ZETEX ZXTCM322TC

ZXTCM322
MPPS™ Miniature Package Power Solutions
50V NPN LOW SATURATION TRANSISTOR
SUMMARY
VCEO= 50V; RSAT = 68m ; IC= 4A
DESCRIPTION
Packaged in the innovative 2mm x 2mm MLP (Micro Leaded Package) outline,
this new 4th generation low saturation transistor offers extremely low on state
losses making it ideal for use in DC-DC circuits and various driving and power
management functions.
Additionally users will also gain several other key benefits:
Performance capability equivalent to much larger packages
2mm x 2mm MLP
(single die)
Improved circuit efficiency & power levels
Lower package height (nom 0.9mm)
PCB area and device placement savings
Reduced component count
FEATURES
• Low Equivalent On Resistance
• Extremely Low Saturation Voltage (100mV max @1A)
• hFE specified up to 6A
• IC= 4A Continuous Collector Current
• 2mm x 2mm MLP
APPLICATIONS
• DC - DC Converters
• Charging Circuits
• Power switches
PINOUT
• Motor control
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXTCM322TA
7 ⴕⴕ
8mm
3000
ZXTCM322TC
13ⴕ ⴕ
8mm
10000
DEVICE MARKING
2mm x 2mm Single MLP
underside view
SC
ISSUE 2 - JUNE 2002
1
ZXTCM322
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
V CBO
LIMIT
UNIT
100
V
V
Collector-Emitter Voltage
V CEO
50
Emitter-Base Voltage
V EBO
7.5
V
Peak Pulse Current (c)
I CM
6
A
Continuous Collector Current (a)
IC
4
A
Base Current
IB
1000
mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD
1.5
12
W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
2.45
19.6
W
mW/°C
Power Dissipation at TA=25°C (d)
Linear Derating Factor
PD
1
8
W
mW/°C
Power Dissipation at TA=25°C (e)
Linear Derating Factor
PD
3
24
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient (a)
R θJA
83
°C/W
Junction to Ambient (b)
R θJA
51
°C/W
Junction to Ambient (d)
R θJA
125
°C/W
Junction to Ambient (e)
R θJA
42
°C/W
NOTES
(a) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(b) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions measured at t⭐5 secs with all exposed pads
attached.
(c) Repetitive rating - pulse width limited by max junction temperature. refer to Transient Thermal Impedance graph.
(d) For a single device surface mounted on 10sq cm1oz copper on FR4 PCB in still air conditions with minimal lead connections only.
(e) For a single device surface mounted on 65sq cm2oz copper on FR4 PCB in still air conditions with all exposed pads attached.
(f) The minimum copper dimensions requires for mounting are no smaller than the exposed metal pads on the base of the device, as shown in
the package dimensions data. The thermal resistance for a device mounted on 1.5mm thick FR4 board using minimum copper of 1oz weight and
1mm wide wide tracks is Rth=300⬚C giving a power rating of Ptot=420mW.
ISSUE 2 - JUNE 2002
2
ZXTCM322
TYPICAL CHARACTERISTICS
VCE(SAT)
Limited
1
DC
1s
100ms
10ms
0.1
1ms
100us
0.01
0.1
Single Pulse, Tamb=25°C
1
10
100
Max Power Dissipation (W)
IC Collector Current (A)
3.5
10
Tamb=25°C
3.0
2.5 2oz Cu
2.0 Note: e
1.5
1.0 1oz Cu
Note: a
0.5
0.0
0
VCE Collector-Emitter Voltage (V)
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
60
D=0.5
40
Single Pulse
D=0.05
0
100µ 1m
D=0.1
10m 100m
1
10
100
1k
Pulse Width (s)
PD Dissipation (W)
2.5
2oz copper
2.0
1.5
1oz copper
1.0
0.5
0.0
0.1
1
125
150
10
225
200
175
150
125
100
75
50
25
0
0.1
1oz copper
2oz copper
1
10
100
Thermal Resistance v Board Area
3.5
Tamb=25°C
Tj max=150°C
Continuous
100
Board Cu Area (sqcm)
Transient Thermal Impedance
3.0
75
Derating Curve
80
D=0.2
50
Temperature (°C)
Safe Operating Area
20
25
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ISSUE 2 - JUNE 2002
3
ZXTCM322
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
Collector-Base Breakdown
Voltage
V (BR)CBO
100
Collector-Emitter Breakdown
Voltage
V (BR)CEO
Emitter-Base Breakdown Voltage
V (BR)EBO
Collector Cut-Off Current
I CBO
Emitter Cut-Off Current
MAX.
