ABB 5SGA30J2501

VDRM
ITGQM
ITSM
VT0
rT
VDClink
= 2500 V
= 3000 A
=
30 kA
=
1.5 V
= 0.33 mΩ
= 1400 V
Gate turn-off Thyristor
5SGA 30J2501
Doc. No. 5SYA1213-02 Jan. 05
• Patented free-floating silicon technology
• Low on-state and switching losses
• Annular gate electrode
• Industry standard housing
• Cosmic radiation withstand rating
Blocking
VGR ≥ 2V
VDRM
Repetitive peak off-state voltage
2500 V
VRRM
Repetitive peak reverse voltage
17 V
IDRM
Repetitive peak off-state current
≤
100 mA
VD = VDRM
VGR ≥ 2V
IRRM
Repetitive peak reverse current
≤
50 mA
VR = VRRM
RGK = ∞
VDClink
Permanent DC voltage for 100
1400 V
FIT failure rate
Ambient cosmic radiation at sea level in
open air.
Mechanical data (see Fig. 3)
Fm
A
Mounting force
min.
36 kN
max.
44 kN
Acceleration:
50 m/s2
Device unclamped
Device clamped
200 m/s2
M
Weight
1.3 kg
DS
Surface creepage distance
≥
33 mm
Da
Air strike distance
≥
15 mm
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5SGA 30J2501
GTO Data
On-state
ITAVM
Max. average on-state current
1300 A
ITRMS
Max. RMS on-state current
2040 A
ITSM
Max. peak non-repetitive
surge current
I2t
Limiting load integral
Half sine wave, TC = 85 °C
30 kA
tP =
10 ms
Tj =
125°C
51 kA
tP =
1 ms
After surge:
4.5x106 A2s
tP =
10 ms
VD = VR = 0V
1.3x106 A2s
tP =
1 ms
VT
On-state voltage
2.5 V
IT =
3000 A
VT0
Threshold voltage
1.5 V
IT =
400 - 4000 A
rT
Slope resistance
0.33 mΩ
IH
Holding current
100 A
VGT
Gate trigger voltage
1.2 V
VD
= 24 V
IGT
Gate trigger current
4 A
RA
= 0.1 Ω
VGRM
Repetitive peak reverse voltage
17 V
IGRM
Repetitive peak reverse current
50 mA
VGR
= VGRM
500 A/µs
f = 200Hz
IT = 3000 A,
1000 A/µs
f = 1Hz
IGM = 30 A, diGdt = 20 A/µs
2.5 µs
VD =
Tj =
125 °C
Tj =
25 °C
Tj = 25 °C
Gate
Turn-on switching
di/dtcrit
Max. rate of rise of on-state
current
td
Delay time
tr
Rise time
ton(min)
Min. on-time
Eon
Turn-on energy per pulse
5 µs
100 µs
2 Ws
IT
0.5 VDRM Tj
Tj = 125 °C
=
125 °C
=
3000 A
di/dt =
300 A/µs
IGM =
30 A
diG/dt =
20 A/µs
CS =
5 µF
RS
=
5Ω
Turn-off switching
ITGQM
Max controllable turn-off
3000 A
VDM = VDRM
diGQ/dt =
CS
= 5 µF
LS
25 µs
VD
= ½ VDRM VDM
3 µs
Tj
=
current
ts
Storage time
tf
Fall time
toff(min)
Min. off-time
100 µs
ITGQ = ITGQM
Eoff
Turn-off energy per pulse
4.7 Ws
CS
=
IGQM
Peak turn-off gate current
LS
≤
1000 A
≤
0.3 µH
=
VDRM
125 °C diGQ/dt =
5 µF RS
40 A/µs
=
40 A/µs
5Ω
0.3 µH
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1213-02 Jan. 05
page 2 of 6
5SGA 30J2501
Thermal
Tj
Storage and operating
-40...125°C
junction temperature range
RthJC
RthCH
Thermal resistance
22 K/kW
Anode side cooled
junction to case
27 K/kW
Cathode side cooled
12 K/kW
Double side cooled
Thermal resistance case to
6 K/kW
Single side cooled
heat sink
3 K/kW
Double side cooled
Analytical function for transient thermal
impedance:
4
Z thJC (t) =
∑
i=1
R i(1 - e - t / τ i )
i
1
2
3
4
RI (K/kW)
5.4
4.5
1.7
0.4
τi (s)
1.2
0.17
0.01
0.001
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1213-02 Jan. 05
page 3 of 6
5SGA 30J2501
Fig. 1
On-state characteristics
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1213-02 Jan. 05
page 4 of 6
5SGA 30J2501
Fig. 2 General current and voltage waveforms with GTO-specific symbols
Fig. 3
Outline drawing. All dimensions are in
millimeters and represent nominal values
unless stated otherwise.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1213-02 Jan. 05
page 5 of 6
5SGA 30J2501
Reverse avalanche capability
In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate
value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then
driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time
and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative
during this time. Recommendation : VGR = 10… 15 V.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax
+41 (0)58 586 1306
Email
[email protected]
Internet www.abbsem.com
Doc. No. 5SYA1213-02 Jan. 05