ZETEX ZXMP2120G4

ZXMP2120G4
200V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mA
DESCRIPTION
This 200V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
A SOT23-5 version is also available (ZXMP2120E5).
SOT223
FEATURES
• High voltage
• Low on-resistance
• Fast switching speed
• Low gate drive
• Low threshold
• SOT223 package variant engineered to increase spacing between
high voltage pins.
APPLICATIONS
• Active clamping of primary side MOSFETs in 48 volt DC-DC converters
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZXMP2120G4TA
7
12mm embossed
1,000 units
ZXMP2120G4TC
13
12mm embossed
4,000 units
N/C
PINOUT - TOP VIEW
DEVICE MARKING
ZXMP
2120
ISSUE 1 - DECEMBER 2005
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ZXMP2120G4
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (VGS =10V; Tamb =25°C)
Pulsed Drain Current
(a)
(c)
Pulsed Source Current (Body Diode)
Power Dissipation at T amb =25°C
Linear derating factor
(c)
(a)
Operating and Storage Temperature Range
VALUE
UNIT
V DS
-200
V
V GS
⫾20
V
ID
-200
mA
I DM
-1.2
A
I SM
-1.2
A
P tot
2.0
W
1.6
mW/°C
-55 to +150
°C
T j :T stg
THERMAL RESISTANCE
PARAMETER
SYMBOL
(a)
Junction to Ambient (b)
Junction to Ambient
VALUE
UNIT
R θJA
62.5
°C/W
R θJA
32
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
ISSUE 1 - DECEMBER 2005
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ZXMP2120G4
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source
Breakdown Voltage
BV DSS
-200
Gate-Source Threshold
Voltage
V GS(th)
-1.5
Gate-Body Leakage
MAX.
UNIT
CONDITIONS
V
I D =-1mA, V GS =0V
-3.5
V
I =-1mA, V DS = V GS
I GSS
20
nA
V GS = ⫾20V, V DS =0V
Zero Gate Voltage Drain
Current
I DSS
-10
-100
µA
µA
V DS =-200 V, V GS =0V
V DS =-160 V, V GS =0V,
T=125°C (2)
On-State Drain Current (1)
I D(on)
mA
V DS =-25 V, V GS =-10V
Static Drain-Source On-State
Resistance (1)
R DS(on)
Ω
V GS =-10V, I D =-150mA
mS
V DS =-25V, I D =-150mA
Forward Transconductance (1)(2) g fs
Input Capacitance
(2)
-300
25
50
C iss
100
pF
Common Source Output
Capacitance (2)
C oss
25
pF
Reverse Transfer Capacitance (2)
C rss
7
pF
t d(on)
7
ns
tr
15
ns
t d(off)
12
ns
tf
15
ns
Turn-On Delay Time
Rise Time
(2)(3)
Turn-Off Delay Time
Fall Time
(2)(3)
(2)(3)
(2)(3)
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ®2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ISSUE 1 - DECEMBER 2005
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D
V DS =-25V, V GS =0V, f=1MHz
V DD -25V, I D =-150mA
ZXMP2120G4
TYPICAL CHARACTERISTICS
ISSUE 1 - DECEMBER 2005
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ZXMP2120G4
CHARACTERISTICS
ISSUE 1 - DECEMBER 2005
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ZXMP2120G4
PACKAGE OUTLINE
PAD LAYOUT DETAILS
3.8
0.15
2.0
0.079
6.3
0.248
2.0
0.079
1.5
0.059
2.3
0.091
mm
inches
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
Min
Max
A
-
1.80
-
0.071
e
2.30 BSC
0.0905 BSC
A1
0.02
0.10
0.0008
0.004
e1
4.60 BSC
0.181 BSC
b
0.66
0.84
0.026
0.033
E
6.70
7.30
0.264
0.287
b2
2.90
3.10
0.114
0.122
E1
3.30
3.70
0.130
0.146
C
0.23
0.33
0.009
0.013
L
0.90
-
0.355
-
D
6.30
6.70
0.248
0.264
-
-
-
-
-
© Zetex Semiconductors plc 2005
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ISSUE 1 - DECEMBER 2005
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