ETC 2SK3608-01S

DATE
CHECKED Jan.-18-'02
CHECKED Jan.-18-'02
NAME
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
SPECIFICATION
Device Name
:
Power MOSFET
Type Name
:
2SK3608-01L,S,SJ
Spec. No.
:
MS5F5119
Date
:
Jan.-18-2002
Fuji Electric Co.,Ltd.
Matsumoto Factory
APPROVED
DRAWN Jan.-18-'02
Fuji Electric Co.,Ltd.
MS5F5119
1 / 22
H04-004-05
Date
Jan.-18
2002
Classification
Index
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
Revised Records
Content
Drawn Checked Checked Approved
enactment
MS5F5119
2 / 22
H04-004-03
1.Scope
This specifies Fuji Power MOSFET 2SK3608-01L,S,SJ
2.Construction
N-Channel enhancement mode power MOSFET
3.Applications
for Switching
4.Outview
T-pack
L-type Outview See to 8/22 page
S-type Outview See to 9/22 page
SJ-type Outview See to 10/22 page
5.Absolute Maximum Ratings at Tc=25°° C (unless otherwise specified)
Description
Symbol
Unit
VDS
200
V
VDSX
170
V
Remarks
VGS=-30V
Continuous Drain Current
ID
± 13
A
Pulsed Drain Current
IDP
± 52
A
Gate-Source Voltage
VGS
± 30
V
Non-repetitive Avalanche Current
Maximum Avalanche Energy
IAS
EAS
13
175
A
mJ
Maximum Drain-Source dV/dt
dVDS/dt
20
kV/µs
VDS<=200V
Peak Diode Recovery dV/dt
dV/dt
5
kV/µs
*1
Maximum Power Dissipation
PD
1.67
Tstg
Temperature range
*1 IF≤-ID,-di/dt=50A/µs,Vcc≤BVDSS,Tch≤150°C
L=1.65mH,Vcc=48V
Ta=25°C
Tc=25°C
150
°C
-55 to +150
°C
Tch
Operating and Storage
W
50
6.Electrical Characteristics at Tc=25°° C (unless otherwise specified)
Static Ratings
Description
Symbol
Conditions
min.
typ.
max.
Unit
200
-
-
V
3.0
-
5.0
V
-
-
25
ID=250µA
Drain-Source
Breakdown Voltage BVDSS
Gate Threshold
Voltage VGS(th)
Zero Gate Voltage
Drain Current IDSS
Gate-Source
Leakage Current IGSS
Drain-Source
On-State Resistance RDS(on)
VGS=0V
ID=250µA
VDS=VGS
VDS=200V
Tch=25°C
VGS=0V
VDS=160V
Tch=125°C
VGS=0V
µA
-
-
250
-
10
100
nA
-
131
170
mΩ
VGS= ± 30V
VDS=0V
ID=6.5A
VGS=10V
Fuji Electric Co.,Ltd.
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This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
Drain-Source Voltage
Characteristics
MS5F5119
3 / 22
H04-004-03
Dynamic Ratings
Description
Symbol
Conditions
min.
typ.
max.
Unit
VDS=25V
5.5
11
-
S
ID=6.5A
Forward
Transconductance gfs
Input Capacitance
Ciss
VDS=75V
-
770
1155
Output Capacitance
Coss
VGS=0V
-
110
165
5
7.5
Reverse Transfer
f=1MHz
Capacitance Crss
-
td(on)
Vcc=48V
-
12
18
tr
VGS=10V
-
2.6
3.9
td(off)
ID=6.5A
-
22
33
Turn-Off Time
tf
RGS=10Ω
-
6.1
9.2
Total Gate Charge
QG
Vcc=100V
-
21
31.5
Gate-Source Charge
QGS
ID=13A
-
8
12
Gate-Drain Charge
QGD
VGS=10V
-
5
7.5
min.
typ.
max.
Unit
13
-
-
A
-
1.10
1.65
V
-
0.15
-
µs
-
0.88
-
µC
min.
typ.
max.
