ZETEX ZXTBM322TC

ZXTBM322
MPPS™ Miniature Package Power Solutions
20V NPN LOW SATURATION TRANSISTOR
SUMMARY
VCEO= 20V; RSAT = 47m ; IC= 4.5A
DESCRIPTION
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4th generation low saturation transistor offers extremely low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users will also gain several other key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
2mm x 2mm MLP
(single die)
Lower package height (nom 0.9mm)
PCB area and device placement savings
Reduced component count
C
FEATURES
• Low Equivalent On Resistance
• Extremely Low Saturation Voltage (150mV @1A)
B
• hFE specified up to 6A
• IC= 4.5A Continuous Collector Current
• 2mm x 2mm MLP
E
APPLICATIONS
• DC - DC Converters (FET Drivers)
• Power switches
• Motor control
PINOUT
• LED backlighting
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXTBM322TA
7’‘
8mm
3000 units
ZXTBM322TC
13’‘
8mm
10000 units
2mm x 2mm Single MLP
underside view
DEVICE MARKING
SB
ISSUE 2 - JUNE 2002
1
ZXTBM322
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
V CBO
LIMIT
UNIT
40
V
V
Collector-Emitter Voltage
V CEO
20
Emitter-Base Voltage
V EBO
7.5
V
Peak Pulse Current (c)
I CM
12
A
Continuous Collector Current (a)
IC
4.5
A
Continuous Collector Current (b)
IC
5
A
Base Current
IB
1000
mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (d)
Linear Derating Factor
PD
1
8
W
mW/°C
Power Dissipation at TA=25°C (e)
Linear Derating Factor
PD
3
24
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
83
°C/W
Junction to Ambient (b)
R θJA
51
°C/W
Junction to Ambient (d)
R θJA
125
°C/W
Junction to Ambient (e)
R θJA
42
°C/W
NOTES
(a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at t⭐5 secs with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with minimal lead connections only.
(e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(f) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device, as shown in
the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight is
Rth=300°C/W giving a power rating of Ptot=420mW.
ISSUE 2 - JUNE 2002
2
ZXTBM322
TYPICAL CHARACTERISTICS
1
DC
1s
100ms
10ms
0.1
1ms
100us
0.01
0.1
Thermal Resistance (°C/W)
Max Power Dissipation (W)
VCE(SAT)
Limited
Single Pulse, Tamb=25°C
1
10
2.5 2oz Cu
2.0
Note: e
1.5
1.0 1oz Cu
Note: a
0.5
0.0
0
25
50
75
100
125
Temperature (°C)
Safe Operating Area
Derating Curve
80
60
D=0.5
40
Single Pulse
D=0.2
20
D=0.05
0
100µ 1m
D=0.1
10m 100m
1
10
100
1k
Pulse Width (s)
2.5
Tamb=25°C
Tj max=150°C
Continuous
2oz copper
2.0
1.5
1oz copper
1.0
0.5
0.0
0.1
1
10
1oz copper
2oz copper
1
10
Thermal Resistance v Board Area
3.5
3.0
225
200
175
150
125
100
75
50
25
0
0.1
150
Board Cu Area (sqcm)
Transient Thermal Impedance
PD Dissipation (W)
Tamb=25°C
3.0
VCE Collector-Emitter Voltage (V)
Thermal Resistance (°C/W)
IC Collector Current (A)
3.5
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ISSUE 2 - JUNE 2002
3
100
ZXTBM322
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown
Voltage
V (BR)CBO
40
Collector-Emitter Breakdown
Voltage
V (BR)CEO
Emitter-Base Breakdown Voltage
V (BR)EBO
Collector Cut-Off Current
I CBO
Emitter Cut-Off Current
MAX.
UNIT
CONDITIONS.
