ZXMS6001N3 60V N-channel self protected enhancement mode INTELLIFETTM MOSFET Summary Continuous drain source voltage VDS = 60V On-state resistance 675mΩ Max nominal load current (a) 1.1A (VIN = 5V) Min nominal load current (c) 0.7A (VIN = 5V) Clamping Energy 550mJ Description Low input current self protected low side MOSFET intended for Vin=5V applications. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level functionality. Intended as a general purpose switch. Note: S The tab is connected to the source pin and must be electrically isolated from the drain pin. Connection of significant copper to the drain pin is S recommended for best thermal performance. D Features IN • Short circuit protection with auto restart • Over voltage protection (active clamp) • Thermal shutdown with auto restart • Over-current protection • Input protection (ESD) • Load dump protection (actively protects load) • Low input current SOT223 Ordering information Device Package Part mark Reel size (inches) Tape width (mm) Quantity per reel ZXMS6001N3TA SOT223 ZXMS6001 7 12 embossed 1,000 Issue 1 - January 2008 © Zetex Semiconductors plc 2008 1 www.zetex.com ZXMS6001N3 Functional block diagram D Over Voltage Protection dV/dt limitation IN Human body ESD protection Over current protection Logic Over temperature protection S Applications and information • Especially suited for loads with a high in-rush current such as lamps and motors. • All types of resistive, inductive and capacitive loads in switching applications. • µC compatible power switch for 12V and 24V DC applications. • Automotive rated. • Replaces electromechanical relays and discrete circuits. Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low Vds, in order not to compromise the load current during normal operation. The design max DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the products ability to self protect itself at low VDS. Issue 1 - January 2008 © Zetex Semiconductors plc 2008 2 www.zetex.com ZXMS6001N3 Absolute maximum ratings Parameter Symbol Limit Unit VDS 60 V VDS(SC) 36 V Continuous Input Voltage VIN -0.2 ... +10 V Peak Input Voltage VIN -0.2 ... +20 V Continuous Input Current -0.2V=VIN=10V VIN<-0.2V or VIN>10V IIN Operating Temperature Range Tj, -40 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Power Dissipation at TA =25°C(a) PD 1.5 W Power Dissipation at TA =25°C(c) PD 0.6 W Continuous Drain Current @ VIN=5V; TA=25°C(a) ID 1.1 A Continuous Drain Current @ VIN=5V; TA=25°C(c) ID 0.7 A Continuous Source Current (Body Diode)(a) IS 2.0 A Pulsed Source Current (Body Diode)(b) IS 3.3 A EAS 550 mJ VLoadDump 80 V VESD 4000 V Continuous Drain-Source Voltage Drain-Source Voltage for short circuit protection VIN = 5V mA No limit | IIN | ≤2 Unclamped single pulse inductive energy Load dump protection Electrostatic Discharge (Human Body Model) DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 40/150/56 Thermal resistance Parameter Symbol Value Unit Junction to ambient(a) R⍜JA 83 °C/W Junction to ambient(b) R⍜JA 45 °C/W Junction to ambient(c) R⍜JA 208 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 board with a high coverage of single sided 2oz weight copper. Allocation of 6cm2 copper 33% to source tab and 66% to drain pin with source tab and drain pin electrically isolated. (b) For a device surface mounted on FR4 board as (a) and measured at t<=10s. (c) For a device surface mounted on FR4 board with the minimum copper required for electrical connections. Issue 1 - January 2008 © Zetex Semiconductors plc 2008 3 www.zetex.com ZXMS6001N3 Recommended operating conditions The ZXMS6001 is optimized for use with µC operating from 5V supplies. Symbol Description VIN Input voltage range TA Ambient temperature range VIH High level input voltage for MOSFET(d) VP Peripheral supply voltage (voltage to which load is referred) Min Max Units 0 6 V -40 125 °C 4 6 V 60 V Electrical characteristics (at Tamb = 25°C unless otherwise stated). Parameter Symbol Min Typ Max Unit Conditions Drain-Source Clamp