A Product Line of Diodes Incorporated ZXMS6005DG 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET™ MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 200 mΩ Nominal load current (VIN = 5V) 2A Clamping Energy 490 mJ SOT223 Package DESCRIPTION The ZXMS6005DG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-voltage (active clamp) and ESD protected logic level functionality. The ZXMS6005DG is ideal as a general purpose switch driven from 3.3V or 5V microcontrollers in harsh environments where standard MOSFETs are not rugged enough. S D D IN FEATURES • • • • • • • • • Compact high power dissipation package Low input current Logic Level Input (3.3V and 5V) Short circuit protection with auto restart Over voltage protection (active clamp) Thermal shutdown with auto restart Over-current protection Input Protection (ESD) High continuous current rating ORDERING INFORMATION DEVICE PART MARK REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXMS6005DGTA ZXMS 6005D 7 12 embossed 1,000 units ZXMS6005DG Document Number DS32247 Rev. 1 - 2 1 of 9 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated FUNCTIONAL BLOCK DIAGRAM D Over Voltage Protection dV/dt limitation IN Human body ESD protection Over temperature protection Logic Over current protection S APPLICATIONS AND INFORMATION • Especially suited for loads with a high in-rush current such as lamps and motors. • All types of resistive, inductive and capacitive loads in switching applications. • μC compatible power switch for 12V DC applications. • Automotive rated. • Replaces electromechanical relays and discrete circuits. • Linear Mode capability - the current-limiting protection circuitry is designed to de-activate at low VDS to minimise on state power dissipation. The maximum DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product’s ability to selfprotect at low VDS. ZXMS6005DG Document Number DS32247 Rev. 1 - 2 2 of 9 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Continuous Drain-Source Voltage VDS 60 V Drain-Source Voltage for short circuit protection VDS(SC) 24 V Continuous Input Voltage VIN -0.5 ... +6 V Continuous Input Current IIN mA -0.2V≤VIN≤6V No limit VIN<-0.2V or VIN>6V │IIN │≤2 Operating Temperature Range Tj, -40 to +150 °C Storage Temperature Range Tstg -55 to +150 °C Power Dissipation at TA =25°C (a) PD 1.3 W 10.4 mW/°C 3.0 W 24 mW/°C Linear Derating Factor PD Power Dissipation at TA =25°C (b) Linear Derating Factor Pulsed Drain Current @ VIN=3.3V IDM 5 A Pulsed Drain Current @ VIN=5V IDM 6 A Continuous Source Current (Body Diode) (a) IS 2.5 A Pulsed Source Current (Body Diode) ISM 10 A Unclamped single pulse inductive energy, Tj=25°C, ID=0.5A, VDD=24V EAS 490 mJ Electrostatic Discharge (Human Body Model) VESD 4000 V Charged Device Model VCDM 1000 V THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 96 °C/W Junction to Ambient (b) RθJA 42 °C/W Junction to Case (c) RθJC 12 °C/W NOTES (a) For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions. (b) For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions. (c) Thermal resistance from junction to the mounting surfaces of the drain pins. ZXMS6005DG Document Number DS32247 Rev. 1 - 2 3 of 9 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated RECOMMENDED OPERATING CONDITIONS The ZXMS6005DG is optimised for use with µC operating from 3.3V and 5V supplies. Symbol VIN TA VIH VIL VP Description Input voltage range Ambient temperature range High level input voltage for MOSFET to be on Low level input voltage for MOSFET to be off Peripheral supply voltage (voltage to which load is referred) Min 0 -40 3 0 0 Max 5.5 125 5.5 0.7 24 Units V °C V V V Limited by Over-Current Protection Limited by RDS(on) 1ms 1 DC 1s 100ms 100m 10m 10ms Single Pulse T amb=25°C Limit of s/c protection See Note (a) Thermal Resistance (°C/W) 1 10 3.0 2.5 See Note (b) 2.0 1.5 1.0 See Note (a) 0.5 0.0 0 25 50 75 100 VDS Drain-Source