100
V
I C =100␮A
20
27
V
I C =10mA*
7.5
8.2
V
I E =100␮A
25
nA
V CB =32V
I EBO
25
nA
V EB =6V
Collector Emitter Cut-Off Current
I CES
25
nA
V CES =16V
Collector-Emitter Saturation
Voltage
V CE(sat)
8
15
mV
I C =0.1A, I B =10mA*
90
150
mV
I C =1A, I B =10mA*
115
135
mV
I C =2A, I B =50mA*
190
250
mV
I C =3A, I B =100mA*
210
270
mV
I C =4.5A, I B =125mA*
Base-Emitter Saturation Voltage
V BE(sat)
0.98
1.05
V
I C =4.5A, I B =125mA*
Base-Emitter Turn-On Voltage
V BE(on)
0.88
0.95
V
I C =4.5A, V CE =2V*
Static Forward Current Transfer
Ratio
h FE
200
300
200
100
400
450
360
180
Transition Frequency
fT
100
140
Output Capacitance
C obo
23
Turn-On Time
t (on)
Turn-Off Time
t (off)
I C =10mA, V CE =2V*
I C =0.2A, V CE =2V*
I C =2A, V CE =2V*
I C =6A, V CE =2V*
MHz
I C =50mA, V CE =10V
f=100MHz
pF
V CB =10V, f=1MHz
170
ns
400
ns
V CC =10V, I C =3A
I B1 =I B2 =10mA
30
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 2 - JUNE 2002
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ZXTBM322
TYPICAL CHARACTERISTICS
0.25
IC/IB=50
Tamb=25°C
0.20
100°C
VCE(SAT) (V)
VCE(SAT) (V)
100m
IC/IB=100
10m
IC/IB=50
10m
100m
25°C
0.10
-55°C
0.05
IC/IB=10
1m
1m
0.15
1
0.00
1m
10
IC Collector Current (A)
VCE(SAT) v IC
10m
100m
1
10
1
10
IC Collector Current (A)
VCE(SAT) v IC
630
1.0
100°C
0.8
360
25°C
270
-55°C
0.4
180
0.2
90
10m
100m
1
10
0
hFE v IC
VBE(ON) (V)
0.8
-55°C
0.6
25°C
1m
100°C
10m
100m
1
IC Collector Current (A)
-55°C
0.6
25°C
100°C
0.4
10m
100m
IC Collector Current (A)
VBE(SAT) v IC
VCE=2V
0.4
0.8
1m
IC Collector Current (A)
1.0
IC/IB=50
450
0.6
0.0
1m
1.0
540
VBE(SAT) (V)
Normalised Gain
1.2
Typical Gain (hFE)
VCE=2V
10
VBE(ON) v IC
ISSUE 2 - JUNE 2002
5
ZXTBM322
MLP322 PACKAGE OUTLINE (2mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
PACKAGE DIMENSIONS
MILLIMETRES
DIM
INCHES
MILLIMETRES
DIM
MIN.
MAX.
MIN.
MAX.
A
0.80
1.00
0.0315
0.0393
A1
0.00
0.05
0.00
0.002
E
A2
0.65
0.75
0.0255
0.0295
E2
0.79
0.99
0.031
0.039
A3
0.15
0.25
0.0059
0.0098
E4
0.48
0.68
0.0188
0.0267
b
0.18
0.28
0.0070
0.0110
L
0.20
0.45
0.0078
0.0177
b1
0.17
0.30
0.0066
0.0118
L2
0.125 MAX.
0.005 REF
r
0.075 BSC
0.0029 BSC
D
2.00 BSC
e
0.0787 BSC
D2
1.22
1.42
0.0480
0.0559
D4
0.56
0.76
0.0220
0.0299
MIN.
⍜
MAX.
INCHES
0.65 REF
MAX.
0.0255 REF
2.00 BSC
0⬚
MIN.
0.0787 BSC
12⬚
0⬚
12⬚
© Zetex plc 2002
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ISSUE 2 - JUNE 2002
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