Voltage VDS(AZ) 60 70 75 V Off state Drain Current IDSS 0.1 3 A VDS=12V, VIN=0V Off state Drain Current IDSS 3 15 A VDS=32V, VIN=0V 1.8 2.5 V Static Characteristics Input Threshold Voltage(d) VIN(th) 1 VDS=VGS, ID=10mA A VIN=+3V 500 A VIN=+5V, all circumstances 1 2 Ω VIN=3V, ID=0.1A 520 675 mΩ VIN=5V, ID=0.7A 1.8 3 A VIN=5V, VDS>5V Input Current IIN 150 Input Current IIN 335 Static Drain-Source On-State Resistance RDS(on) Static Drain-Source On-State Resistance RDS(on) Current Limit(e) ID(LIM) 1 ID=10mA Dynamic Characteristics Turn-On Time (VIN to 90% ID) ton 27 40 s RL=22Ω, VIN=0 to 5V, VDD=12V Turn-Off time (VIN to 90% ID) toff 26 40 s RL=22Ω, VIN=5V to 0V, VDD=12V Slew Rate On (70 to 50% VDD) -dVDS/dton 1.4 10 V/s RL=22Ω, VIN=0 to 5V, VDD=12V Slew Rate Off (50 to 70% VDD) DVDS/dton 1.2 10 V/s RL=22Ω, VIN=5V to 0V, VDD=12V NOTES: (d) Recommended input voltage range over which protection circuits function as specified. (e) The drain current is limited to a reduced value when Vds exceeds a safe level Issue 1 - January 2008 © Zetex Semiconductors plc 2008 4 www.zetex.com ZXMS6001N3 Parameter Symbol Min Typ 4 3.5 Max Unit Conditions V Ttrip>150°C V Ttrip>150°C Protection Functions (f) Minimum input voltage for over temperature protection VPROT Maximum input voltage for over temperature protection VPROT Thermal Overload Trip Temperature TJT 7 150 6 175 °C 8 °C Thermal hysteresis Unclamped single pulse inductive energy Tj=25°C EAS 550 mJ ID(ISO)=0.7A, VDD=32V Unclamped single pulse inductive energy Tj=150°C EAS 200 mJ ID(ISO)=0.7A, VDD=32V Inverse Diode Source drain voltage f 1 VSD V VIN=0V, -ID=1.4A Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. 3 300 Single Pulse = 300µs VDS = 13.5V IdLim Current Limit (A) IIN - Input Current (µA) 350 VIN = 5V 250 200 150 100 50 0 0 1 2 3 4 5 1 VDS = 12V 0 20 40 60 80 100 120 140 Temperature (°C) Current Limit v Temperature Input Current v Input Voltage © Zetex Semiconductors plc 2008 VIN = 5V 0 -40 -20 VIN - Input Voltage (V) Issue 1 - January 2008 2 5 www.zetex.com ZXMS6001N3 Application information The current-limit protection circuitry is designed to de-activate at low Vds to prevent the load current from being unnecessarily restricted during normal operation. The design max DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry (see graph page 8 'typical output characteristic'). This does not compromise the products ability to self protect at low VDS. The overtemperature protection circuit trips at a minimum of 150°C. So the available package dissipation reduces as the maximum required ambient temperature increases. This leads to the following maximum recommended continuous operating currents. Minimum copper area characteristics For minimum copper condition as described in note (c) Maximum continuous current VIN=5V Max Ambient Temperature TA 25°C at Vin=5V 720 70°C at Vin=5V 575 85°C at Vin=5V 520 125°C at Vin=5V 320 Max Power Dissipation (W) ID Drain Current (A) RDS(on) 0.6 Limited 1 0.4 DC 100m 1s 100ms 10m Single Pulse T amb=25°C 1m see note (c) - Minimum Copper 10ms 0.2 1ms 1 10 0.0 100 VDS Drain-Source Voltage (V) 0 20 Maximum Power (W) Thermal Resistance (°C/W) 150 D=0.5 100 50 Single Pulse D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Single Pulse Tamb=25°C 10 1 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance © Zetex Semiconductors plc 2008 100 120 140 160 100 100µ Pulse Width (s) Issue 1 - January 2008 80 Derating Curve Tamb=25°C D=0.2 60 Temperature (°C) Safe Operating Area 200 40 Pulse Power Dissipation 6 www.zetex.com ZXMS6001N3 Large copper area characteristics For large copper area as described in note (a) Max Ambient Temperature TA Maximum continuous current VIN=5V 25°C at Vin=5V 1140 70°C at Vin=5V 915 85°C at Vin=5V 825 125°C at Vin=5V 510 1.6 1 Max Power Dissipation (W) ID Drain Current (A) RDS(on) Limited 1.4 2 See Note (a) 6cm Copper 1.2 DC 1.0 1s 100m 0.8 100ms 10ms Single Pulse 1ms T amb=25°C 0.6 0.4 0.2 10m 1 10 0.0 100 VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160 