Unit
Turn-On Time
ns
nC
Reverse Diode
Description
Symbol
Avalanche Capability
Conditions
L=100µH
IAV
Tch=25°C
See Fig.1 and Fig.2
IF=13A
Diode Forward
On-Voltage VSD
VGS=0V
Tch=25°C
IF=13A
Reverse Recovery
Time trr
Reverse Recovery
VGS=0V
-di/dt=100A/µ s
Charge Qrr
Tch=25°C
7.Thermal Resistance
Description
Symbol
Channel to Case
Rth(ch-c)
2.5
°C/W
Channel to Ambient
Rth(ch-a)
75.0
°C/W
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
pF
MS5F5119
4 / 22
H04-004-03
50Ω
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
Fig.1 Test circuit
L
D.U.T
L=100µH
Vcc=48V
Single Pulse Test
MS5F5119
Vcc
Fig.2 Operating waveforms
+10V
VGS
-15V
IDP
BVDSS
0
VDS
ID
5 / 22
H04-004-03
8.Reliability test items
All guaranteed values are under the categories of reliability per non-assembled(only MOSFETs).
Each categories under the guaranteed reliability conform to EIAJ ED4701 B101A standards.
Test items required without fail : Test Method B-121,B-122,B-123,B-131,B-141
Humidification treatment (85±2°C,65±5%RH,168±24hr)
Heat treatment of soldering (IR-ray Reflow ,235±5°C(240°Cmax.),10±1sec,2 times)
Test
Items
Testing methods and Conditions
1 Vibration
frequency : 100Hz to 2kHz
2
Acceleration : 100m/s
Sweeping time : 20min./1 cycle
6times for each X,Y&Z directions.
2
Peak amplitude: 15km/s
Duration time : 0.5ms
3times for each X,Y&Z directions.
2 Shock
3 Solderability
4 Resistance to
Soldering Heat
Reference
Standard
EIAJ ED4701
A-122
test code D
Acceptance
number
15
15
(0:1)
A-131A
test code B
Solder temp. : 235±5°C
Immersion time : 10±1sec
IR-ray Reflowing
A-133A
test code 1-A
Fuji Electric Co.,Ltd.
Sampling
number
A-121
test code C
Solder temp. : 215±5°C
Immersion time : 10±0.5sec
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
Mechanical test methods
Test
No.
MS5F5119
15
15
6 / 22
H04-004-03
Test
Items
Testing methods and Conditions
1 High Temp.
Storage
2 Low Temp.
Storage
3 Temperature
Humidity
Storage
4 Temperature
Humidity
BIAS
Temperature : 150+0/-5°C
Test duration : 1000hr
Temperature : -55+5/-0°C
Test duration : 1000hr
Temperature : 85±2°C
Relative humidity : 85±5%
Test duration : 1000hr
Temperature : 85±2°C
Relative humidity : 85±5%
Bias Voltage : VDS(max) * 0.8
5 Unsaturated
Pressurized
Vapor
Test duration : 1000hr
Temperature : 130±2°C
Relative humidity : 85±5%
Vapor pressure : 230kPa
Test duration : 96hr
6 Temperature
Cycle
Test for FET
7 Thermal Shock
1 Intermittent
Operating
Life
2 HTRB
(Gate-source)
3 HTRB
(Drain-Source)
Reference
Standard
EIAJ ED4701
B-111A
Sampling
number
Acceptance
number
22
B-112A
22
B-121A
test code C
22
B-122A
test code C
22
(0:1)
High temp.side : 150±5°C
Low temp.side : -55±5°C
Duration time : HT 30min,LT 30min
Number of cycles : 100cycles
Fluid : pure water(running water)
High temp.side : 100+0/-5°C
Low temp.side : 0+5/-0°C
Duration time : HT 5min,LT 5min
Number of cycles : 100cycles
Ta=25±5°C
∆Tc=90degree
Tch≤Tch(max.)
