NEC 5P4SMA

DATA SHEET
THYRISTORS
5P4SMA,5P6SMA
5 A MOLD ISOLATED SCR
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 5P4SMA and 5P6SMA are P gate all diffused mold type
4.7 MAX.
10.5 MAX.
thyristor granted 5 A on-state average current (TC = 94°C), with
7 ±0.2
φ 3.2 ±0.2
3.0 MAX.
• 80 A surge current
2.8 ±0.2
• Mold isolated plastic package
1
• High voltage: VDRM, VRRM = 400 V (5P4SMA)
2 3
5 ±0.2
VDRM, VRRM = 600 V (5P6SMA)
APPLICATIONS
• Motor speed control for household appliance
• Temperature control for heater and constant temperature box
• Constant voltage power source and battery charger
*
13.5 MIN.
17 ±0.2
FEATURES
12 ±0.2
5 ±0.1
rated voltages up to 600 V.
0.8 ±0.1
1.3 ±0.2
1.5 ±0.2
2.54 TYP.
2.54 TYP.
• Automotive application such as regulator
0.5 ±0.1
2.5 ±0.1
1: Cathode
2: Anode
3: Gate
• Various solid state relay, etc.
*: TC test bench-mark
Standard weight: 2 g
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17163EJ3V0DS00 (3rd edition)
(Previous No. SC-2101)
Date Published June 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1988
5P4SMA,5P6SMA
MAXIMUM RATINGS
Parameter
Symbol
5P4SMA
5P6SMA
Unit
Remarks
Non-repetitive Peak Reverse Voltage
VRSM
500
700
V
−
Non-repetitive Peak Off-state Voltage
VDSM
500
700
V
−
Repetitive Peak Reverse Voltage
VRRM
400
600
V
−
Repetitive Peak Off-state Voltage
VDRM
400
600
V
−
Average On-state Current
IT(AV)
5 (TC = 94°C, single phase half wave, θ = 180°)
A
Refer to Figure 11.
Effective On-state Current
IT(RMS)
8
A
ITSM
80 (50 Hz, sine half wave, 1 cycle)
A
Surge On-state Current
Refer to Figure 2.
88 (60 Hz, sine half wave, 1 cycle)
Fusing Current
2
∫ iT dt
28 (1 ms ≤ t ≤ 10 ms)
As
2
−
Critical Rate Rise of On-state Current
dIT/dt
50
A/µs
−
PGM
5 (f ≥ 50 Hz, Duty ≤ 10%)
W
Refer to Figure 3.
PG(AV)
0.5
W
Peak Gate Forward Current
IFGM
2 (f ≥ 50 Hz, Duty ≤ 10%)
A
−
Peak Gate Reverse Voltage
VRGM
10
V
−
Tj
−40~+125
°C
−
Tstg
−55~+150
°C
−
Peak Gate Power Dissipation
Average Gate Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Parameter
Repetitive Peak Reverse Current
Symbol
IRRM
Conditions
VRM = VRRM
MIN.
TYP.
MAX.
Unit
Remarks
Tj = 25°C
−
−
100
µA
−
Tj = 125°C
−
−
2
mA
−
Tj = 25°C
−
−
100
µA
−
Repetitive Peak Off-state Current
IDRM
VDM = VDRM
−
−
2
mA
−
On-state Voltage
VTM
ITM = 10 A
−
−
1.4
V
Refer to Figure 1.
Refer to Figure 4.
Tj = 125°C
Gate Trigger Current
IGT
VDM = 6 V, RL = 100 Ω
−
−
10
mA
Gate Trigger Voltage
VGT
VDM = 6 V, RL = 100 Ω
−
−
1.5
V
0.2
−
−
V
−
−
6
−
mA
−
−
40
−
V/µs
−
−
50
−
µs
−
Gate Non-trigger Voltage
VGD
IH
Holding Current
Critical Rate Rise of Off-state Voltage
Circuit Commuted Turn-off Time
dv/dt
tq
Tj = 125°C, VDM
= 1 VDRM
2
VDM = 24 V, ITM = 10 A
Tj = 125°C, VDM
2
= 3 VDRM
Tj = 125°C, ITM = 5 A,
diR/dt = 15 A/µs, VR ≥ 25 V,
VDM =
Thermal Resistance
2
Note
2
3
VDRM, dVD/dt = 10 V/µs
Rth(j-c)
Junction to case DC
−
−
4.2
°C/W Refer to Figure 13.