Voltage (V) Temperature (°C) Safe Operating Area Derating Curve 100 T amb=25°C 90 80 See Note (a) 70 60 D=0.5 50 40 30 D=0.2 Single Pulse 20 D=0.05 10 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k Maximum Power (W) ID Drain Current (A) 10 Max Power Dissipation (W) CHARACTERISTICS See Note (a) 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document Number DS32247 Rev. 1 - 2 150 Single Pulse T amb=25°C 100 Pulse Width (s) ZXMS6005DG 125 4 of 9 www.diodes.com Pulse Power Dissipation June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN TYP MAX UNIT CONDITIONS Drain-Source Clamp Voltage VDS(AZ) 60 65 70 V ID=10mA Off state Drain Current IDSS 1 µA VDS=12V, VIN=0V Off state Drain Current IDSS 2 uA VDS=36V, VIN=0V Input Threshold Voltage VIN(th) 1 1.5 V VDS=VGS, ID=1mA Input Current IIN 60 100 μA VIN=+3V Input Current IIN 120 200 μA VIN=+5V 300 μA VIN=+5V Static Characteristics 0.7 Input Current while over temperature active Static Drain-Source On-State Resistance RDS(on) 170 250 mΩ VIN=+3V, ID=1A Static Drain-Source On-State Resistance RDS(on) 150 200 mΩ VIN=+5V, ID=1A Continuous Drain Current (a) ID 1.4 A VIN=3V; TA=25°C Continuous Drain Current (a) ID 1.6 A VIN=5V; TA=25°C Continuous Drain Current (b) ID 1.9 A VIN=3V; TA=25°C Continuous Drain Current (b) ID 2.0 A VIN=5V; TA=25°C Current Limit (d) ID(LIM) 2.2 5 A VIN=+3V, Current Limit (d) ID(LIM) 3.3 7 A VIN=+5V VDD=12V, ID=1A, VGS=5V Dynamic Characteristics Turn On Delay Time td(on) 6 μs Rise time tr 14 μs Turn Off Delay Time td(off) 34 μs Fall Time ff 19 μs Notes: (d) The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside saturation makes current limit unnecessary. ZXMS6005DG Document Number DS32247 Rev. 1 - 2 5 of 9 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated PARAMETER SYMBOL MIN TYP MAX UNIT TJT 150 175 °C 10 °C CONDITIONS Over-temperature Protection Thermal Overload Trip Temperature (e) Thermal hysteresis (e) Note: (e) Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal operating range, so this part is not designed to withstand over-temperature for extended periods.. ZXMS6005DG Document Number DS32247 Rev. 1 - 2 6 of 9 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated TYPICAL CHARACTERISTICS 4.5V 5V 8 7 120 T A = 25°C IIN Input Current (μA) ID Drain Current (A) 9 4V 3.5V 6 3V 5 2.5V 4 3 2V 2 VIN 1 1.5V 0 100 80 60 40 20 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1 4 5 1.4 ID = 1A 0.4 T J = 150°C 0.2 T J = 25°C 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VTH Threshold Voltage (V) RDS(on) On-Resistance (Ω) 3 Input Current vs Input Voltage Typical Output Characteristic VIN = VDS 1.3 ID = 1mA 1.2 1.1 1.0 0.9 0.8 -75 -50 -25 0 25 50 75 100 125 150 TJ Junction Temperature (°C) VIN Input Voltage (V) On-Resistance vs Input Voltage Threshold Voltage vs Temperature 10 0.40 0.35 0.30 VIN = 3V 0.25 0.20 0.15 VIN = 5V 0.10 0.05 0.00 -75 -50 -25 0 25 50 75 100 125 150 IS Source Curent (A) RDS(on) On-Resistance (Ω) 2 VIN Input Voltage (V) VDS Drain-Source Voltage (V) TJ=150°C 1 T J=25°C 0.1 0.01 0.4 ZXMS6005DG Document Number DS32247 Rev. 1 - 2 0.8 1.0 1.2 VSD Source-Drain Voltage (V) TJ Junction Temperature (°C) On-Resistance vs Temperature 0.6 Reverse Diode Characteristic 7 of 9 www.diodes.com June 2010 © Diodes Incorporated Drain-Source Voltage (V) Drain-Source Voltage (V) A Product Line of Diodes Incorporated 12 ID=1A 10 VDS 8 6 VIN 4 2 0 -50 0 50 100 150 200 250 300 12 8 6 4 VIN 2 0 -50 0 50 100 150 200 250 300 Time (μs) Time (μs) Switching Speed Switching Speed ID Drain Current (A) ID=1A VDS 10 VIN = 5V 8 VDS = 15V RD = 0Ω 6 4 2 0 -2 0 2 4 6 8 10 12 Time (ms) Typical Short Circuit Protection ZXMS6005DG Document Number DS32247 Rev. 1 - 2 8 of 9 www.diodes.com June 2010 © Diodes Incorporated A Product Line of Diodes Incorporated IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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