Bulletin I2401 rev. A 07/00 50RIA SERIES MEDIUM POWER THYRISTORS Stud Version Features High current rating Excellent dynamic characteristics 50 A dv/dt = 1000V/µs option Superior surge capabilities Standard package Metric threads version available Types up to 1600V V DRM / V RRM Typical Applications Phase control applications in converters Lighting circuits Battery charges Regulated power supplies and temperature and speed control circuit Can be supplied to meet stringent military, aerospace and other high-reliability requirements Major Ratings and Characteristics Parameters IT(AV) I t A 94 90 °C 80 80 A @ 50Hz 1430 1200 A @ 60Hz 1490 1257 A @ 50Hz 10.18 7.21 KA2s @ 60Hz 9.30 6.58 KA2s 100 to 1200 1400 to 1600 V V DRM/V RRM tq Units 50 @ TC 2 50RIA 140 to 160 50 IT(RMS) ITSM 10 to 120 typical TJ www.irf.com 110 µs - 40 to 125 °C Case Style TO-208AC (TO-65) 1 50RIA Series Bulletin I2401 rev. A 07/00 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number Voltage V DRM /V RRM , max. repetitive VRSM , maximum non- I DRM /I RRM max. Code peak and off-state voltage (1) V repetitive peak voltage (2) V @ TJ = TJ max. 10 100 150 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 140 1400 1500 160 1600 1700 50RIA mA 15 (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs (2) For voltage pulses with tp ≤ 5ms On-state Conduction Parameter IT(AV) 140 to 160 Units Max. average on-state current 50 50 A @ Case temperature 94 90 °C IT(RMS) Max. RMS on-state current ITSM Max. peak, one-cycle non-repetitive surge current I2t 50RIA 10 to 120 Maximum I2t for fusing 80 80 A 1430 1200 A Conditions 180° sinusoidal conduction t = 10ms No voltage 1490 1257 t = 8.3ms reapplied 1200 1010 t = 10ms 100% VRRM t = 8.3ms reapplied Sinusoidal half wave, t = 10ms No voltage Initial TJ = TJ max. 1255 1057 10.18 7.21 9.30 6.58 t = 8.3ms reapplied 7.20 5.10 t = 10ms 100% VRRM t = 8.3ms reapplied KA2 s 6.56 4.65 I2√t Maximum I2√t for fusing 101.8 72.1 KA2√s VT(TO)1 Low level value of threshold 0.94 1.02 V 1.08 1.17 4.08 4.78 3.34 3.97 1.60 1.78 t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max. (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. voltage VT(TO)2 High level value of threshold (π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ max. voltage rt1 Low level value of on-state mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. slope resistance rt2 High level value of on-state (π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ max. slope resistance VTM Max. on-state voltage IH Maximum holding current 200 IL Latching current 400 V mA Ipk= 157 A, TJ = 25°C TJ = 25°C. Anode supply 22V, resistive load, Initial IT = 2A 2 Anode supply 6V, resistive load www.irf.com 50RIA Series Bulletin I2401 rev. A 07/00 Switching Parameter di/dt current td 50RIA Units Max. rate of rise of turned-on VDRM ≤ 600V 200 VDRM ≤ 1600V 100 ITM = (2x rated di/dt) A 0.9 TC = 25°C VDM = rated VDRM ITM = 10A dc resistive circuit Typical delay time A/µs µs tq Conditions TC = 125°C, VDM = rated VDRM Typical turn-off time 110 Gate pulse = 20V, 15Ω, tp = 6µs, tr = 0.1µs max. Gate pulse = 10V, 15Ω source, tp = 20µs TC = 125°C, ITM = 50A, reapplied dv/dt = 20V/µs dir/dt = -10A/µs, VR=50V Blocking Parameter dv/dt Max. critical rate of rise of off-state voltage 50RIA 200 500 (*) Units Conditions V/µs TJ = TJ max. linear to 100% rated VDRM TJ = TJ max. linear to 67% rated VDRM (*) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. 50RIA160S90. Triggering Parameter PGM Maximum peak gate power 50RIA PG(AV) Maximum average gate power 2.5 IGM Max. peak positive gate current 2.5 +VGM Maximum peak positive gate voltage -VGM W TJ = TJ max, t p ≤ 5ms A 20 V Maximum peak negative gate voltage IGT Units Conditions 10 10 DC gate current required 250 to trigger 100 50 TJ = 125°C DC gate voltage required 3.5 TJ = - 40°C to trigger 2.5 V IGD DC gate current not to trigger 5.0 mA VGD DC gate voltage not to trigger 0.2 V VGT www.irf.com TJ = - 40°C mA TJ = 25°C Max. required gate trigger current/voltage are the lowest value which will trigger all units 6V anode-to-cathode applied TJ = 25°C Max. gate current/ voltage not to TJ = TJ max VDRM = rated voltage trigger is the max. value which will not trigger any unit with rated TJ = TJ max VDRM anode-to-cathode applied 3 50RIA Series Bulletin I2401 rev. A 07/00 Thermal and Mechanical Specification Parameter 50RIA Units Conditions TJ Max. operating temperature range - 40 to 125 Tstg Max. storage temperature range - 40 to 125 °C 0.35 K/W DC operation 0.25 K/W Mounting surface, smooth, flat and greased Non-lubricated threads RthJC Max. thermal resistance, °C junction to case RthCS Max. thermal resistance, case to heatsink T Mounting torque wt Min. 2.8 (25) Nm Max. 3.4 (30) (lbf-in) 28 (1.0) g (oz) Approximate weight Case style TO-208AC (TO-65) See Outline Table ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.078 0.057 120° 0.094 0.098 90° 0.120 0.130 60° 0.176 0.183 30° 0.294 0.296 K/W Conditions TJ = TJ max. Ordering Information Table Device Code 50 RIA 160 S90 2 1 4 5 1 - Current code 2 - Essential part number 3 - Voltage code: Code x 10 = VRRM (See Voltage Rating Table) 4 - Critical dv/dt: None = 500V/µs (Standard value) S90 5 - = 1000V/µs (Special selection) None = Stud base TO-208AC (TO-65) 1/4" 28UNF-2A M 4 3 M = Stud base TO-208AC (TO-65) M6 X 1 www.irf.com 50RIA Series Bulletin I2401 rev. A 07/00 Outline Table Case Style TO-208AC (TO-65) 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) All dimensions in millimeters (inches) 50RIA Series (100V to 1200V) RthJC (DC) = 0.35 K/W 120 Conduction Angle 110 30° 60° 100 90° 120° 180° 90 0 10 20 30 40 50 60 130 50RIA Series (100V to 1200V) RthJC (DC) = 0.35 K/W 120 110 Conduction Period 100 90 30° 80 0 10 20 60° 30 90° 120° 40 180° 50 60 DC 70 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristic Fig. 2 - Current Ratings Characteristic www.irf.com 80 5 50RIA Series 80 180° 120° 90° 60° 30° 70 60 50 RMS Limit 40 30 Conduction Angle 20 50RIA Series (100V to 1200V) TJ = 125°C 10 0 0 10 20 30 40 50 DC 180° 120° 90° 60° 30° 90 80 70 60 50 RMS Limit 40 30 Conduction Period 20 50RIA Series (100V to 1200V) TJ = 125°C 10 0 0 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1000 900 800 700 50RIA Series (100V to 1200V) 1 10 1500 100 40 50 60 70 80 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRM Reapplied 1400 1300 1200 1100 1000 900 800 700 50RIA Series (100V to 1200V) 600 500 0.01 50RIA Series (1400V to 1600V) RthJC (DC) = 0.35 K/W 120 110 Conduction Angle 30° 100 60° 90° 120° 180° 90 0 5 10 15 20 25 30 35 40 45 50 55 Average On-state Current (A) Fig. 7 - Current Ratings Characteristics 1 Fig. 6 - Maximum Non-Repetitive Surge Current Maximum Allowable Case Temperature (°C) 130 0.1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Allowable Case Temperature (°C) 30 Average On-state Current (A) Number Of Equal Amplitude Half Cycle Current Pulses (N) 6 20 Fig. 4 - On-state Power Loss Characteristics 1100 80 10 Average On-state Current (A) 1200 600 100 Fig. 3 - On-state Power Loss Characteristics 1300 Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) I2401 rev. A 07/00 Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Bulletin 130 50RIA Series (1400V to 1600V) RthJC (DC) = 0.35 K/W 120 110 Conduction Period 100 90 30° 80 0 90° 60° 120° 180° DC 10 20 30 40 50 60 70 80 90 Average On-state Current (A) Fig. 8 - Current Ratings Characteristics www.irf.com 50RIA Series 180° 120° 90° 60° 30° 80 70 60 50 RMS Limit 40 30 Conduction Angle 20 50RIA Series (1400V to 1600V) TJ = 125°C 10 0 0 5 Peak Half Sine Wave On-state Current (A) 10 15 20 25 30 35 40 45 50 120 DC 180° 120° 90° 60° 30° 110 100 90 80 70 60 RMS Limit 50 40 Conduction Period 30 50RIA Series (1400V to 1600V) TJ = 125°C 20 10 0 0 20 30 40 50 60 70 80 Average On-state Current (A) Fig. 9 - On-state Power Loss Characteristics Fig. 10 - On-state Power Loss Characteristics At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1000 900 800 700 600 50RIA Series (1400V to 1600V) 1 10 1200 100 1000 900 800 700 600 500 50RIA Series (1400V to 1600V) 400 0.01 0.1 1 Pulse Train Duration (s) Fig. 11 - Maximum Non-Repetitive Surge Current Fig. 12 - Maximum Non-Repetitive Surge Current 1000 100 TJ = 25°C TJ = 125°C 10 50RIA Series (100V to 1200V) 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Current (A) 1000 1 0.5 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125°C No Voltage Reapplied Rated VRRMReapplied 1100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Instantaneous On-state Current (A) 10 Average On-state Current (A) 1100 500 Maximum Average On-state Power Loss (W) 90 Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Bulletin I2401 rev. A 07/00 100 TJ = 25°C 10 TJ = 125°C 50RIA Series (1400V to 1600V) 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Instantaneous On-state Voltage (V) Instantaneous On-state Voltage (V) Fig. 13 - Forward Voltage Drop Characteristics Fig. 14 - Forward Voltage Drop Characteristics www.irf.com 7 50RIA Series I2401 rev. A 07/00 Transient Thermal Impedance ZthJ-hs (K/W) Bulletin 1 Steady State Value RthJ-hs = 0.35 K/W 0.1 50RIA Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 15 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30 ohms; tr<=0.5 µs b) Recommended load line for <=30% rated di/dt : 20V, 65 ohms tr<=1 µs 10 (b) (a) Tj=125 °C 1 VGD IGD 0.1 0.001 0.01 (1) PGM = 10W, tp = 5ms (2) PGM = 20W, tp = 2.5ms (3) PGM = 50W, tp = 1ms (4) PGM = 100W, tp = 500µs Tj=-40 °C Tj=25 °C Instantaneous Gate Voltage (V) 100 (1) (2) 50RIA Series 0.1 1 (3) (4) Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 16 - Gate Characteristics 8 www.irf.com