Test duration : 3000 cycle
Temperature : 150+0/-5°C
Bias Voltage : VGS(max)
Test duration : 1000hr
Temperature : 150+0/-5°C
Bias Voltage : VDS(max)
Test duration : 1000hr
B-123A
test code C
22
B-131A
test code A
22
B-141A
test code A
22
D-322
22
D-323
22
D-323
22
(0:1)
Failure Criteria
Symbols
Failure Criteria
Lower Limit
Upper Limit
Breakdown Voltage
BVDSS
Zero gate Voltage Drain-Source Current
Gate-Source Leakage Current
Gate Threshold Voltage
VGS(th)
Unit
LSL * 0.8
-----
V
IDSS
-----
USL * 2
A
IGSS
-----
USL * 2
A
LSL * 0.8
USL * 1.2
V
Drain-Source on-state Resistance
RDS(on)
Forward Transconductance
gfs
Diode forward on-Voltage
VSD
-----
USL * 1.2
Ω
LSL * 0.8
-----
S
-----
USL * 1.2
V
Marking
Soldering
-----
With eyes or Microscope
-----
and other damages
* LSL : Lower Specification Limit
* USL : Upper Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150°C.
Fuji Electric Co.,Ltd.
DWG.NO.
Electrical
Characteristics
Item
Outview
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
Climatic test methods
Test
No.
MS5F5119
7 / 22
H04-004-03
1
2
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
T-pack L-type
FUJI POWER MOS FET
See Note: 1.
Trademark
Lot No.
Type name
PRE-SOLDER
CONNECTION
3
1 GATE
2 DRAIN
3 SOURCE
Note: 1. Guaranteed mark of avalanche ruggedness.
DIMENSIONS ARE IN MILLIMETERS.
MS5F5119
8 / 22
H04-004-03
T-pack S-type
FUJI POWER MOS FET
OUT VIEW
See Note: 1.
4
Trademark
Fig. 1.
Lot No.
Fig. 1.
CONNECTION
Solder Plating
1
4 2
3
GATE
DRAIN
SOURCE
Pre-Solder
Notes
Note: 1. Guaranteed mark of
avalanche ruggedness.
1. ( ) : Reference dimensions.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
DIMENSIONS ARE IN MILLIMETERS.
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
Type name
MS5F5119
9 / 22
H04-004-03
T-pack SJ-type
FUJI POWER MOS FET
OUT VIEW
See Note: 1.
Trademark
Fig. 1.
Lot No.
Fig. 1.
CONNECTION
4
1
GATE
2
DRAIN
3
SOURCE
Solder Plating
Pre-Solder
Notes
1. ( ) : Reference dimensions.
Note: 1. Guaranteed mark of
avalanche ruggedness.
Fuji Electric Co.,Ltd.
2. The metal part is covered with
the solder plating, part of cutting
is without the solder plating.
DIMENSIONS ARE IN MILLIMETERS.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
Type name
MS5F5119
10 / 22
H04-004-03
9 Warning
9.1. Although Fuji Electric is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty. When using Fuji Electric semiconductor products in your equipment, you
are requested to take adequate safety measures to prevent the equipment from causing a physical
injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design fail-safe, flame retardant, and free of malfunction.
9.2. The products introduced in this Specification are intended for use in the following electronic and
electrical equipment witch has normal reliability requirements.
• Computers OA equipments
• Measurement equipments
• Electrical home appliances
• Communications equipment (Terminal devices)
• Machine tools
• AV equipments
• Personal equipments
• Industrial robots
etc…
• Transportation equipment (Automotives, Locomotives and ships etc…)
• Backbone network equipment
• Traffic-signal control equipment
• Gas alarm, Leakage gas auto breaker
• Burglar alarm, Fire alarm, Emergency equipments etc…
9.4. Don’t use products in this Specification for the equipment requiring strict reliability such as
(without limitation)
• Aerospace equipment
• Aeronautic equipment
• nuclear control equipment
• Medical equipment
• Submarine repeater equipment
10. General Notice
10.1. Preventing ESD Damage
Although the gate oxide of Fuji Power MOSFETs is much higher ruggedness to ESD damage than
small-Signal MOSFETs and CMOS ICs, careful handling of any MOS devices are an important
consideration.
1) When handling MOSFETs, hold them by the case (package) and don’t touch the leads and
terminals.
2) It is recommended that any handling of MOSFETs is done while used electrically conductive floor and
tablemats that are grounded.
3) Before touching a MOSFETs terminal, discharge any static electricity from your body and clothes by
grounding out through a high impedance resistor (about 1MΩ)
4) When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron or
soldering bath through a low impedance resistor.
