NELLSEMI 4PT06A-06

4PT Series
SEMICONDUCTOR
RoHS
RoHS
Sensitive gate SCRs, 4A
Main Features
2
Symbol
Value
Unit
I T(RMS)
4
A
2
1
V DRM /V RRM
I GT
1
V
600 to 800
10 to 2 00
2
3
3
TO-251 (I-PAK)
(4PTxxF)
µA
2
TO-252 (D-PAK)
(4PTxxG)
2
DESCRIPTION
Thanks to highly sensitive triggering levels, the 4PT
series is suitable for all applications where the available
gate current is limited, such as motor control for hand
tools, kitchen aids, capacitive discharge ignitions,
overvoltage crowbar protection for low power supplies
among others.
Available in through-hole or surface-mount packages,
they provide an optimized performance in a limited
space area.
1
2
1
3
TO-220AB (Non-lnsulated)
2
3
TO-220AB (lnsulated)
(4PTxxAI)
(4PTxxA)
2
(A2)
(G)3
1(A1)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
IT(RMS)
Average on-state current
(180° conduction angle)
IT(AV)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
ITSM
I2t Value for fusing
TEST CONDITIONS
SYMBOL
TO-251/TO-252/TO-220AB
Tc=115°C
TO-220AB insulated
Tc=110°C
TO-251/TO-252/TO-220AB
Tc=115°C
TO-220AB insulated
Tc=110°C
VALUE
UNIT
4
A
2.5
A
F =50 Hz
t = 20 ms
30
F =60 Hz
t = 16.7 ms
33
t p = 10 ms
I2t
A
4.5
A2s
Critical rate of rise of on-state current
IG = 2xlGT, tr≤100ns
dI/dt
F = 60 Hz
T j = 125ºC
50
A/µs
Peak gate current
IGM
T p = 20 µs
T j = 125ºC
1.2
A
Average gate power dissipation
PG(AV)
T j =125ºC
0.2
W
Repetitive peak off-state voltage
VDRM
V
VRRM
T j =125ºC
600 and 800
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
Tstg
- 40 to + 150
Tj
- 40 to + 125
ºC
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Page 1 of 6
4PT Series
SEMICONDUCTOR
ELECTRICAL SPECIFICATIONS
SYMBOL
(TJ = 25 ºC unless otherwise specified)
4PTxxxx
TEST CONDITIONS
IGT
V D = 12V, R L = 30Ω
VGT
V D = V DRM , R L = 3.3KΩ
VGD
RoHS
RoHS
R GK = 220Ω, T j = 125°C
Unit
10
Min.
Max.
Max.
200
0.8
V
Min.
0.1
V
µA
IH
I T = 50mA, R GK = 1KΩ
Max.
5
mA
IL
I G = 1mA, R GK = 1KΩ
Min.
6
mA
V D = 67% V DRM , R GK = 1KΩ , T j = 125°C
Min.
10
V/µs
dV/dt
VTM
I T = 8A, t P = 380 µs
T j = 25°C
Max.
1.6
V
IDRM
V D =V DRM , V R =V RRM
T j = 25°C
Max.
5
µA
IRRM
R GK = 220Ω
T j = 125°C
Max.
