DMP3105LVT 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Features and Benefits • • • • • • • ID RDS(on) max TA = 25°C 75mΩ @ VGS = -10V -3.9A 105mΩ @ VGS = -4.5V -3.3A NEW PRODUCT -30V Low Input Capacitance Low On-Resistance Fast Switching Speed Low Input/Output Leakage Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • • DC-DC Converters Power management functions Backlighting Motor Control • • • • Case: TSOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (approximate) Top View Ordering Information (Note 3) Part Number DMP3105LVT-7 Notes: Case TSOT26 Packaging 3,000/Tape & Reel 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information 31P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 DMP3105LVT Document number: DS35504 Rev. 2 - 2 Mar 3 2012 Z Apr 4 May 5 2013 A Jun 6 1 of 6 www.diodes.com 2014 B Jul 7 Aug 8 2015 C Sep 9 Oct O 2016 D Nov N Dec D November 2011 © Diodes Incorporated DMP3105LVT Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = -10V Steady State Continuous Drain Current (Note 4) VGS = -4.5V Steady State Continuous Drain Current (Note 5) VGS = -10V Steady State Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C ID Value -30 ±12 3.1 2.5 Units V V ID 2.7 2.2 A ID 3.9 3.1 A A IS IDM 3.3 2.7 2.2 20 Symbol PD RθJA PD RθJA RθJc TJ, TSTG Value 1.15 108 1.75 72 23.4 -55 to +150 ID Maximum Continuous Body Diode Forward Current Pulsed Drain Current (10us pulse, duty cycle=1%) A A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Units W °C/W W °C/W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -100 ±100 nA VGS(th) Static Drain-Source On-Resistance RDS (ON) |Yfs| VSD -0.5 ⎯ ⎯ ⎯ ⎯ ⎯ -0.9 65 75 98 5 -0.7 -1.5 75 98 150 ⎯ -1.0 Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 839 47 43 12.3 9.0 19.8 1.6 1.1 9.7 17.7 269 64 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10.0V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: V nA V mΩ S V Test Condition VGS = 0V, ID = -250μA VDS = -30V, VGS = 0V VGS = ±12V, VDS = 0V VDS = VGS, ID = -250μA VGS = -10V, ID = -4.2A VGS = -4.5V, ID = -4.0A VGS = -2.5V, ID = -3.0A VDS = -15V, ID = -4.0A VGS = 0V, IS = -1A pF VDS = -15V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -15V, ID = -4.0A ns VGS = -10V, VDD = -15V, RG = 6Ω, ID = -1A 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate 6 .Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. DMP3105LVT Document number: DS35504 Rev. 2 - 2 2 of 6 www.diodes.com November 2011 © Diodes Incorporated DMP3105LVT 12 12 VDS = -5.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 8 4 8 6 4 2 0 0 0.5 1 1.5 2 2.5 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) 0.12 VGS= -4.5V 0.08 VGS= -10V 0 0 3 6 9 12 ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.5 1 1.5 2 2.5 -VGS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics 3 0.2 VGS = 4.5V 0.16 TA=150°C TA=85°C T A=125°C 0.12 0.08 0.04 0 0 15 TA=25°C TA=-55°C 4 8 12 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 16 0.2 1.7 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE(Ω) VGS = -2.5V 0.16 0.04 0 0 3 0.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) NEW PRODUCT 10 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMP3105LVT Document number: DS35504 Rev. 2 - 2 3 of 6 www.diodes.com 0.16 0.12 0.08 0.04 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature November 2011 © Diodes Incorporated DMP3105LVT 16 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 20 1.2 1 0.8 ID= -1mA ID= -250µA 0.6 0.4 0.2 TA= 25°C 12 8 4 0 0.4 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10000 100000 CT, JUNCTION CAPACITANCE (pF) IDSS, LEAKAGE CURRENT (nA) f = 1MHz 10000 TA = 150 °C 1000 100 TA = 85°C 10 CISS 1000 100 COSS CRSS TA = 25°C 1 0 10 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Drain-Source Leakage Current vs. Voltage 100 10 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Junction Capacitance 30 ID(A) @ PW=10µs RDS(ON) Limited ID (A) @PW =1ms ID, DRAIN CURRENT (A) 8 VGS (V) NEW PRODUCT 1.4 6 4 2 10 ID (A ) @ P W= 10 0µ s 1 ID(A) @ DC ID(A) @PW=10s ID(A) @PW=1s ID(A) @PW=100ms 0.1 T J(MAX) = 150°C ID(A) @PW=10ms T A = 25°C Single Pulse 0 0 5 10 15 QG -(nC) Fig. 11 Gate Charge Characteristics DMP3105LVT Document number: DS35504 Rev. 2 - 2 20 4 of 6 www.diodes.com 0.01 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 November 2011 © Diodes Incorporated DMP3105LVT NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions D e1 E E1 L2 c 4x θ1 e L θ 6x b A A2 A1 TSOT26 Dim Min Max Typ A — 1.00 — A1 0.01 0.10 — A2 0.84 0.90 — D — — 2.90 E — — 2.80 E1 — — 1.60 b 0.30 0.45 c 0.12 0.20 e — — 0.95 e1 — — 1.90 L 0.30 0.50 L2 — — 0.25 θ 0° 8° 4° θ1 4° 12° — All Dimensions in mm Suggested Pad Layout C C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y (6x) X (6x) DMP3105LVT Document number: DS35504 Rev. 2 - 2 5 of 6 www.diodes.com November 2011 © Diodes Incorporated DMP3105LVT IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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