NEC NNCD6.8H

DATA SHEET
ESD NOISE CLIPPING DIODE
NNCD5.6H, NNCD6.8H
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE
(QUAD TYPE: COMMON ANODE)
5-PIN SUPER SMALL MINI MOLD
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
This product series is a low capacitance type diode developed for ESD
2.1 ± 0.1
(Electrostatic Discharge) absorption. Based on the IEC-61000-4-2 test on
1.25
electromagnetic interference (EMI), the diode assures an endurance of no
With four elements mounted in the 5-pin super mini mold package, that
0.2 −0
+0.1
0.65
5
2
0.65
circuit protection.
1
1.9
2.0 ± 0.2
less then 30 kV, thus making itself most suitable for external interface
product can cope with more high density assembling.
+0.1
0.7
0.9 ± 0.1
FEATURES
• Base on the electrostatic discharge immunity test (IEC 61000-4-2)
4
0.16 −0.05
3
0 to 0.1
product assures the minimum endurance of 30 kV.
• With 4 elements mounted (common anode).
Mounted in the SC-88A package, the product cans achiever high
density and automatic packaging.
ELECTRODE CONNECTION
5
APPLICATIONS
4
• External interface circuit ESD absorption
1. K1: Cathode1
2. A: Anode (common)
3. K2: Cathode2
4. K3: Cathode3
5. K4: Cathode4
• Circuits for Waveform clipper, Surge absorber
1
2
3
MAXIMUM RATINGS (TA = 25°C)
ITEM
SYMBOL
Power Dissipation
P
Surge Reverse Power
PRSM
Junction Temperature
Storage Temperature
Tj
Tstg
RATING
UNIT
200
mW
85 (t = 10 µs, 1 pulse)
REMARK
Total
W
150
o
−55 to +150
o
C
C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15419EJ1V0DS00 (1st edition)
Date Published April 2003 NS CP(K)
Printed in Japan
2002
NNCD5.6H, NNCD6.8H
ELECTRICAL CHARACTERISTICS (TA = 25°C) (A - K1, A - K2, A - K3, A - K4)
TYPE No.
BREAKDOWN
VOLTAGE
CAPACITANCE
REVERSE
DYNAMIC
Ct (pF)
LEAKAGE
IMPEDANCE
Note1
IR (µA)
VBR (V)
NNCD5.6H
MIN.
MAX.
IT (mA)
TYP.
5.3
6.3
5
110
Condition
ESD VOLTAGE
Note2
(kV)
Zz (Ω)
MAX.
VR (V)
MAX.
IT (mA)
5
2.5
110
5
MIN.
30
6.2
7.1
5
90
f = 1 MHz
R = 330 Ω
Contact
2
3.5
Notes 1. Tested with pulse (40 ms).
2. Zz is measured IT given a small A.C. signal.
3. Based upon with IEC61000-4-2.
2
Condition
C = 150 pF
VR = 0 V
NNCD6.8H
Note3
Data Sheet D15419EJ1V0DS
40
5
discharge
NNCD5.6H, NNCD6.8H
TYPICAL CHARACTERISTICS (TA = 25°°C)
Figure 1. P vs. TA RATING
P - Power Dissipation - mW
250
200
150
100
50
0
0
25
50
75
100
125
150
TA - Ambient Temperature - °C
Figure 2. IT vs. VBR CHARACTERISTICS
Figure 3. IR vs. VBR CHARACTERISTICS
10000
NNCD5.6H
1m
100 µ
NNCD5.6H
IR - Reverse Leakage - nA
NNCD6.8H
10 m
10 µ
1000
NNCD6.8H
100
10
1
4.0
4.5
5.0
5.5
6.0
6.5
0
7.0
1
VBR - Breakdown Voltage - V
2
3
4
5
6
VBR - Breakdown Voltage - V
Figure 4. Ct vs. VR CHARACTERISTICS
120
100
Ct - Capacity between pins - pF
IT - On-state Current - A
100 m
80
NNCD5.6H
60
40
NNCD6.8H
20
0
0
1
2
3
4
5
6
VR - Reverse Voltage - V
Data Sheet D15419EJ1V0DS
3
NNCD5.6H, NNCD6.8H
Figure 5. SURGE RVERSE POWER RATING
TA = 25˚C
Non-repetitive
PRSM
PRSM - Surge Reverse Power - W
10000
1000
tr
NNCD[ ]H
100
10
1
1µ
10 µ
100 µ
1m
10 m
100 m
tr - Pulse Width - s
Figure 6. TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
Zth - Transient Thermal Impedance - °C/W
1000
625 oC/W
NNCD[ ]H
100
10
1
0.001
0.01
0.1
1
Time - s
4
Data Sheet D15419EJ1V0DS
10
100
1000
NNCD5.6H, NNCD6.8H
• The information in this document is current as of April, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1