UNISONIC TECHNOLOGIES CO., LTD 6N40 Preliminary Power MOSFET 6A, 400V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 6N40 is an N-Channel enhancement mode power MOSFET using UTC’s perfect planar stripe, DMOS technology to provide customers with superior switching performance and minimum on-state resistance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 6N40 is generally used in applications , such as electronic lamp ballasts based on half bridge topology and high efficiency switched mode power supplies. 1 TO-252 TO-220 FEATURES * RDS(ON)=1.0Ω @ VGS=10V * Fast switching speed * Improved dv/dt capability SYMBOL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 6N40L-TA3-T 6N40G-TA3-T TO-220 6N40L-TF3-T 6N40G-TF3-T TO-220F 6N40L-TN3-R 6N40G-TN3-R TO-252 Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd 1 1 G G G Pin Assignment 2 D D D TO-220F 3 S S S Packing Tube Tube Tape Reel 1 of 6 QW-R502-487.d 6N40 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 6 A Continuous ID 6 (Note 5) A Drain Current 24(Note 5) A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 330 mJ Avalanche Energy Repetitive (Note 2) EAR 8.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 73 Power Dissipation PD W TO-220F 38 TO-252 62.5 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L=19mH, IAS=5.5A, VDD= 50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤6A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 5. Drain current limited by maximum junction temperature THERMAL DATA PARAMETER TO-220 / TO-220F Junction to Ambient TO-252 TO-220 Junction to Case TO-220F TO-252 SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATINGS 62.5 110 1.71 3.31 2.0 UNIT °C/W °C/W 2 of 6 QW-R502-487.d 6N40 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL TEST CONDITIONS BVDSS VGS=0V, ID=250µA ID=250μA, Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ Referenced to 25°C VDS=400V, VGS=0V Drain-Source Leakage Current IDSS VDS=320V, TJ=125°C Forward VDS=0V ,VGS=+30V Gate-Source Leakage Current IGSS Reverse VDS=0V ,VGS=-30V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS=320V, VGS=10V, ID=6A Gate-Source Charge QGS (Note 1,2) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) VDD=200V, ID=6A, RG=25Ω Turn-ON Rise Time tR (Note 1,2) Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =6A, VGS=0V Body Diode Reverse Recovery Time trr VGS=0V, IS=6A, dIF/dt=100A/μs (Note 1) Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 400 V 0.54 V/°C 1 10 +100 -100 µA µA nA nA 0.8 4.0 1 V Ω 480 80 15 625 105 20 pF pF pF 16 2.3 8.2 13 65 21 38 20 nC nC nC ns ns ns ns 2.0 35 140 55 85 6 24 1.4 230 1.7 A A V ns μC 3 of 6 QW-R502-487.d 6N40 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-487.d 6N40 Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-487.d 6N40 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-487.d