DATA SHEET THYRISTORS 5P4SMA,5P6SMA 5 A MOLD ISOLATED SCR DESCRIPTION PACKAGE DRAWING (Unit: mm) The 5P4SMA and 5P6SMA are P gate all diffused mold type 4.7 MAX. 10.5 MAX. thyristor granted 5 A on-state average current (TC = 94°C), with 7 ±0.2 φ 3.2 ±0.2 3.0 MAX. • 80 A surge current 2.8 ±0.2 • Mold isolated plastic package 1 • High voltage: VDRM, VRRM = 400 V (5P4SMA) 2 3 5 ±0.2 VDRM, VRRM = 600 V (5P6SMA) APPLICATIONS • Motor speed control for household appliance • Temperature control for heater and constant temperature box • Constant voltage power source and battery charger * 13.5 MIN. 17 ±0.2 FEATURES 12 ±0.2 5 ±0.1 rated voltages up to 600 V. 0.8 ±0.1 1.3 ±0.2 1.5 ±0.2 2.54 TYP. 2.54 TYP. • Automotive application such as regulator 0.5 ±0.1 2.5 ±0.1 1: Cathode 2: Anode 3: Gate • Various solid state relay, etc. *: TC test bench-mark Standard weight: 2 g The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17163EJ3V0DS00 (3rd edition) (Previous No. SC-2101) Date Published June 2004 NS CP(K) Printed in Japan The mark shows major revised points. 1988 5P4SMA,5P6SMA MAXIMUM RATINGS Parameter Symbol 5P4SMA 5P6SMA Unit Remarks Non-repetitive Peak Reverse Voltage VRSM 500 700 V − Non-repetitive Peak Off-state Voltage VDSM 500 700 V − Repetitive Peak Reverse Voltage VRRM 400 600 V − Repetitive Peak Off-state Voltage VDRM 400 600 V − Average On-state Current IT(AV) 5 (TC = 94°C, single phase half wave, θ = 180°) A Refer to Figure 11. Effective On-state Current IT(RMS) 8 A ITSM 80 (50 Hz, sine half wave, 1 cycle) A Surge On-state Current Refer to Figure 2. 88 (60 Hz, sine half wave, 1 cycle) Fusing Current 2 ∫ iT dt 28 (1 ms ≤ t ≤ 10 ms) As 2 − Critical Rate Rise of On-state Current dIT/dt 50 A/µs − PGM 5 (f ≥ 50 Hz, Duty ≤ 10%) W Refer to Figure 3. PG(AV) 0.5 W Peak Gate Forward Current IFGM 2 (f ≥ 50 Hz, Duty ≤ 10%) A − Peak Gate Reverse Voltage VRGM 10 V − Tj −40~+125 °C − Tstg −55~+150 °C − Peak Gate Power Dissipation Average Gate Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tj = 25°C) Parameter Repetitive Peak Reverse Current Symbol IRRM Conditions VRM = VRRM MIN. TYP. MAX. Unit Remarks Tj = 25°C − − 100 µA − Tj = 125°C − − 2 mA − Tj = 25°C − − 100 µA − Repetitive Peak Off-state Current IDRM VDM = VDRM − − 2 mA − On-state Voltage VTM ITM = 10 A − − 1.4 V Refer to Figure 1. Refer to Figure 4. Tj = 125°C Gate Trigger Current IGT VDM = 6 V, RL = 100 Ω − − 10 mA Gate Trigger Voltage VGT VDM = 6 V, RL = 100 Ω − − 1.5 V 0.2 − − V − − 6 − mA − − 40 − V/µs − − 50 − µs − Gate Non-trigger Voltage VGD IH Holding Current Critical Rate Rise of Off-state Voltage Circuit Commuted Turn-off Time dv/dt tq Tj = 125°C, VDM = 1 VDRM 2 VDM = 24 V, ITM = 10 A Tj = 125°C, VDM 2 = 