Temperature (°C) Safe Operating Area Derating Curve 80 T amb=25°C Maximum Power (W) Thermal Resistance (°C/W) 90 70 60 50 D=0.5 40 30 20 Single Pulse D=0.2 D=0.05 10 0 100µ D=0.1 1m 10m 100m 1 10 100 10 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance © Zetex Semiconductors plc 2008 100 1 100µ 1k Pulse Width (s) Issue 1 - January 2008 Single Pulse T amb=25°C Pulse Power Dissipation 7 www.zetex.com ZXMS6001N3 3 ID Drain Current (A) Current limit active 6V 2 5V 4V 1 3V VIN 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 RDS(on) On-Resistance (mΩ) 1000 T = 25°C Current limit inactive VIN = 5V 800 ID = 0.7A 600 400 200 0 -50 VDS Drain-Source Voltage (V) -25 0 25 50 75 100 125 150 TJ Junction Temperature (°C) Typical Output Characteristic On-state Resistance vs Temperature RDS(on) On-Resistance (Ω) 1.4 1.4 VIN = VDS T J = 25°C 1.2 Normalised VIN(th) ID = 0.7A 1.0 0.8 0.6 0.4 0.2 0.0 3.0 3.5 4.0 4.5 5.0 5.5 1.0 0.8 0.6 0.4 -50 6.0 ID = 1mA 1.2 VIN Input Voltage (V) -25 0 25 50 75 100 125 150 TJ Junction Temperature (°C) On-Resistance vs Input Voltage Threshold Voltage vs Temperature 10 TJ = 25°C 0.1 0.01 RD = 22Ω VDS 10 1 Voltage (V) IS Source Current (A) 12 TJ = 150°C RIN = 25Ω 8 VIN 6 4 2 0 -20µ 0.4 0.6 0.8 1.0 1.2 VSD Diode Forward Voltage (V) © Zetex Semiconductors plc 2008 20µ 40µ 60µ 80µ 100µ120µ140µ160µ Time (s) Source-Drain Diode Forward Voltage Issue 1 - January 2008 0 Switching Speed 8 www.zetex.com ZXMS6001N3 Package outline - SOT223 Dim. Millimeters Inches Dim. Millimeters Inches Min. Max. Min. Max. Min. Max. Min. Max. A - 1.80 - 0.071 D 6.30 6.70 0.248 0.264 A1 0.02 0.10 0.0008 0.004 e 2.30 BSC 0.0905 BSC A2 1.55 1.65 0.0610 0.0649 e1 4.60 BSC 0.181 BSC b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146 C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 - Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 1 - January 2008 © Zetex Semiconductors plc 2008 9 www.zetex.com ZXMS6001N3 Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances. Life support Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Reproduction The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. Terms and Conditions All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement. For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office. Quality of product Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer. To ensure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our regionally authorized distributors. For a complete listing of authorized distributors please visit: www.zetex.com/salesnetwork Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels. ESD (Electrostatic discharge) Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices. The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time. Devices suspected of being affected should be replaced. Green compliance Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use of hazardous substances and/or emissions. All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with WEEE and ELV directives. Product status key: “Preview” Future device intended for production at some point. Samples may be available “Active” Product status recommended for new designs “Last time buy (LTB)” Device will be discontinued and last time buy period and delivery is in effect “Not recommended for new designs” Device is still in production to support existing designs and production “Obsolete” Production has been discontinued Datasheet status key: “Draft version” This term denotes a very early datasheet version and contains highly provisional information, which may change in any manner without notice. “Provisional version” This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance. However, changes to the test conditions and specifications may occur, at any time and without notice. “Issue” This term denotes an issued datasheet containing finalized specifications. However, changes to specifications may occur, at any time and without notice. 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