VDRM VDSM IT(AV)M IT(RMS) ITSM V(T0) rT = = = = = = = 8000 8500 1200 1880 35×103 1.25 0.48 V V A A A V mΩ Phase Control Thyristor 5STP 12N8500 Doc. No. 5SYA1044-02 Nov. 04 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications • Optimum power handling capability • Interdigitated amplifying gate Blocking Maximum rated values 1) 5STP 12N8500 5STP 12N8200 5STP 12N7800 Symbol Conditions VDSM, VRSM f = 5 Hz, tp = 10 ms 8500 V 8200 V 7800 V VDRM, VRRM f = 50 Hz, tp = 10 ms 8000 V 7700 V 7300 V VRSM tp = 5 ms, single pulse 9000 V 8600 V 8200 V dV/dtcrit Exp. to 5360 V, Tvj = 90°C 2000 V/µs Characteristic values Parameter Symbol Conditions min typ max Unit Forward leakage current IDSM VDSM, Tvj = 90°C 1000 mA Reverse leakage current IRSM VRSM, Tvj = 90°C 400 mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min typ 81 90 max Unit 108 kN Device unclamped 50 m/s 2 Device clamped 100 m/s 2 Characteristic values Parameter Symbol Conditions Weight m Housing thickness H Surface creepage distance DS FM = 90 kN, Ta = 25 °C min typ 35.3 56 Air strike distance Da 22 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit 2.9 kg 36 mm mm mm 5STP 12N8500 On-state Maximum rated values 1) Parameter Symbol Conditions Average on-state current IT(AV)M RMS on-state current IT(RMS) Peak non-repetitive surge current ITSM Limiting load integral I2t Peak non-repetitive surge current ITSM Limiting load integral I2t min typ Half sine wave, Tc = 70°C max Unit 1200 A 1880 A 3 tp = 10 ms, Tvj = 90 °C, 35×10 VD = VR = 0 V A 6 6.13×10 3 38×10 tp = 8.3 ms, Tvj = 90 °C, VD = VR = 0 V A2s A 6 5.99×10 A2s Characteristic values Parameter Symbol Conditions On-state voltage VT IT = 1500 A, Tvj = 90 °C Threshold voltage V(T0) IT = 700 A - 2100 A, Tvj= 90 °C Slope resistance rT Holding current IH Latching current Switching Maximum rated values IL min typ max Unit 2 V 1.25 V 0.48 mΩ Tvj = 25 °C 150 mA Tvj = 90 °C 125 mA Tvj = 25 °C 600 mA Tvj = 90 °C 800 mA 1) Parameter Symbol Conditions Critical rate of rise of onstate current di/dtcrit Critical rate of rise of onstate current di/dtcrit Circuit-commutated turn-off tq time min Tvj = 90 °C, Cont. ITRM = 2000 A, f = 50 Hz VD ≤ 5360 V, Cont. IFG = A, tr = 0.5 µs f = 1Hz Tvj = 90°C, ITRM = 2000 A, VR = 200 V, diT/dt = -1 A/µs, VD ≤ 0.67⋅VDRM, dvD/dt = 20V/µs typ max Unit 250 A/µs 1000 A/µs 600 µs Characteristic values Parameter Symbol Conditions Recovery charge Qrr Tvj = 90°C, ITRM = A, VR = 200 V, diT/dt = -1 A/µs Gate turn-on delay time tgd VD = 0.4⋅VRM, IFG = 2 A, tr = 0.5 µs, Tvj = 25 °C min typ 2800 max Unit 3400 µAs 3 µs ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1044-02 Nov. 04 page 2 of 6 5STP 12N8500 Triggering Maximum rated values 1) Parameter Symbol Conditions Peak forward gate voltage VFGM min typ max 12 Unit V Peak forward gate current IFGM 10 A Peak reverse gate voltage VRGM 10 V Average gate power loss PG(AV) see Fig. 9 Characteristic values Parameter Symbol Conditions Gate-trigger voltage VGT Tvj = 25 °C min typ max 2.6 Unit V Gate-trigger current IGT Tvj = 25 °C 400 mA Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvjmax = 90 °C 0.3 V Gate non-trigger current IGD VD = 0.4 x VDRM, Tvjmax = 90°C 10 mA Thermal Maximum rated values 1) Parameter Symbol Conditions Operating junction temperature range Tvj min max Unit 90 °C 140 °C max Unit Double-side cooled Fm = 81...108 kN 5.7 K/kW Rth(j-c)A Anode-side cooled Fm = 81...108 kN 11.4 K/kW Rth(j-c)C Cathode-side cooled Fm = 81...108 kN 11.4 K/kW Double-side cooled Fm = 81...108 kN 1 K/kW Single-side cooled Fm = 81...108 kN 2 K/kW Storage temperature range Tstg typ -40 Characteristic values Parameter Symbol Conditions Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n Zth(j-c) (t) = ∑ R th i (1 - e-t/τ i ) i =1 i 1 2 3 4 Rth i(K/kW) 3.400 1.260 0.680 0.350 τi(s) 0.8685 0.1572 0.0219 0.0078 Fig. 1 Transient thermal impedance junction-to case. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1044-02 Nov. 04 page 3 of 6 5STP 12N8500 On-state characteristic model: VT = A + B ⋅ iT + C ⋅ ln(iT +1) + D ⋅ IT Valid for iT = 200 – 4000 A A B C D 1.9700e+0 -1.8000e-4 -3.0000e-1 6.2000e-2 Fig. 2 On-state characteristics. Tj=125°C, 10ms half sine Fig. 3 Max. on-state voltage characteristics Tcase (°C) 90 Double-sided cooling DC 180° rectangular 180° sine 120° rectangular 85 80 5STP 12N8500 75 70 0 200 400 600 800 1000 1200 1400 1600 1800 ITAV (A) Fig. 4 On-state power dissipation vs. mean on-state current. Turn-on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1044-02 Nov. 04 page 4 of 6 5STP 12N8500 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ≈ 2..5 A ≥ 1.5 IGT ≥ 2 A/µs ≤ 1 µs ≈ 5...20 µs diG/dt IGon 10 % tr t tp (IGM) tp (IGon) Fig. 8 Recommended gate current waveform. Fig. 9 Max. peak gate power loss. IRM(A) 400 300 ITRM = 2000 A max 200 Tj = Tjmax min 102 90 80 70 5STP 12N8500 60 50 40 30 1 Fig. 10 Recovery charge vs. decay rate of on-state current. 2 3 4 5 6 7 8 910 30 20 -diT/dt (A/µs) Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1044-02 Nov. 04 page 5 of 6 5STP 12N8500 Fig. 12 Device Outline Drawing. Related application notes: Doc. Nr Titel 5SYA2020 Design of RC-Snubber for Phase Control Applications 5SYA2034 Gate-drive Recommendations for PCT's 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1044-02 Nov. 04