Rth(j-a)
Junction to ambient DC
−
−
60
°C/W
Data Sheet D17163EJ3V0DS
5P4SMA,5P6SMA
TYPICAL CHARACTERISTICS
Figure 1. iT vs. νT CHARACTERISTIC
Figure 2. ITSM RATING
100
MAX.
ITSM - Surge On-state Current - A
iT - On-state Current - A
50
Initial Tj = 125˚C
140
Tj = 25˚C
125˚C
10
5.0
ITSM
10 ms
20 ms
120
100
80
60 Hz
50 Hz
60
40
20
0
1.0
0
1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.4 4.0
5
10
νT - On-state Voltage - V
Figure 3. VFG vs. IFG RATING
Figure 4. VGT vs. IGT CHARACTERISTIC
5
Tj = −40 to
+125˚C
8
6
VDM = 6 V
RL = 100 Ω
VGT - Gate Trigger Voltage - V
VFG - Gate Forward Voltage - V
100
Cycles
10
PGM = 5 W
f = 50 Hz
Duty≤10%
4
PG(AV) = 0.5 W
2
4
3
Tj = −40˚C
2
0˚C
25˚C
1
0
0
0
1.0
0
2.0
5
IFG - Gate Forward Current - A
Figure 5. IGT vs. TA CHARACTERISTIC
15
20
25
30
Figure 6. VGT vs. TA CHARACTERISTIC
1.0
VGT - Gate Trigger Voltage - V
10
1
0.1
−40
10
IGT - Gate Trigger Current - mA
100
IGT - Gate Trigger Current - mA
50
−20
0
20
40
60
80
0.8
0.6
0.4
0.2
100
TA - Ambient Temperature - °C
0
−40
−20
0
20
40
60
80
100
TA - Ambient Temperature - °C
Data Sheet D17163EJ3V0DS
3
5P4SMA,5P6SMA
Figure 7. iGT vs. τ CHARACTERISTIC
Figure 8. νGT vs.- τ CHARACTERISTIC
1000
1.0
TA = 25˚C
νGT - Gate Trigger Voltage - V
iGT - Gate Trigger Current - mA
TA = 25˚C
100
10
1
0.8
0.6
0.4
0.2
0.1
1
10
100
0
1000
1
10
τ - Pulse Width - µs
Figure 10. PT(AV) vs. IT(AV) CHARACTERISTIC
PT(AV) - On-state Average Power Dissipation - W
Figure 9. IH vs. TA CHARACTERISTIC
IH - Holding Current - mA
10
−20
0
20
40
60
80
100
TA - Ambient Temperature - °C
20
18
16
180˚
14
12
DC
10
θ = 180˚
90˚
8
60˚
6
30˚
4
120˚
2
0
0
2
4
6
8
10
12
IT(AV) - Average On-state Current - A
Figure 12. TA vs. IT(AV) RATING
140
140
0˚
120
θ
180˚
100
80
60
θ = 180˚
30˚
40
20
DC
θ
0˚
120
Conduction angle
TA - Ambient Temperature - °C
TC - Case Temperature - °C
θ
0˚
Conduction angle
Figure 11. TC vs. IT(AV) RATING
80
60
40
60˚
90˚
120˚
DC
20
60˚
90˚
120˚
θ = 180˚
30˚
0
0
2
4
6
8
10
12
IT(AV) - Average On-state Current - A
0
1.0
2.0
IT(AV) - Average On-state Current - A
Data Sheet D17163EJ3V0DS
180˚
Conduction angle
100
0
4
1000
τ - Pulse Width - µs
20
0
−40
100
5P4SMA,5P6SMA
Zth - Transient Thermal Impedance - °C/W
Figure 13. Zth CHARACTERISTIC
100
Junction to ambient
10
Junction to case
1
0.1
0.01
0.1
1
10
100
1000
10000
t - Time - s
Data Sheet D17163EJ3V0DS
5
5P4SMA,5P6SMA
• The information in this document is current as of June, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1