UNIT
CONDITIONS.
190
V
I C =100␮A
50
65
V
I C =10mA*
7.5
8.2
V
I E =100␮A
25
nA
V CB =80V
I EBO
25
nA
V EB =6V
Collector Emitter Cut-Off Current
I CES
25
nA
V CES =40V
Collector-Emitter Saturation
Voltage
V CE(sat)
10
70
145
115
225
270
20
100
200
220
300
320
mV
mV
mV
mV
mV
mV
I C =0.1A, I B =10mA*
I C =1A, I B =50mA*
I C =1A, I B =10mA*
I C =2A, I B =50mA*
I C =3A, I B =100mA*
I C =4A, I B =200mA*
Base-Emitter Saturation Voltage
V BE(sat)
1.00
1.05
V
I C =4A, I B =200mA*
Base-Emitter Turn-On Voltage
V BE(on)
0.94
1.00
V
I C =4A, V CE =2V*
Static Forward Current Transfer
Ratio
h FE
200
300
200
100
400
450
400
225
40
Transition Frequency
fT
100
165
Output Capacitance
C obo
12
Turn-On Time
t (on)
Turn-Off Time
t (off)
I C =10mA, V CE =2V*
I C =0.2A, V CE =2V*
I C =1A, V CE =2V*
I C =2A, V CE =2V*
I C =6A, V CE =2V*
MHz
I C =50mA, V CE =10V
f=100MHz
pF
V CB =10V, f=1MHz
170
ns
750
ns
V CC =10V, I C =1A
I B1 =I B2 =10mA
20
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ISSUE 2 - JUNE 2002
4
ZXTCM322
TYPICAL CHARACTERISTICS
0.25
IC/IB=50
Tamb=25°C
0.20
10m
IC/IB=100
VCE(SAT) (V)
VCE(SAT) (V)
100m
IC/IB=50
10m
100m
1
0.00
1m
10
IC Collector Current (A)
VCE(SAT) v IC
100°C
1.0
270
-55°C
0.4
180
0.2
0.0
1m
90
10m
100m
0
10
1
hFE v IC
VCE=2V
VBE(ON) (V)
0.8
-55°C
0.6
25°C
100°C
10m
100m
1
IC Collector Current (A)
0.6
1
10
25°C
100°C
0.4
10m
100m
IC Collector Current (A)
VBE(SAT) v IC
1.0
1m
10
-55°C
1m
IC Collector Current (A)
0.4
1
0.8
VBE(SAT) (V)
360
0.6
100m
IC/IB=50
540
450
25°C
10m
IC Collector Current (A)
1.0
Typical Gain (hFE)
Normalised Gain
VCE=2V
0.8
-55°C
VCE(SAT) v IC
630
1.2
25°C
0.10
0.05
IC/IB=10
1m
1m
100°C
0.15
10
VBE(ON) v IC
ISSUE 2 - JUNE 2002
5
ZXTCM322
MLP322 PACKAGE OUTLINE (2mm x 2mm Micro Leaded Package)
CONTROLLING DIMENSIONS IN MILLIMETRES
APPROX. CONVERTED DIMENSIONS IN INCHES
PACKAGE DIMENSIONS
MILLIMETRES
DIM
INCHES
MILLIMETRES
DIM
MAX.
MIN.
MAX.
A
0.80
1.00
0.0315
0.0393
e
0.65 REF
0.0255 REF
A1
0.00
0.05
0.00
0.002
E
2.00 BSC
0.0787 BSC
A2
0.65
0.75
0.0255
0.0295
E2
0.79
0.99
0.031
0.039
A3
0.15
0.25
0.0059
0.0098
E4
0.48
0.68
0.0188
0.0267
b
0.18
0.28
0.0070
0.0110
L
0.20
0.45
0.0078
0.0177
b1
0.17
0.30
0.0066
0.0118
L2
0.125 MAX.
0.005 REF
r
0.075 BSC
0.0029 BSC
D
2.00 BSC
0.0787 BSC
D2
1.22
1.42
0.0480
0.0559
D4
0.56
0.76
0.0220
0.0299
⍜
MIN.
MAX.
INCHES
MIN.
0⬚
12⬚
MIN.
0⬚
MAX.
12⬚
© Zetex plc 2002
Americas
Asia Pacific
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY11788
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
[email protected]
USA
Telephone: (631) 360 2222
Fax: (631) 360 8222
[email protected]
Zetex (Asia) Ltd
3701-04 Metroplaza, Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
[email protected]
Europe
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
[email protected]
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
www.zetex.com
ISSUE 2 - JUNE 2002
6