RoHS 12PT Series RoHS SEMICONDUCTOR Sensitive and Standard SCRs, 12A Main Features 2 Symbol Value Unit I T(RMS) 12 A V DRM /V RRM I GT 2 1 V 600 to 1000 0.2 to 15 1 mA 2 3 2 3 TO-251 (I-PAK) (12PTxxF) TO-252 (D-PAK) (12PTxxG) 2 DESCRIPTION Available either in sensitive or standard gate triggering levels, the 12A SCR series is suitable to fit all modes of control found in applications such as overvoltage crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits. 1 1 2 3 TO-220AB (Non-lnsulated) (12PTxxA) Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space. 2 3 TO-220AB (lnsulated) (12PTxxAI) A2 2 (A2) A1 A2 G TO-263 (D2PAK) (12PTxxH) (G)3 1(A1) ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current full sine wave (180° conduction angle ) SYMBOL IT(RMS) TO-251/TO-252/TO-220AB/TO-263 TO-220AB insulated Average on-state current (180° conduction angle) IT(AV) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) ITSM I2t Value for fusing TEST CONDITIONS TO-251/TO-252/TO-220AB/TO-263 T c =105°C T c =90°C T c =105°C VALUE UNIT 12 A 8 A TO-220AB insulated T c =90°C F =50 Hz t = 20 ms 140 F =60 Hz t = 16.7 ms 145 I2t t p = 10 ms A 98 A2s Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F = 60 Hz T j = 125ºC 50 A/µs Peak gate current IGM T p = 20 µs T j = 125ºC 4 A 1 W Average gate power dissipation Storage temperature range Operating junction temperature range PG(AV) T j =125ºC Tstg - 40 to + 150 Tj - 40 to + 125 ºC www.nellsemi.com Page 1 of 7 RoHS 12PT Series RoHS SEMICONDUCTOR STANDARD ELECTRICAL SPECIFICATIONS (TJ = 25 ºC, unless otherwise specified) 12PTxxxx SYMBOL Unit TEST CONDITIONS Min. Max. Max. IGT VGT V D = 12 V, R L = 33Ω T - 0.5 5 15 2 mA 1.3 V 0.2 V VGD V D = V DRM , R L = 3.3KΩ IH I T = 500 mA, gate open Max. 15 30 mA IL I G = 1.2 I GT Max. 30 60 mA T j = 125°C Min. 40 200 V/µs T j = 25°C Max. 1.6 V dV/dt T j = 125°C V D = 67% V DRM , gate open Min. VTM I TM = 24A, t P = 380 µs Vto Threshold voltage T j = 125°C Max. 0.85 V Rd Dynamic resistance T j = 125°C Max. 30 mΩ 5 µA 2 mA IDRM IRRM T j = 25°C V DRM = V RRM T j = 125°C (Tj = 25 ºC, unless otherwise specified) SENSITIVE ELECTRICAL CHARACTERISTICS SYMBOL TEST CONDITIONS 12PTxxxx-S IGT VGT Max. Unit Max. 200 µA Max. 0.8 V Min. 0.1 V V D = 12 V, R L = 140Ω VGD V D = V DRM , R L = 3.3KΩ, R GK =220 Ω VRG I RG = 10 µ A Min. 8 V IH I T = 50 mA , R GK = 1 KΩ Max. 5 mA IL I G = 1 mA , R GK = 1 KΩ Max. 6 mA T j = 125°C Min. 5 V/µs T j = 25°C Max. 1.6 V dV/dt T j = 125°C V D = 67% V DRM , R GK = 220Ω VTM I TM = 24A, t P = 380 µs Vto Threshold voltage T j = 125°C Max. 0.85 V Rd Dynamic resistance T j = 125°C Max. 30 mΩ IDRM IRRM T j = 25°C V DRM = V RRM, R GK = 220 Ω Max. T j = 125°C 5 µA 2 mA VALUE UNIT THERMAL RESISTANCE Parameter SYMBOL Rth(j-c) Rth(j-a) IPAK/DPAK/TO-220AB/TO-263 1.3 TO-220AB insulated 4.6 S = 0.5 cm 2 D-PAK 70 S = 1 cm 2 D²PAK 45 I-PAK 100 Junction to case (DC) Junction to ambient (DC) °C/W TO-220AB, TO-220AB