0.5
mA
THERMAL RESISTANCE
Rth(j-c)
Junction to case (DC)
S = 0.5 cm 2
Rth(j-a)
VALUE
UNIT
IPAK/DPAK/TO-220AB
2.8
°C/W
TO-252(D-PAK)
70
TO-220AB
60
Parameter
SYMBOL
Junction to ambient
TO-251(I-PAK)
°C/W
100
PRODUCT SELECTOR
VOLTAGE (x x)
PART NUMBER
SENSITIVITY
PACKAGE
1000 V
600 V
800 V
4PTxxA-S/4PTxxAl-S
V
V
V
70~200 µA
TO-220AB
4PTxxA-03/4PTxxAl-03
V
V
V
10~30 µA
TO-220AB
4PTxxA-05/4PTxxAl-05
V
V
V
20~30 µA
TO-220AB
4PTxxA-06/4PTxxAl-06
V
V
V
30~60 µA
TO-220AB
4PTxxA-08/4PTxxAl-08
V
V
V
50~80 µA
TO-220AB
4PTxxF-S
V
V
V
70~200 µA
I-PAK
4PTxxF-03
V
V
V
10~30 µA
I-PAK
4PTxxF-05
V
V
V
20~30 µA
I-PAK
4PTxxF-06
V
V
V
30~60 µA
I-PAK
4PTxxF-08
V
V
V
50~80 µA
I-PAK
4PTxxG-S
V
V
V
70~200 µA
D-PAK
4PTxxG-03
V
V
V
10~30 µA
D-PAK
4PTxxG-05
V
V
20~30 µA
D-PAK
4PTxxG-06
V
V
V
30~60 µA
D-PAK
4PTxxG-08
V
V
V
50~80 µA
D-PAK
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Page 2 of 6
V
4PT Series
SEMICONDUCTOR
RoHS
RoHS
ORDERING INFORMATION
ORDERING TYPE
MARKING
PACKAGE
WEIGHT
,
BASE Q TY
DELIVERY MODE
4PTxxA-yy
4PTxxA-yy
TO-220AB
2.0g
50
Tube
4PTxxAI-yy
4PTxxAI-yy
TO-220AB (insulated)
2.3g
50
Tube
4PTxxF-yy
4PTxxF-yy
TO-251(I-PAK)
0.40g
80
Tube
4PTxxG-yy
4PTxxG-yy
TO-252(D-PAK)
0.38g
80
Tube
Note: xx = voltage, yy = sensitivity
ORDERING INFORMATION SCHEME
- S
4 PT 06
Current
4 = 4A, IT(RMS)
SCR series
Voltage Code
06 = 600V
08 = 800V
Package type
A = TO-220AB (non-insulated)
AI = TO-220AB ( insulated)
F = TO-251 (I-PAK)
G = TO-252 (D-PAK)
IGT Sensitivity
03 = 10~30 µA
05 = 20~50 µA
06 = 30~60 µA
08 = 50~80 µA
S = 70~200 µA
Fig.1 Maximum average power dissipation versus
on-state current
P(W)
5.0
4.0
3.5
Fig.2 Average and DC on-state current versus
case temperature
I T(AV) (A)
4.5
4.0
α=180°
3.0
DC
3.5
2.5
TO-220AB
Insulated
3.0
α=180°
2.5
2.0
2.0
1.5
1.0
0.5
0.0
0.5
1.0
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1.5
1.0
0.5
0.0
α
I T(AV) (A)
0.0
2.0
2.5
TO-251/TO-252
TO-220AB
1.5
360°
3.0
T case (°C)
0
Page 3 of 6
25
50
75
100
125
Fig.4 Relative variation of thermal impedance
junction to ambient versus pulse duration
(DPAK)
K=[Zth(j-c)/Rth(j-c)]
Fig.3 Average and DC on-state current versus
ambient temperature (DPAK)
I T (AV)(A)
2.0
1E+0
Device mounted on FR4 with
recommended pad layout
1.8
1.6
1.4
1.2
RoHS
RoHS
4PT Series
SEMICONDUCTOR
DC
Z th(j-c)
DPAK (S = 0.5 cm ²)
α=180°
1E-1
Z th(j-a)
1.0
0.8
IPAK
0.6
0.4
1E-2
DC
α=180°
0.2
0.0
T amb (°C)
0
50
25
75
100
125
Fig.5 Relative variation of gate trigger current
and holding current versus junction
temperature
2.0
1.8
1.6
1.4
t p (s)
1E-3
1E-3
1E+0
1E-1
1E-2
Device mounted on FR4 with
recommended pad layout
1E+1
1E+2 5E+2
Fig.6 Relative variation of holding current
