ZETEX ZXT2M322

ZXT2M322
MPPS™ Miniature Package Power Solutions
20V PNP LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
VCEO= 20V; RSAT = 64m ; IC= -3.5A
DESCRIPTION
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4th generation low saturation transistors offers extremely low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users will also gain several other key benefits:
Performance capability equivalent to much larger packages
2mm x 2mm MLP
(single die)
Improved circuit efficiency & power levels
Lower package height (nom 0.9mm)
PCB area and device placement savings
Reduced component count
FEATURES
• Low Equivalent On Resistance
• Extremely Low Saturation Voltage (-220mV @-1A)
• hFE characterised up to -6A
• IC= -3.5A Continuous Collector Current
• 2mm x 2mm MLP
APPLICATIONS
• DC - DC Converters (FET Drivers)
• Charging Circuits
• Power switches
PINOUT
• Motor control
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXT2M322TA
7 ⴕⴕ
8mm
3000
ZXT2M322TC
13ⴕ ⴕ
8mm
10000
DEVICE MARKING
2mm x 2mm Single MLP
underside view
S2
ISSUE 2 - JUNE 2002
1
ZXT2M322
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
V CBO
LIMIT
UNIT
-25
V
V
Collector-Emitter Voltage
V CEO
-20
Emitter-Base Voltage
V EBO
-7.5
V
Peak Pulse Current (c)
I CM
-6
A
Continuous Collector Current (a)
IC
-3.5
A
Base Current
IB
-1000
mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (d)
Linear Derating Factor
PD
1
8
W
mW/°C
Power Dissipation at TA=25°C (e)
Linear Derating Factor
PD
3
24
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
83
°C/W
Junction to Ambient (b)
R θJA
51
°C/W
Junction to Ambient (d)
R θJA
125
°C/W
Junction to Ambient (e)
R θJA
42
°C/W
NOTES
(a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at t⭐5 secs with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with minimal lead connections only.
(e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in
the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight is
Rth=300°C/W giving a power rating of Ptot=420mW.
ISSUE 2 - JUNE 2002
2
ZXT2M322
CHARACTERISTICS
CHARACTERISTICS
Max Power Dissipation (W)
IC Collector Current (A)
3.5
10
VCE(SAT)
Limited
1
DC
1s
100ms
10ms
0.1
1ms
100us
0.01
0.1
Single Pulse, Tamb=25°C
1
10
Tamb=25°C
3.0
2.5 2oz Cu
Note: e
2.0
1.5
1.0 1oz Cu
Note: a
0.5
0.0
0
VCE Collector-Emitter Voltage (V)
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
60
D=0.5
40
Single Pulse
D=0.05
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
PD Dissipation (W)
2.5
2oz copper
2.0
1.5
1oz copper
1.0
0.5
0.0
0.1
1
125
150
10
225
200
175
150
125
100
75
50
25
0
0.1
1oz copper
2oz copper
1
10
100
Thermal Resistance v Board Area
3.5
Tamb=25°C
Tj max=150°C
Continuous
100
Board Cu Area (sqcm)
Transient Thermal Impedance
3.0
75
Derating Curve
80
D=0.2
50
Temperature (°C)
Safe Operating Area
20
25
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ISSUE 2 - JUNE 2002
3
ZXT2M322
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown
Voltage
V (BR)CBO
-25
Collector-Emitter Breakdown
Voltage
V (BR)CEO
Emitter-Base Breakdown Voltage
V (BR)EBO
Collector Cut-Off Current
I CBO
Emitter Cut-Off Current
MAX.
UNIT
CONDITIONS.
-35
V
I C =-100␮A
-20
-25
V
I C =-10mA*
-7.5
-8.5
V
I E =-100␮A
-25
nA
V CB =-20V
I EBO
-25
nA
V EB =-6V
Collector Emitter Cut-Off Current
I CES
-25
nA
V CES =-16V
Collector-Emitter Saturation
Voltage
V CE(sat)
-19
-170
-190
-240
-225
-30
-220
-250
-350
-300
mV
mV
mV
mV
mV
I C =-0.1A, I B =-10mA*
I C =-1A, I B =-20mA*
I C =-1.5A, I B =-50mA*
I C =-2.5A, I B =-150mA*
I C =-3.5A, I B =-350mA*
Base-Emitter Saturation Voltage
V BE(sat)
-1.10
Base-Emitter Turn-On Voltage
V BE(on)
-0.87
Static Forward Current Transfer
Ratio
h FE
300
300
150
15
475
450
230
30
Transition Frequency
fT
150
180
Output Capacitance
C obo
21
Turn-On Time
t (on)
Turn-Off Time
t (off)
-1.075 V
-0.95
V
I C =-3.5A, I B =-350mA*
I C =-3.5A, V CE =-2V*
I C =-10mA, V CE =-2V*
I C =-0.1A, V CE =-2V*
I C =-2A, V CE =-2V*
I C =-6A, V CE =-2V*
MHz
I C =-50mA, V CE =-10V
f=100MHz
pF
V CB =-10V, f=1MHz
40
ns
670
ns
V CC =-10V, I C =-1A
I B1 =I B2 =10mA
30
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 2 - JUNE 2002
4
ZXT2M322
CHARACTERISTICS
1
0.25
IC/IB=50
Tamb=25°C
0.20
VCE(SAT) (V)
VCE(SAT) (V)
100°C
100m
IC/IB=100
IC/IB=50
10m
-55°C
10m
100m
1
0.00
1m
10
IC Collector Current (A)
VCE(SAT) v IC
VCE=2V
100°C
630
1.0
360
270
0.4
180
-55°C
0.2
90
10m
VBE(SAT) (V)
450
25°C
0.6
0.0
1m
100m
0
10
1
1
10
IC/IB=50
-55°C
0.6
25°C
100°C
10m
100m
1
IC Collector Current (A)
-55°C
0.6
25°C
10m
100m
IC Collector Current (A)
VBE(SAT) v IC
VCE=2V
0.4
0.8
1m
0.8
VBE(ON) (V)
10
100°C
hFE v IC
0.2
1m
1
0.4
IC Collector Current (A)
1.0
100m
540
1.0
0.8
10m
IC Collector Current (A)
VCE(SAT) v IC
Typical Gain (hFE)
Normalised Gain
1.4
1.2
25°C
0.10
0.05
IC/IB=10
1m
0.15
10
VBE(ON) v IC
ISSUE 2 - JUNE 2002
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ZXT2M322
MLP322 PACKAGE OUTLINE (2mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
PACKAGE DIMENSIONS
MILLIMETRES
DIM
INCHES
MILLIMETRES
DIM
MAX.
MIN.
MAX.
A
0.80
1.00
0.0315
0.0393
e
0.65 REF
0.0255 REF
A1
0.00
0.05
0.00
0.002
E
2.00 BSC
0.0787 BSC
A2
0.65
0.75
0.0255
0.0295
E2
0.79
0.99
0.031
0.039
A3
0.15
0.25
0.0059
0.0098
E4
0.48
0.68
0.0188
0.0267
b
0.18
0.28
0.0070
0.0110
L
0.20
0.45
0.0078
0.0177
b1
0.17
0.30
0.0066
0.0118
L2
0.125 MAX.
0.005 REF
r
0.075 BSC
0.0029 BSC
D
2.00 BSC
0.0787 BSC
D2
1.22
1.42
0.0480
0.0559
D4
0.56
0.76
0.0220
0.0299
⍜
MIN.
MAX.
INCHES
MIN.
0⬚
12⬚
MIN.
0⬚
MAX.
12⬚
© Zetex plc 2002
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ISSUE 2 - JUNE 2002
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