, I D =-150mA mS V DS =-25V,I D =-150mA I D(on) Static Drain-Source On-State Resistance Forward Transconductance V (1)(2) (1) -300 R DS(on) 28 g fs 50 D DYNAMIC Input Capacitance (2) C iss 100 pF Output Capacitance (2) C oss 25 pF Reverse Transfer Capacitance (2) C rss 7 pF Turn-On Delay Time (2) (3) t d(on) 7 ns Rise Time (2)(3) tr 15 ns Turn-Off Delay Time (2) (3) t d(off) 12 ns tf 15 ns V DS =-25 V, V GS =0V, f=1MHz SWITCHING Fall Time (2)(3) NOTES: (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%. (2) Sample test. (3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator. ISSUE 2 - SEPTEMBER 2006 3 V DD =-25V, I D =-150mA ZXMP2120E5 TYPICAL CHARACTERISTICS ISSUE 2 - SEPTEMBER 2006 4 ZXMP2120E5 CHARACTERISTICS ISSUE 2 - SEPTEMBER 2006 5 ZXMP2120E5 PACKAGE OUTLINE PAD LAYOUT DETAILS 0.95 0.375 1.06 0.042 2.2 0.087 mm inches 0.65 0.025 Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches Millimeters DIM MIN. MAX. MIN. MAX. 0.90 1.45 0.0354 0.0570 A1 - 0.15 - A2 0.90 1.30 b 0.20 C 0.09 A D Inches DIM 2.70 MIN. MAX. MIN. MAX. E 2.20 3.20 0.0866 0.1181 0.0059 E1 1.30 1.80 0.0511 0.0708 0.0354 0.0511 e 0.95 REF 0.0374 REF 0.50 0.0078 0.0196 e1 1.90 REF 0.0748 REF 0.26 0.0035 0.0102 L 0.10 0.60 0.0039 0.0236 a 0° 30° 0° 30° 3.10 0.1062 0.1220 © Zetex Semiconductors plc 2006 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Kustermann-park Balanstraße 59 D-81541 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 [email protected] Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - SEPTEMBER 2006 6