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
9.3. If you need to use a product in this Specification for equipment requiring higher reliability than normal,
such as for the equipment listed below, it is imperative to contact Fuji Electric to obtain prior approval.
When using these products for such equipment, take adequate measures such as a backup system to
prevent the equipment from malfunctioning even if a Fuji’s product incorporated in the equipment
becomes faulty.
MS5F5119
11 / 22
H04-004-03
10.2. Short mode failure / Open mode failure
The MOSFETs may be in the risk of having short mode failure or open mode failure when the applied over
voltage, over current or over temperature each specified maximum rating. It is recommended to use the
fail-safe equipment or circuit from such possible failures.
10.3. An Electric shock / A Skin burn
You may be in risk for an Electric shock or a Skin burn for directly touching to the leads or package of the
MOSFETs while turning on electricity or operating.
10.4. Smoke / Fire
Fuji MOSFETs are made of incombustibility material. However, a failure of the MOSFETs may emit
smoke or fire. Also, operating the MOSFETs near any flammable place or material may risk the
MOSFETs to emit smoke or fire due to the MOSFETs reach high temperature while operated.
10.6. Radiation field
Don’t use of the device under the radiation field since the device is not designed for radiation proofing.
11. Notes for Design
11.1. You must design the MOSFETs to be operated within specified maximum ratings (Voltage, Current,
Temperature etc…) which are imperative to prevent possible failure or destruction of the device.
11.2. We recommend to use the protection equipment or safety equipment such as fuse, breaker to prevent
the fire or damage in case of unexpected accident may have occurred.
11.3. You must design the MOSFETs within it’s reliability and lifetime in certain the environment or condition.
There is a risk that MOSFETs breakdown earlier than the target lifetime of the your products when
MOSFETs was used in the reliability condition excessively. Especially avoid use of the MOSFETs
under the higher humidity, corrosive gases.
11.4. We recommend to consider for the temperature rise not only for the Channel but also for the Leads if it
designed to large current operation to the MOSFETs.
11.5. We only guarantee the non-repetitive and repetitive Avalanche capability and not for the continuous
Avalanche capability which can be assumed as abnormal condition. Please note the device may be
destructed from the Avalanche over the specified maximum rating.
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
10.5. Corrosion / Erosion
Avoid use or storage of the MOSFETs under the higher humidity, corrosive gases. It will lead the device
to corrode and possibly cause the device to fail.
MS5F5119
12 / 22
H04-004-03
12. Note on implementation
12.1. Soldering
Soldering involves temperatures witch exceed the device storage temperature rating. To avoid device
damage and to ensure reliability, the following guidelines from the quality assurance standard must be
observed.
1) Solder temperature and duration (Through-Hole Package)
Solder temperature
Duration
260±5 °C
10±1 seconds
350±10 °C
3.5±0.5 seconds
2) The device should not be soldered closer than 1mm from the package. (* through-hole package)
3) When flow soldered, care must be taken to Avoid immersing the package in the solder-bath.
Table 1 : Recommended tightening torques.
Package style
TO-220
TO-220F
TO-3P
TO-3PF
TO-247
TO-3PL
Screw
Recommended tightening
torques
M3
30 – 50 Ncm
M3
40 – 60 Ncm
M3
60 –80 Ncm
12.3. If the heat sink with coarse finish is used, increase in thermal resistance and concentrated force to a
point may cause the MOSFETs to be destructed. We recommend in such condition to process the
surface of heat sink within ±50µm and use of thermal compound to optimize its efficiency of heat
radiation. Moreover, it is important to evenly apply the compound and eliminate any air voids. A simple
method is to apply a dot of compound of the appropriate quantity to the center of the case just below
the chip mount.
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
12.2. Please see to the following the Torque reference when mounting the device to heat sink. Excess
torque applied to the mounting screw causes damage to the device and weak torque will increase the
thermal resistance. Both of these conditions may lead the device to be destructed.
MS5F5119
13 / 22
H04-004-03
13.Notes for Storage
13.1. The MOSFETs should be stored at a standard temperature of 5 to 35 °C and humidity of 45 to
75%RH. If the storage area is very dry, a humidifier may be required. In such a case, use only
deionized water or boiled water, since the chlorine in tap water may corrode the leads.
