P1 Eb B Gb Nov 27 ‘02 Ew R N Gz S Ev Gy P T Eu Gx T1 T2 Gu U Gv V Gw W DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without the express written consent of Fuji Electric Co.,Ltd. Power Semiconductor Development Dept. Matsumoto Factory Fuji Electric Co.,Ltd. 7MBR20UE060 Specification (Tentative) 1. Outline Drawing ( Unit : mm ) Module only designed for mounting on PCB with 1.6~1.8mm thickness 2. Equivalent circuit Nov 26 ‘02 MT6M04460 1 4 3. Absolute Maximum Ratings ( at Tc= 25oC unless otherwise specified) Inverter Items Symbols Collector-Emitter voltage VCES Gate-Emitter voltage VGES Ic Continuous Tc=TBD o Collector current Icp Collector Power Dissipation Brake Maximum Ratings 600 Conditions 1ms -Ic Continuous Pc 1 device Collector-Emitter voltage VCES Gate-Emitter voltage VGES Ic Continuous Icp 1ms Tc=TBD 40 72 Converter Pc Average Output Current Io Surge Current (Non-Repetitive) 2 It (Non-Repetitive) Isolation voltage between terminal and copper base(*1) between thermistor and others 600 V ±20 V 20 A 25 40 A 50 80 W 20 A IFSM Tj=150oC,10ms 105 A 2 half sine wave 55 A 2s 150 o C Tstg -40~ +125 o C Viso 2500 Tj Storage temperature A W 1 device 50Hz/60Hz sine wave It Junction temperature 20 Tc=TBD Tc=25 C A 105 Tc=25 C o Collector Power Dissipation A Tc=25oC o Collector current V 20 36 Tc=TBD V ±20 Tc=25 C Tc=TBD Units AC : 1min. (*2) Mounting Screw Torque M4 (*1) All terminals should be connected together when isolation test will be done. V 2500 V 1.3∼1.7 N.m (*2) Terminal T1 and T2 should be connected together. And another terminals should be connected together and shorted to copper base. MT6M04460 2 4 H04-004-03 4. Electrical characteristics ( at Tj= 25oC unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter Inverter saturation voltage Input capacitance Turn-on time Symbols Characteristics min. typ. Max. Conditions ICES VGE = 0 V, VCE = 600 V - - 0.02 mA IGES VCE = 0 V, VGE = +-20 V - - 200 nA 5.0 6.0 7.0 V - 1.76 TBD V V GE(th) VCE = 20 V, Ic = V CE(sat) VGE = Ic = 15 V, chip Cies VGE = f= ton Vcc= tr 20 mA 20 A terminal - 1.81 TBD - 1550 - 300 V - TBD 1.2 20 A - TBD 0.6 0 V, VCE = 1 MHz Ic = 10 V VGE = ±15 V - TBD - RG = TBD Ω - TBD 1.0 - TBD 0.35 Forward on voltage VF - 1.49 TBD - 1.54 TBD - - 300 ns Reverse recovery time Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Brake µs tr(i) toff IF = 20 A chip terminal Input capacitance Turn-on time trr IF = 20 A V ICES VGE = 0 V, VCE = 600 V - - 0.02 mA IGES VCE = 0 V, VGE = +-20 V - - 200 nA 5.0 6.0 7.0 V V V GE(th) VCE = 20 V, Ic = V CE(sat) VGE = Ic = 15 V, chip - 2.36 TBD 20 A terminal - 2.41 TBD - 820 - 300 V - TBD 1.2 20 A - TBD 0.6 VGE = ±15 V - TBD 1.0 Cies VGE = f= ton Vcc= tr Converter pF Turn-off time tf Thermistor Units 0 V, VCE = 1 MHz Ic = 20 mA 10 V pF µs Turn-off time toff tf RG = TBD 0.35 trr IF = TBD Ω 20 A - Reverse recovery time - - 300 ns Reverse current IRRM VR = 600 V - - 0.02 mA Forward on voltage V FM IF = - 1.1 - V - 1.2 1.5 - - 1.0 mA - 5000 - Ω 465 495 520 3305 3375 3450 20 A chip terminal Reverse current Resistance IRRM R VR = 800 V T = 25oC o T =100 C B value B o T = 25/50 C K 5. Thermal resistance characteristics Items Symbols Thermal resistance (1 device) Contact Thermal resistance Rth(j-c) Rth(c-f) Conditions Characteristics min. typ. Max. Inverter IGBT - 1.07 TBD Inverter FWD - 1.80 TBD Brake IGBT - 1.42 TBD Brake diode - 2.50 TBD Converter Diode - 1.36 TBD with Thermal Compound (*) - 0.05 - Units o C/W o C/W * This is the value which is defined mounting on the additional cooling fin with thermal compound. MT6M04460 3 4 H04-004-03 6. Indication on module TBD 7. Applicable category This specification is applied to Power Integrated Module named 7MBR20UE060. 8. Storage and transportation notes ・ The module should be stored at a standard temperature of 5 to 35oC and humidity of 45 to 75% . ・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface. ・ Avoid exposure to corrosive gases and dust. ・ Avoid excessive external force on the module. ・ Store modules with unprocessed terminals. ・ Do not drop or otherwise shock the modules when transporting. ∼ ∼ 9. Definitions of switching time 90% 0V 0V V GE trr L Ir r Ic 90% 10% 10% ∼ ∼ 0V 0A V CE Ic 90% Vcc RG ∼ ∼ VCE 10% VCE tr ( i ) V GE Ic tr tf to f f ton MT6M04460 4 4 H04-004-03