3 VDRM Tj = 125°C, ITM = 5 A, diR/dt = 15 A/µs, VR ≥ 25 V, VDM = Thermal Resistance 2 Note 2 3 VDRM, dVD/dt = 10 V/µs Rth(j-c) Junction to case DC − − 4.2 °C/W Refer to Figure 13. Rth(j-a) Junction to ambient DC − − 60 °C/W Data Sheet D17163EJ3V0DS 5P4SMA,5P6SMA TYPICAL CHARACTERISTICS Figure 1. iT vs. νT CHARACTERISTIC Figure 2. ITSM RATING 100 MAX. ITSM - Surge On-state Current - A iT - On-state Current - A 50 Initial Tj = 125˚C 140 Tj = 25˚C 125˚C 10 5.0 ITSM 10 ms 20 ms 120 100 80 60 Hz 50 Hz 60 40 20 0 1.0 0 1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.4 4.0 5 10 νT - On-state Voltage - V Figure 3. VFG vs. IFG RATING Figure 4. VGT vs. IGT CHARACTERISTIC 5 Tj = −40 to +125˚C 8 6 VDM = 6 V RL = 100 Ω VGT - Gate Trigger Voltage - V VFG - Gate Forward Voltage - V 100 Cycles 10 PGM = 5 W f = 50 Hz Duty≤10% 4 PG(AV) = 0.5 W 2 4 3 Tj = −40˚C 2 0˚C 25˚C 1 0 0 0 1.0 0 2.0 5 IFG - Gate Forward Current - A Figure 5. IGT vs. TA CHARACTERISTIC 15 20 25 30 Figure 6. VGT vs. TA CHARACTERISTIC 1.0 VGT - Gate Trigger Voltage - V 10 1 0.1 −40 10 IGT - Gate Trigger Current - mA 100 IGT - Gate Trigger Current - mA 50 −20 0 20 40 60 80 0.8 0.6 0.4 0.2 100 TA - Ambient Temperature - °C 0 −40 −20 0 20 40 60 80 100 TA - Ambient Temperature - °C Data Sheet D17163EJ3V0DS 3 5P4SMA,5P6SMA Figure 7. iGT vs. τ CHARACTERISTIC Figure 8. νGT vs.- τ CHARACTERISTIC 1000 1.0 TA = 25˚C νGT - Gate Trigger Voltage - V iGT - Gate Trigger Current - mA TA = 25˚C 100 10 1 0.8 0.6 0.4 0.2 0.1 1 10 100 0 1000 1 10 τ - Pulse Width - µs Figure 10. PT(AV) vs. IT(AV) CHARACTERISTIC PT(AV) - On-state Average Power Dissipation - W Figure 9. IH vs. TA CHARACTERISTIC IH - Holding Current - mA 10 −20 0 20 40 60 80 100 TA - Ambient Temperature - °C 20 18 16 180˚ 14 12 DC 10 θ = 180˚ 90˚ 8 60˚ 6 30˚ 4 120˚ 2 0 0 2 4 6 8 10 12 IT(AV) - Average On-state Current - A Figure 12. TA vs. IT(AV) RATING 140 140 0˚ 120 θ 180˚ 100 80 60 θ = 180˚ 30˚ 40 20 DC θ 0˚ 120 Conduction angle TA - Ambient Temperature - °C TC - Case Temperature - °C θ 0˚ Conduction angle Figure 11. TC vs. IT(AV) RATING 80 60 40 60˚ 90˚ 120˚ DC 20 60˚ 90˚ 120˚ θ = 180˚ 30˚ 0 0 2 4 6 8 10 12 IT(AV) - Average On-state Current - A 0 1.0 2.0 IT(AV) - Average On-state Current - A Data Sheet D17163EJ3V0DS 180˚ Conduction angle 100 0 4 1000 τ - Pulse Width - µs 20 0 −40 100 5P4SMA,5P6SMA Zth - Transient Thermal Impedance - °C/W Figure 13. Zth CHARACTERISTIC 100 Junction to ambient 10 Junction to case 1 0.1 0.01 0.1 1 10 100 1000 10000 t - Time - s Data Sheet D17163EJ3V0DS 5 5P4SMA,5P6SMA • The information in this document is current as of June, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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