13.2. Avoid exposure to corrosive gases and dust.
13.3. Rapid temperature changes may cause condensation on the MOSFETs surface. Therefore, store
the MOSFETs in a place with few temperature changes.
13.4. While in storage, it is important that nothing be loaded on top of the MOSFETs, since this may
cause excessive external force on the case.
13.5. Store MOSFETs with unprocessed lead terminals. Rust may cause presoldered connections to go
bad during later processing.
14. Additional points
If you have any question about any portion in this Specification, ask Fuji Electric or its sales agents before
using the product. Neither Fuji nor its agents shall be liable for any injury caused bay any use of the
products not in accordance with instructions set forth herein.
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
13.6. Use only antistatic containers or shipping bag for storing MOSFETs.
MS5F5119
14 / 22
H04-004-03
0
0
25
2
50
4
Fuji Electric Co.,Ltd.
DWG.NO.
ID [A]
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
PD [W]
70
Allowable Power Dissipation
PD=f(Tc)
60
50
40
30
20
10
0
75
100
35
10
5
6
VDS [V]
8
125
30
7.5V
25
7.0V
10
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25°C
40
20V
10V
8V
20
6.5V
15
6.0V
VGS=5.5V
0
12
MS5F5119
15 / 22
H04-004-03
0
0.1
1
2
3
4
Fuji Electric Co.,Ltd.
5
VGS[V]
DWG.NO.
gfs [S]
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
ID[A]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1
6
1
7
10
8
9
10
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1
100
ID [A]
MS5F5119
16 / 22
H04-004-03
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
0.40
VGS=
5.5V
0.35
6.0V
6.5V
7.0V
7.5V
0.30
8V
RDS(on) [ Ω ]
10V
0.25
20V
0.20
0.15
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
0.10
0.05
0.00
0
5
10
15
20
25
30
35
40
125
150
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6.5A,VGS=10V
500
450
400
RDS(on) [ m Ω ]
350
300
250
max.
200
150
typ.
100
50
0
-25
0
Fuji Electric Co.,Ltd.
25
50
Tch [°C]
DWG.NO.
-50
75
100
MS5F5119
17 / 22
H04-004-03
VGS(th) [V]
5.0
3.0
-50
0
-25
0
10
Fuji Electric Co.,Ltd.
25
DWG.NO.
VGS [V]
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
7.0
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
6.5
6.0
5.5
max.
4.5
4.0
3.5
min.
2.5
2.0
1.5
1.0
0.5
0.0
50
75
Tch [°C]
20
100
30
125
150
Typical Gate Charge Characteristics
VGS=f(Qg):ID=16A,Tch=25°C
14
12
10
8
Vcc= 100V
6
4
2
0
40
Qg [nC]
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10
-1
0.1
0.00
0.25
0.50
0.75
Fuji Electric Co.,Ltd.
1.00
DWG.NO.
IF [A]
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
C [nF]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10
0
Ciss
10
-1
Coss
10
-2
Crss
10
-3
10
0
10
1
10
2
VDS [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
100
10
1
1.25
1.50
1.75
2.00
VSD [V]
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t [ns]
10
2
10
-1
0
25
50
Fuji Electric Co.,Ltd.
DWG.NO.
IAV [A]
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10 Ω
10
3
tf
td(off)
td(on)
10
1
tr
10
0
10
0
10
1
75
100
10
2
ID [A]
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch):Vcc=48V
30
25
20
15
10
5
0
125
150
starting Tch [°C]
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0
10
2
10
-8
25
10
10
-7
50
10
-6
Fuji Electric Co.,Ltd.
DWG.NO.
Avalanche Current I AV [A]
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
EAV [mJ]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=13A
300
250
200
150
100
50
0
75
100
10
-5
125
10
-4
150
starting Tch [°C]
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=48V
1
Single Pulse
10
0
10
-1
10
-2
10
-3
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10
-2
tAV [sec]
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H04-004-03
10
-6
10
-5
10
-4
Fuji Electric Co.,Ltd.
DWG.NO.
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
Zth(ch-c) [°C/W]
Transient Thermal Impedance
Zth(ch-c)=f(t):Duty=0
10
1
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
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10
0
t [sec]
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