insulated S=Copper surface under tab www.nellsemi.com Page 2 of 7 60 °C/W RoHS 12PT Series RoHS SEMICONDUCTOR PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER PACKAGE SENSITIVITY 1000 V 600 V 800 V 12PTxxA-S/12PTxxAl-S V V V 200 µA TO-220AB 12PTxxA-T/12PTxxAl-T V V V 0.5~5 mA TO-220AB 12PTxxA/12PTxxAl V V V 2~15 mA TO-220AB 12PTxxF-S V V V 200 µA I-PAK 12PTxxF-T V V V 0.5~5 mA I-PAK 12PTxxF V V V 2~15 mA I-PAK 12PTxxG-S V V V 200 µA D-PAK 12PTxxG-T V V V 0.5~5 mA D-PAK 12PTxxG V V V 2~15 mA D-PAK 12PTxxH-S V V V 20 µA D²-PAK 12PTxxH-T V V V 0.5~5 mA D²-PAK 12PTxxH V V V 2~15 mA D²-PAK ORDERING INFORMATION MARKING PACKAGE WEIGHT , BASE Q TY DELIVERY MODE 12PTxxA-y 12PTxxA-y TO-220AB 2.0g 50 Tube 12PTxxAI-y 12PTxxAI-y TO-220AB (insulated) 2.3g 50 Tube 12PTxxF-y 12PTxxF-y TO-251(I-PAK) 0.40g 80 Tube 12PTxxG-y 12PTxxG-y TO-252(D-PAK) 0.38g 80 Tube 12PTxxH-y 12PTxxH-y TO-263(D²-PAK) 2.0g 50 Tube ORDERING TYPE Note: xx = voltage, y = sensitivity ORDERING INFORMATION SCHEME 12 PT 06 Current 12 = 12A, IT(RMS) SCR series Voltage Code 06 = 600V 08 = 800V 10 = 1000V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) F = TO-251 (I-PAK) G = TO-252 (D-PAK) H = TO-263 (D²PAK) IGT Sensitivity S = 70~200 µA T = 0.5~5 mA Blank = 2~15 mA www.nellsemi.com Page 3 of 7 - S RoHS 12PT Series RoHS SEMICONDUCTOR Fig.2 Average and DC on-state current versus case temperature I T(AV) (A) Fig.1 Maximum average power dissipation versus average on-state current P(W) 12 11 10 9 8 7 6 5 4 3 2 1 0 0 14 α=180° DC 12 10 α=180° TO-251/TO-252 TO-263/TO-220AB 8 6 TO-220AB Insulated 4 360° 2 I T(AV) (A) 1 2 3 α 6 5 4 7 8 0 9 25 75 50 100 125 Fig.4 Relative variation of thermal impedance junction to case versus pulse duration Fig.3 Average and DC on-state current versus ambient temperature (DPAK) 3.0 T case (°C) 0 K=[Zth(j-c)/Rth(j-c)] I T (AV)(A) 1.0 Device mounted on FR4 with Recommended pad layout 2.5 DC 2.0 0.5 D²PAK 1.5 α=180° DPAK 1.0 0.2 0.5 T amb (°C) 0.0 0 50 25 75 100 125 Fig.5 Relative variation of thermal impedance Junction to ambient versus pulse duration (DANK) 2.0 1.8 1.6 Device mounted on FR4 with Recommended pad layout DPAK I GT 1.0 0.8 TO-220AB/IPAK 1E+0 IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 1.4 1.2 D²PAK 1E+1 1E+2 Fig.6 Relative variation of gate trigger and holding current versus junction temperature for I GT =200 µ A K=[Zth(j-a)/Rth(j-a)] 1.00 0.10 t p (s) 0.1 1E+3 lH& IL R GK =1KΩ 0.6 0.4 0.01 1E-2 0.2 0.0 -40 t p (s) 1E-1 www.nellsemi.com 1E+0 1E+1 1E+2 5E+2 Page 4 of 7 T j (°C) -20 0 20 40 60 80 100 120 140 RoHS 12PT Series RoHS SEMICONDUCTOR Fig.8 Relative variation of holding current versus gate-cathode resistance (typical values) Fig.7 Relative variation of gate trigger and holding current versus junction temperature I H [R GK ] / I H [R GK =1KΩ] IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 5.0 4.5 5mA & 15mA Series 4.0 3.5 I GT 3.0 2.5 2.0 1.5 lH& IL 1.0 0.5 0.0 