versus gate-cathode resistance
(typical values)
I H [R GK ] / I H [R GK =1KΩ
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25 C]
5
Tj=25 ° C
4
I GT
1.2
1.0
3
l hand IL
R GK =1K Ω
0.8
0.6
2
0.4
0.2
0.0
-40
T j (°C)
1
R GK (KΩ)
-20
0
20
40
60
80
100
120
0
1E-2
140
1E+1
Fig.8 Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values)
Fig.7 Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values)
10.00
1E+0
1E-1
dV/dt[R GK ] / dV/dt[R GK =220Ω]
10
Tj=125 C
V D =0.67 X V DRM
dV/dt[C GK ] / dV/dt[R GK =220Ω]
V D =0.67 X V DRM
T j =125 ° C
R GK =220Ω
8
1.00
6
4
0.10
2
R GK (KΩ)
0.01
0
200 400 600 800 1000 1200 1400 1600 1800 2000
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C GK (nF)
0
0
Page 4 of 6
2
4
6
8
10
12
14
16
18
20
22
Fig.10 Non-repetitive surge peak on-state
current, and corresponding values
of l²t
Fig.9 Surge peak on-state current versus
number of ctcles
I TSM (A),I²t(A²s)
I TSM (A)
35
RoHS
RoHS
4PT Series
SEMICONDUCTOR
300
Tj inital=25 ° C
dI/dt Iimitation
30
100
tp=10ms
25
I TSM
One cycle
20
Non repetitive
Tj inital=25°C
15
10
I²t
Repetitive
Tc=115°C
10
Sinusoidal pulse with
width < 10ms
5
Number of cycles
0
10
1
0.01
Fig.11 On-state characteristics (maximum
values)
50.0
t p (ms)
1
1000
100
0.10
1.00
10.00
Fig.12 Thermal resistance junction to ambient
versus copper surface under tab (DPAK)
R th (j-a)( ° C/W)
I TM (A)
100
Tjmax
V t0 =0.85V
Rd=90mΩ
Epoxy printed circuit board FR4
copper thickness = 35µm
80
10.0
60
Tj=max
1.0
RoHS
40
Tj=25 ° C
20
S(cm²)
V TM (V)
0
0.1
0
0.0
0.5
1.0
1.5
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2.0
2.5
3.0
3.5
0
4.0
Page 5 of 6
2
4
6
8
10
12
14
16
18
20
4PT Series
SEMICONDUCTOR
RoHS
RoHS
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
PIN
2
1
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
3
4.06 (0.160)
3.56 (0.140)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
2.65 (0.104)
2.45 (0.096)
0.56 (0.022)
0.36 (0.014)
5.20 (0.205)
4.95 (0.195)
TO-251
(I-PAK)
6.6(0.26)
2.4(0.095)
2.2(0.086)
6.4(0.52)
1.5(0.059)
5.4(0.212)
1.37(0.054)
5.2(0.204)
0.62(0.024)
0.48(0.019)
6.2(0.244)
4T
6(0.236)
16.3(0.641)
15.9(0.626)
1.9(0.075)
1.8(0.071)
RoHS
9.4(0.37)
9(0.354)
0.85(0.033)
0.76(0.03)
0.65(0.026)
0.55(0.021)
4.6(0.181)
4.4(0.173)
0.62(0.024)
0.45(0.017)
TO-252
(D-PAK)
2.4(0.095)
2.2(0.086)
6.6(0.259)
6.4(0.251)
1.5(0.059)
5.4(0.212)
5.2(0.204)
1.37(0.054)
0.62(0.024)
0.48(0.019)
2
1
1.14(0.045)
0.76(0.030)
2.28(0.090)
2
3
9.35(0.368)
10.1(0.397)
0.89(0.035)
0.64(0.025)
6.2(0.244)
6(0.236)
0.62(0.024)
0.45(0.017)
2
(A2)
4.57(0.180)
(G)3
1(A1)
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Page 6 of 6