VDRM ITGQM ITSM VT0 rT VDClink = 2500 V = 3000 A = 30 kA = 1.5 V = 0.33 mΩ = 1400 V Gate turn-off Thyristor 5SGA 30J2501 Doc. No. 5SYA1213-02 Jan. 05 • Patented free-floating silicon technology • Low on-state and switching losses • Annular gate electrode • Industry standard housing • Cosmic radiation withstand rating Blocking VGR ≥ 2V VDRM Repetitive peak off-state voltage 2500 V VRRM Repetitive peak reverse voltage 17 V IDRM Repetitive peak off-state current ≤ 100 mA VD = VDRM VGR ≥ 2V IRRM Repetitive peak reverse current ≤ 50 mA VR = VRRM RGK = ∞ VDClink Permanent DC voltage for 100 1400 V FIT failure rate Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 3) Fm A Mounting force min. 36 kN max. 44 kN Acceleration: 50 m/s2 Device unclamped Device clamped 200 m/s2 M Weight 1.3 kg DS Surface creepage distance ≥ 33 mm Da Air strike distance ≥ 15 mm ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SGA 30J2501 GTO Data On-state ITAVM Max. average on-state current 1300 A ITRMS Max. RMS on-state current 2040 A ITSM Max. peak non-repetitive surge current I2t Limiting load integral Half sine wave, TC = 85 °C 30 kA tP = 10 ms Tj = 125°C 51 kA tP = 1 ms After surge: 4.5x106 A2s tP = 10 ms VD = VR = 0V 1.3x106 A2s tP = 1 ms VT On-state voltage 2.5 V IT = 3000 A VT0 Threshold voltage 1.5 V IT = 400 - 4000 A rT Slope resistance 0.33 mΩ IH Holding current 100 A VGT Gate trigger voltage 1.2 V VD = 24 V IGT Gate trigger current 4 A RA = 0.1 Ω VGRM Repetitive peak reverse voltage 17 V IGRM Repetitive peak reverse current 50 mA VGR = VGRM 500 A/µs f = 200Hz IT = 3000 A, 1000 A/µs f = 1Hz IGM = 30 A, diGdt = 20 A/µs 2.5 µs VD = Tj = 125 °C Tj = 25 °C Tj = 25 °C Gate Turn-on switching di/dtcrit Max. rate of rise of on-state current td Delay time tr Rise time ton(min) Min. on-time Eon Turn-on energy per pulse 5 µs 100 µs 2 Ws IT 0.5 VDRM Tj Tj = 125 °C = 125 °C = 3000 A di/dt = 300 A/µs IGM = 30 A diG/dt = 20 A/µs CS = 5 µF RS = 5Ω Turn-off switching ITGQM Max controllable turn-off 3000 A VDM = VDRM diGQ/dt = CS = 5 µF LS 25 µs VD = ½ VDRM VDM 3 µs Tj = current ts Storage time tf Fall time toff(min) Min. off-time 100 µs ITGQ = ITGQM Eoff Turn-off energy per pulse 4.7 Ws CS = IGQM Peak turn-off gate current LS ≤ 1000 A ≤ 0.3 µH = VDRM 125 °C diGQ/dt = 5 µF RS 40 A/µs = 40 A/µs 5Ω 0.3 µH ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1213-02 Jan. 05 page 2 of 6 5SGA 30J2501 Thermal Tj Storage and operating -40...125°C junction temperature range RthJC RthCH Thermal resistance 22 K/kW Anode side cooled junction to case 27 K/kW Cathode side cooled 12 K/kW Double side cooled Thermal resistance case to 6 K/kW Single side cooled heat sink 3 K/kW Double side cooled Analytical function for transient thermal impedance: 4 Z thJC (t) = ∑ i=1 R i(1 - e - t / τ i ) i 1 2 3 4 RI (K/kW) 5.4 4.5 1.7 0.4 τi (s) 1.2 0.17 0.01 0.001 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1213-02 Jan. 05 page 3 of 6 5SGA 30J2501 Fig. 1 On-state characteristics ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1213-02 Jan. 05 page 4 of 6 5SGA 30J2501 Fig. 2 General current and voltage waveforms with GTO-specific symbols Fig. 3 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1213-02 Jan. 05 page 5 of 6 5SGA 30J2501 Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 µs and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10… 15 V. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)58 586 1419 Fax +41 (0)58 586 1306 Email [email protected] Internet www.abbsem.com Doc. No. 5SYA1213-02 Jan. 05