1E-2 T j (°C) -20 0 40 20 60 80 100 120 140 Fig.9 Relative variation of dV/dt immunity versus gate-cathode resistance (Typical values) 10.0 T j =25 ° C 200µA Series R GK (KΩ) 1E-1 1E+0 1E+1 Fig.10 Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values) for I GT =200µA dV/dt[R GK ] / dV/dt[R GK =220Ω] 4.0 T j =125 ° C V D =0.67 X V DRM dV/dt[C GK ] / dV/dt[R GK =220Ω] V D =0.67 X V DRM T j =125 ° C R GK =220Ω 3.5 3.0 2.5 2.0 1.0 1.5 1.0 0.5 R GK (KΩ) 0.1 0 200 600 400 1000 0 1200 Fig.11 Surge peak on-state current versus number of cycles 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 C GK (nF) 0.0 800 50 25 100 75 125 150 Fig.12 Non-repetitive surge peak on-state current and corresponding values of l²t versus sinusoidal pulse width I STM (A) I TSM (A),I²t(A²s) 2000 Tj inital=25 ° C I TSM 1000 t p =10ms One cycle Non repetitive T j initial=25 ° C dI/dt Iimitation 100 I²t Repetitive Tc=105 ° C 1 www.nellsemi.com Number of cycles 10 100 t p (ms) 10 1000 Page 5 of 7 0.01 0.10 1.00 10.00 RoHS 12PT Series RoHS SEMICONDUCTOR Fig.14 Thermal resistance junction to ambient versus copper surface under tab (D²PAK) Fig.13 On-state characteristics (maximum values) I TM (A) 200 100 R th (j-a)( ° C/W) 100 Tjmax V t0 =0.85V Rd=30mΩ Epoxy printed circuit board FR4 copper thickness = 35µm 80 60 Tj=max DPAK 10 40 Tj=25 ° C D²PAK 20 V TM (V) 1 0.0 0.5 1.0 1.5 2.0 2.5 S(cm²) 0 3.0 3.5 4 2 0 4.5 5.0 4.0 6 8 10 12 14 16 Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 15.32 (0.603) 14.55 (0.573) 16.13 (0.635) 15.87 (0.625) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 3 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 14.22 (0.560) 13.46 (0.530) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) TO-251 (I-PAK) 0.90 (0.035) 0.70 (0.028) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) 6.6(0.26) 2.4(0.095) 2.2(0.086) 6.4(0.52) 1.5(0.059) 5.4(0.212) 1.37(0.054) 5.2(0.204) 0.62(0.024) 0.48(0.019) 6.2(0.244) 4T 6(0.236) 16.3(0.641) 15.9(0.626) 1.9(0.075) 1.8(0.071) 0.85(0.033) 0.76(0.03) 9.4(0.37) 9(0.354) 0.65(0.026) 0.55(0.021) 4.6(0.181) 4.4(0.173) 0.62(0.024) 0.45(0.017) 2 (A2) (G)3 1(A1) www.nellsemi.com Page 6 of 7 18 20 RoHS 12PT Series RoHS SEMICONDUCTOR Case Style TO-252 (D-PAK) 2.4(0.095) 2.2(0.086) 6.6(0.259) 6.4(0.251) 1.5(0.059) 5.4(0.212) 5.2(0.204) 1.37(0.054) 0.62(0.024) 0.48(0.019) 2 1 2 3 9.35(0.368) 10.1(0.397) 0.89(0.035) 0.64(0.025) 1.14(0.045) 0.76(0.030) 2.28(0.090) 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) 4.57(0.180) TO-263(D 2 PAK) 10.45 (0.411) 9.65 (0.380) 4.83 (0.190) 4.06 (0.160) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) RoHS 1.40 (0.055) 1.14 (0.045) 1.40 (0.055) 1.19 (0.047) 15.85 (0.624) 15.00 (0.591) 0 to 0.254 (0 to 0.01) 2.79 (0.110) 2.29 (0.090) 0.940 (0.037) 0.686 (0.027) 0.53 (0.021) 0.36 (0.014) 2.67 (0.105) 2.41 (0.095) 3.56 (0.140) 5.20 (0.205) 4.95 (0.195) 2.79 (0.110) 2 (A2) (G)3 1(A1) www.nellsemi.com Page 7 of 7